Thermoelectric power in the system (GeTe)1−x(AgSbTe2)x

Plachkova, S. K.

doi:10.1002/pssa.2210800168

Cited by 7 publications

(6 citation statements)

References 3 publications

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“…This shows the predominant role of the interband scattering mechanisms at low temperatures in the (GeTe), -x(AgBiTe,)x system as in Gel -yTey [37] and in (GeTe), -,. (AgSbTe,), systems [39]. The temperature dependence of S, at T > 77 K is analogous to the results for Ge,-,Te, 1371 and for some GeTe-MnTe alloys [38], but we have not observed maxima of S, at T = 1/5 8, to 1/7 8 , probably because such temperatures (% 40 to x 28 K) are not reached in our measurements.…”

Section: Resultssupporting

confidence: 87%

“…In the case of GeTe [37] and GeTe-rich SS in the systems GeTe-MnTe [38] and GeTe-AgSbTe, [39] the temperature dependence of S was successfully explained accepting that the thermoelectric power is a sum of a diffusion and a phonon-drag contributions, s = S, + SI (28) and using the metallic expressions for S , and S,. The diffusion term S , arises from the diffusion of the carriers (the holes in a single-valent T band) according to the band-edge structure of GeTe and GeTe-rich SS in the rhombohedra1 (C2J phase (see Fig.…”

Section: Resultsmentioning

confidence: 99%

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Thermoelectric Power of Some Compositions of GeTe-Rich (GeTe)1—x(AgBiTe2)2 Solid Solution

Plachkova

Georgiev

1993

Phys. Stat. Sol. (a)

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A method of preparation of single phase ingots of GeTe-rich solid solutions (x s 0.20) in the system (GeTe), _JAgBiTe,), is developed. The temperature dependence (77 to z 900 K) of thermoelectric power is measured. The curves for GeTe and GeTe-rich solid solutions are of similar shape. Using the conventional transport theory the lattice and electronic contributions to this effect are obtained. To explain the behavior of diffusion and phonon drag terms the metallic expressions for both are used. On the basis of band-edge models of GeTe and AgBiTe, and the nonparabolic two-band Kane model of IV-VI compounds and separate values of the electronic parts of the thermoelectric power an information about the Fermi energy and the degree of degeneracy is received. A qualitative interpretation of the temperature dependence of S , is made.

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Section: Resultssupporting

confidence: 87%

Section: Resultsmentioning

confidence: 99%

Thermoelectric Power of Some Compositions of GeTe-Rich (GeTe)1—x(AgBiTe2)2 Solid Solution

Plachkova

Georgiev

1993

Phys. Stat. Sol. (a)

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“…The underlying origin of this phenomenon, however, is ambiguous, to our best knowledge. The lack of a detailed investigation of GeTe has also hindered the understanding of some GeTe-based alloys with decent TE properties, such as GeTe-AgSbTe (TAGS), [42][43][44][45] (GeTe) n Sb 2 Te 3 (GST), [46][47][48] (Bi 2 Te 3 ) x (GeTe) 1 − x 49-52 and Ge 1 − x Pb x Te. [53][54][55][56][57][58] Therefore, it is of great importance to reveal the essence of the superior electronic performance in GeTe, particularly from the perspective of the electronic structure.…”

Section: Introductionmentioning

confidence: 99%

Electronic origin of the high thermoelectric performance of GeTe among the p-type group IV monotellurides

et al. 2017

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PbTe and SnTe in their p-type forms have long been considered high-performance thermoelectrics, and both of them largely rely on two valence bands (the first band at L point and the second one along the Σ line) participating in the transport properties. This work focuses on the thermoelectric transport properties inherent to p-type GeTe, a member of the group IV monotellurides that is relatively less studied. Approximately 50 GeTe samples have been synthesized with different carrier concentrations spanning from 1 to 20 × 10 20 cm − 3 , enabling an insightful understanding of the electronic transport and a full carrier concentration optimization for the thermoelectric performance. When all of these three monotellurides (PbTe, SnTe and GeTe) are fully optimized in their p-type forms, GeTe shows the highest thermoelectric figure of merit (zT up to 1.8). This is due to its superior electronic performance, originating from the highly degenerated Σ band at the band edge in the low-temperature rhombohedral phase and the smallest effective masses for both the L and Σ bands in the high-temperature cubic phase. The high thermoelectric performance of GeTe that is induced by its unique electronic structure not only provides a reference substance for understanding existing research on GeTe but also opens new possibilities for the further improvement of the thermoelectric performance of this material.

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“…A rapid increase of the absolute value of S, is observed which is connected with the rapid decrease of carrier concentration upon increasing x [3]. Such an increase is observed in Gel-, Te, [ 7 ] , GeTe-MnTe [8], and QeTe-AgSbTe, [9] alloys. The calculations show that the increase is a result of a simultaneous variation of p , T~~, and z, , (increase of zpe/zp in the second term of (4) for C, constant).…”

Section: Experimental Procedure Results and Discussionmentioning

confidence: 99%

Thermoelectric power of GeTe-rich (GeTe)1–x(AgBiTe2)x solid solutions

Plachkova¹

1985

phys. stat. sol. (a)

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A method of preparation of single phase ingots of GeTe‐rich solid solutions (x≦0.20) in the system (GeTe)1–x(AgBiTe2)x is developed. The temperature dependences (77 to 900 K) of thermoelectric power are measured. The curves for GeTe and GeTe‐rich solid solutions are of similar shape. Using conventional transport theory the lattice and electronic contributions to this effect are obtained. To explain the behaviour of the diffusion‐ and phonon‐drag therms the metallic expressions of both are used.

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Thermoelectric power in the system (GeTe)1−x(AgSbTe2)x

Cited by 7 publications

References 3 publications

Thermoelectric Power of Some Compositions of GeTe-Rich (GeTe)1—x(AgBiTe2)2 Solid Solution

Thermoelectric Power of Some Compositions of GeTe-Rich (GeTe)1—x(AgBiTe2)2 Solid Solution

Electronic origin of the high thermoelectric performance of GeTe among the p-type group IV monotellurides

Thermoelectric power of GeTe-rich (GeTe)1–x(AgBiTe2)x solid solutions

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