Thermoelectric power in bismuth thin films

Mikołajczak, P.; Piasek, W.; Subotowicz, M.

doi:10.1002/pssa.2210250231

Cited by 28 publications

(7 citation statements)

References 12 publications

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“…This behavior can indeed be verified by an abundant amount of experimental data present in the literature. For example, this is reported for sputtered Ni 90 Cr 10 [31], for evaporated Cu [4,18,32,33], Ag [18,34,35], Au [35], Al [36], Fe [3], Sn [21], Sb [37], Bi films [37][38][39], or electron-beam evaporated Ni [40].…”

Section: Role Of Layer Thicknessmentioning

confidence: 97%

The Seebeck Coefficient of Sputter Deposited Metallic Thin Films: The Role of Process Conditions

Cougnon

Depla

2019

Coatings

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Because of their reduced dimensions and mass, thin film thermocouples are a promising candidate for embedded sensors in composite materials, especially for application in lightweight and smart structures. The sensitivity of the thin film thermocouple depends however on the process conditions during deposition. In this work, the influence of the discharge current and residual gas impurities on the Seebeck coefficient is experimentally investigated for sputter deposited copper and constantan thin films. The influence of the layer thickness on the film Seebeck coefficient is also discussed. Our observations indicate that both a decreasing discharge current or an increasing background pressure results in a growing deviation of the film Seebeck coefficient compared to its bulk value. Variations in discharge current or background pressure are linked as they both induce a variation in the ratio between the impurity flux to metal flux towards the growing film. This latter parameter is considered a quantitative measure for the background residual gas incorporation in the film and is known to act as a grain refiner. The observed results emphasize the importance of the domain size on the Seebeck coefficient of metallic thin films.

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Section: Role Of Layer Thicknessmentioning

confidence: 97%

The Seebeck Coefficient of Sputter Deposited Metallic Thin Films: The Role of Process Conditions

Cougnon

Depla

2019

Coatings

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“…Figures 7a and b show the experimental results corresponding to process no l, 2 and 3 for the thickness dependence of the conductivity ratio UFlao at 300 K and 77 K. The comparison between theory and experiments has been carried out with values of 10 ranging from 1 000 A to 3 500 A for experiments at 300 K [28] and from 35 000 A to 50 000 A for experiments at 77 K [18].…”

mentioning

confidence: 99%

Structural study of bismuth films and its consequences on their electrical properties

Buxo

Saleh

Sarrabayrouse

et al. 1980

Rev. Phys. Appl. (Paris)

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2014 Les auteurs étudient les propriétés structurales des couches minces de bismuth à 1'aide des techniques suivantes : diffraction des électrons par réftexion, diffraction des rayons X, microscopie électronique par balayage et diffraction et microscopie électronique par transmission. Ils rappellent les propriétés électriques des couches minces de bismuth (mesures de conductivité et du facteur RH). Il apparait que les états de surface jouent un rôle déterminant dans les définitions des propriétés du facteur RH et de la conductivité. Cette conclusion est étayée par les résultats de 1'etude structurale. Une propriété importante du mécanisme de conduction telle que le libre parcours moyen des porteurs a été estimée et sa valeur est aussi en accord avec les résultats de l'étude structurale.La densité des états de surface ainsi que la hauteur de barrière associée aux joints de grain ont été évaluées en fonction des différentes techniques de preparation. Abstract. 2014 The structure of bismuth thin films prepared according to three different deposition techniques is inspected by : reflection electron diffraction, X-ray diffraction, scanning electron microscopy, transmission microscopy and electron diffraction. The electrical conduction properties, RH and conductance measurements, of these films are then discussed. It appears that surface states play a major role in dictating the properties of both RH and conductivity. This is clearly confirmed with the aid of the conclusions of the structural study. By comparing size effect theories with the conductivity data the carrier mean free path can be estimated to be of the order of 1 000 Å in good agreement with the observation of the film structure. The surface state density and the energy barrier that controls the carrier transport across the grain boundaries have also been evaluated as a function of the preparation technique.

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“…The proposed thickness-engineered design of a single metal thermocouple (SMT) based on different thickness metal layers is schematically displayed in figure 1(b). Bi metal has been chosen for the purpose due to its more prominent thermoelectric changes with respect to the changes in the material dimension and also it is one of the metals to display substantial thermoelectric effects, as compared to any other metal [11,12]. The changes in the thermoelectric effects have been confirmed by measuring the Seebeck coefficient (S) of the individual Bi films of different thickness, the data is shown in figure 2(a).…”

Section: Resultsmentioning

confidence: 99%

Enhanced thermal sensitivity in single metal thermocouple: significance of thickness-engineering of the metal layers

Mulla¹,

Dunnill²

2021

Eng. Res. Express

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Single metal thermocouples (SMTs) have recently been developed with a new design concept of width-engineering of metal segments. In such designs, two segments of different micro-width are formed to obtain different levels of Seebeck effects. The variations in the Seebeck effect achieved from dissimilar segment width are small. In addition, the fabrication of such micro-width patterns requires special fabrication facilities such as photolithography or electron-beam lithography. In this paper, an alternative method is presented that has the potential to give high thermal sensing SMTs and requires no sophisticated facilities to fabricate. The method is based on thickness-engineering instead of widthengineering, and thus devices can be obtained from commonly available thin film deposition techniques. Constructing better thermal sensing SMTs is possible with this approach as thickness can be easily and conveniently varied down to nanoscale range which is necessary to achieve significant changes in the Seebeck effects from effectively utilizing size effects. As a result, a high thermal sensing bismuth based-SMT has been fabricated with a sensitivity of as high as 31 μV K −1 , one of the highest values reported for SMTs. It is straightforward, more convenient over width-engineering approach and thus SMTs can be easily developed.

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Thermoelectric power in bismuth thin films

Cited by 28 publications

References 12 publications

The Seebeck Coefficient of Sputter Deposited Metallic Thin Films: The Role of Process Conditions

The Seebeck Coefficient of Sputter Deposited Metallic Thin Films: The Role of Process Conditions

Structural study of bismuth films and its consequences on their electrical properties

Enhanced thermal sensitivity in single metal thermocouple: significance of thickness-engineering of the metal layers

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