Thermoelectric Performance of Single-Phase Tellurium-Reduced Quaternary (PbTe)_0.55(PbS)_0.1(PbSe)_0.35

Abstract

Lead chalcogenide quaternary systems have been shown to provide high thermoelectric (TE) efficiency superior to those of binary and ternary lead chalcogenides, arising from both altered electronic band structures and a reduction in lattice thermal conductivity. Here, we have synthesized single-phase samples of the quaternary compound (PbTe) 0.55 (PbS) 0.1 (PbSe) 0.35 doped with Na and characterized their TE properties. We show that the dopant solubility is limited to 1 at. %. A very low lattice thermal conductivity of ∼0.6 W m –1 K –1 at 850 K is achieved at all dopant concentrations because of phonon scattering from point defects associated with solute atoms with high contrast atomic mass. As a result, a high TE figure of merit of approximately 1.5 is achieved at 823 K in heavily doped samples. Moreover, the figure of merit is greater than 1 over a wide temperature range above 675 K.

Investigating the Electrical Transport and Photoresponse Properties of WSe2 and a Thermally Engineered SrTiO3-Based Heterojunction

“…A change in resistivity on the order of 10 8 has been observed. The resistivity versus temperature measurements, as depicted in Figure c, confirm the characteristics typically associated with highly doped or degenerate semiconductors. − …”

Hydrostatic Pressure Tuning of Thermal Conductivity for PbTe and PbSe Considering Pressure-Induced Phase Transitions

“…Thermoelectric materials can directly convert heat into electricity, which has attracted increasing attention. − Lead chalcogenides, such as PbTe and PbSe, are typical IV–VI narrow band gap semiconductors with outstanding thermoelectric performance. , The capability of the thermoelectric conversion is evaluated by the dimensionless figure of merit ZT = S 2 σ T /( k l + k e ), where S , σ, T , k l , and k e are Seebeck coefficient, electrical conductivity, absolute temperature, lattice thermal conductivity, and electronic thermal conductivity, respectively . In general, phonons are the dominant heat carriers in semiconductors and insulators, and the lattice thermal conductivity is much greater than the electronic thermal conductivity .…”

Thermoelectric Transport Characteristics of n-type (PbTe)1-x-y(PbS)x(Sb2Se3)y Systems via Stepwise Addition of Dual Components

“…PbTe，而迁移率 的变化关系则较复杂，这两个参 数会影响样品的电传输性 [23] ，后文将进行阐释。 [3] 。它的电 学性能曲线并不随着温度单调变化， 而是在 400~600 K 温度范围出现反向变化， 这与该温度区间纳米 PbS 团簇形核析出而改变电子传输特性有关 [29] [32] ，L 为洛伦兹常数。假 设该体系中载流子散射机制基本为声学声子散射， 基于常用的单抛物线能带(SPB)模型 [24,[33][34] [20] 及 PbTeSe-Na-SrTe [14] 体系相当。 最终，AB5Cn 样品组的 ZT 大幅度超越 PbTe，在 500~800 K 温度区间尤为显著(图 5(f))。其中，AB5C1 的热电性能最佳，其 ZT 均值达到 1.09，在 700 K 时 ZT 最大值高达 1.7，优于文献报道的其它 n 型 PbTe 基 热电 材料 ，如 (Pb0.91Sn0.09)(Te0.91Se0.09)(~1.4) [12] 、 (PbS)0.53(PbSe)0.25(PbTe)0.2Sb0.02(~1.0) [37] 、 PbTe+2%AgSbTe2(~1.3) [38] 。…”