Thermoelectric Performance of Se/Cd Codoped SnTe via Microwave Solvothermal Method

Wang, Lijun; Chang, Siyi; Zheng, Shuqi; Fang, Teng; Cui, Wenlin; Bai, Pengpeng; Luo, Yi; Chen, Huajun

doi:10.1021/acsami.7b06083

Cited by 53 publications

(44 citation statements)

References 51 publications

(105 reference statements)

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“…In GeTe, there are multiple VB edges and decreasing ΔE between the multiple VB edges can intensify the contributions from the extra VB to enhance the overall thermoelectric performance. Similar to Cd-doped SnTe with band convergence, [75,155,156] it has been reported that Cd doping can decrease ΔE of VBs in GeTe. [92] Figure 8a,b show the calculated band structures of pristine (green curves) and Cddoped (red curves) GeTe with R-and C-phases, respectively.…”

Section: Sub-valence-band Alignmentmentioning

confidence: 81%

Thermoelectric GeTe with Diverse Degrees of Freedom Having Secured Superhigh Performance

2019

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Driven by the ability to harvest waste heat into reusable electricity and the exclusive role of serving as the power generator for deep spacecraft, intensive endeavors are dedicated to enhancing the thermoelectric performance of ecofriendly materials. Herein, the most recent progress in superhigh‐performance GeTe‐based thermoelectric materials is reviewed with a focus on the crystal structures, phase transitions, resonant bondings, multiple valance bands, and phonon dispersions. These features diversify the degrees of freedom to tune the transport properties of electrons and phonons for GeTe. On the basis of the optimized carrier concentration, strategies of alignment of multiple valence bands and density‐of‐state resonant distortion are employed to further enhance the thermoelectric performance of GeTe‐based materials. To decrease the thermal conductivity, methods of strengthening intrinsic phonon–phonon interactions and introducing various lattice imperfections as scattering centers are highlighted. An overview of thermoelectric devices assembled from GeTe‐based thermoelectric materials is then presented. In conclusion, possible future directions for developing GeTe in thermoelectric applications are proposed. The achieved high thermoelectric performance in GeTe‐based thermoelectric materials with rationally established strategies can act as a reference for broader materials to tailor their thermoelectric performance.

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Section: Sub-valence-band Alignmentmentioning

confidence: 81%

Thermoelectric GeTe with Diverse Degrees of Freedom Having Secured Superhigh Performance

2019

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“…[36,55,56,60,61,[81][82][83] In recent years, it has developped nontoxic, low-cost thermoelectric materials as substitutes for current high-cost and high zT thermoelectric materials to draw real industrial attentions. Inspired by this, many promising earth-abundant and less-toxic or nontoxic thermoelectric materials have been explored, including lead-free SnTe, [5,[84][85][86] Cu 2 Se, [87,88] Cu 12 Sb 4 S 13 , [89] Cu 2 ZnGeSe 4 , [90] Cu 2 CdSnSe 4 , [91] especially silicides, [45,92] including Mg 2 Si [46] and higher manganese silicide (HMS), [63,64,93] composed earth abundant and eco-friendly Mn and Si.…”

Section: Introductionmentioning

confidence: 99%

Eco‐Friendly Higher Manganese Silicide Thermoelectric Materials: Progress and Future Challenges

Liu

Chen

Zou

2018

Advanced Energy Materials

121

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As a promising thermoelectric material, higher manganese silicides are composed of earth-abundant and eco-friendly elements, and have attracted extensive attention for future commercialization. In this review, the authors firstly summarise the crystal structure, band structure, synthesis method and pristine thermoelectric performance of different higher manganese silicides. After that, the strategies for enhancing electrical performance and reducing lattice thermal conductivity of higher manganese silicides as well as their synergistion are highlighted. The application potentials including the chemical and mechanical stability of higher manganese silicides and their energy conversion efficiency of the assembled thermoelectric modules are also summarised. By analysising the current advances in higher manganese silicides, this review proposes that potential methods of further enhancing zT of higher manganese silicide lie in enhancing electrical performance with simultaneously reducing lattice thermal conductivity via effectively reducing effective mass, optimizing carrier concentration, and nanostrcutre engineering.

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“…However, it is hard to state that PNJs are definitely disadvantageous for TE performance if the distribution and density can be reasonably controlled. Referring to alloys with a high n , especially pure Sb 2 Te 3 , SnTe, − and GeTe, , PNJs are expected to adjust their n to an optimal range . Moreover, carrier transports through PNJs are forbidden by the built-in electric field, that is, PNJs have a strong energy filtering effect for carriers, which is conducive to promote S . ,, Additionally, it should be noteworthy that the enhanced scattering of phonons by PNJs (heterojunctions) can lead to a decreased lattice thermal conductivity (κ lat ) .…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric Performance of Sb₂Te₃-Based Alloys is Improved by Introducing PN Junctions

Wang

Xiang³

et al. 2018

ACS Appl. Mater. Interfaces

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Interface engineering has been demonstrated to be an effective strategy for enhancing the thermoelectric (TE) performance of materials. However, a very typical interface in semiconductors, that is, the PN junction (PNJ), is scarcely adopted by the thermoelectrical community because of the coexistence of holes and electrons. Interestingly, our explorative results provide a definitively positive case that appropriate PNJs are able to enhance the TE performance of p-type SbTe-based alloys. Specifically, owing to the formation of the charge-depletion layer and built-in electric field, the carrier concentration and transport can be optimized and thus the power factor is improved and the electronic thermal conductivity is decreased. Meanwhile, PNJs provide scattering centers for phonons, leading to a reduced lattice thermal conductivity. Consequently, the p-type (BiTe)-(SbTe) composites comprising PNJs achieve a ∼131% improvement of the ZT value compared with the pure SbTe. The increased ZT demonstrates the feasibility of improving the TE properties by introducing PNJs, which will open a new and effective avenue for designing TE alloys with high performance.

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Thermoelectric Performance of Se/Cd Codoped SnTe via Microwave Solvothermal Method

Cited by 53 publications

References 51 publications

Thermoelectric GeTe with Diverse Degrees of Freedom Having Secured Superhigh Performance

Thermoelectric GeTe with Diverse Degrees of Freedom Having Secured Superhigh Performance

Eco‐Friendly Higher Manganese Silicide Thermoelectric Materials: Progress and Future Challenges

Thermoelectric Performance of Sb₂Te₃-Based Alloys is Improved by Introducing PN Junctions

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Thermoelectric Performance of Se/Cd Codoped SnTe via Microwave Solvothermal Method

Cited by 53 publications

References 51 publications

Thermoelectric GeTe with Diverse Degrees of Freedom Having Secured Superhigh Performance

Thermoelectric GeTe with Diverse Degrees of Freedom Having Secured Superhigh Performance

Eco‐Friendly Higher Manganese Silicide Thermoelectric Materials: Progress and Future Challenges

Thermoelectric Performance of Sb2Te3-Based Alloys is Improved by Introducing PN Junctions

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Thermoelectric Performance of Sb₂Te₃-Based Alloys is Improved by Introducing PN Junctions