Thermoelectric Performance of Ge-Doped Mg2Si0.35Sn0.65 Thin Films

Safavi, Mahsasadat; Martin, Nicolas; Aubry, Eric; Linseis, Vincent; Billard, Alain; Yazdi, Mohammad Arab Pour

doi:10.1007/s11665-021-05839-5

Cited by 4 publications

(3 citation statements)

References 39 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The mobility factor is not influenced by scattering through neutral impurities with temperature [233]. The surface oxidation of thin films could also induce drastic changes in thermopower.…”

Section: Dimensionality Effectmentioning

confidence: 99%

Physics and technology of thermoelectric materials and devices

Dadhich

Saminathan

Kumari

et al. 2023

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

The continuous depletion of fossil fuels and the increasing demand for eco-friendly and sustainable energy sources have prompted researchers to look for alternative energy sources. The loss of thermal energy in heat engines (100-350 ºC), coal-based thermal plants (150-700 ºC), heated water pumping in the geothermal process (150-700 ºC), and burning of petrol in the automobiles (150-250 ºC) in form of untapped waste-heat can be directly and/or reversibly converted into usable electricity by means of charge carriers (electrons or holes) as moving fluids using thermoelectric (TE) technology, which works based on typical Seebeck effect. The enhancement in TE conversion efficiency has been a key challenge because of the coupled relation between thermal and electrical transport of charge carriers in a given material. In this review, we have deliberated the physical concepts governing the materials to device performance as well as key challenges for enhancing the TE performance. Moreover, the role of crystal structure in the form of chemical bonding, crystal symmetry, order-disorder and phase transition on charge carrier transport in the material has been explored. Further, this review has also emphasized some insights on various approaches employed recently to improve the TE performance, such as, (i). carrier engineering via band engineering, low dimensional effects, and energy filtering effects and (ii). Phonon engineering via doping/alloying, nano-structuring, embedding secondary phases in the matrix and microstructural engineering. Wehave also briefed the importance of magnetic elements on thermoelectric properties of the selected materials and spin Seebeck effect. Furthermore, the design and fabrication of TE modules and their major challenges are also discussed. As, thermoelectric figure of merit, zT does not have any theoretical limitation, an ideal high performance thermoelectric device should consist of low-cost, eco-friendly, efficient, n- or p-type materials that operate at wide- temperature range and similar coefficients of thermal expansion, suitable contact materials, less electrical/ thermal losses and constant source of thermal energy. Overall, this review provides the recent physical concepts adopted and fabrication procedures of TE materials and device so as to improve the fundamental understanding and to develop a promising TE device.

show abstract

Section: Dimensionality Effectmentioning

confidence: 99%

Physics and technology of thermoelectric materials and devices

Dadhich

Saminathan

Kumari

et al. 2023

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…[66] Silicides have also received a lot of attention, with promising findings in N-type Mg 2 Si. [67,68] Other material families have lately been investigated and evaluated (N-La 3 -xTe 4 [69,70] ).…”

Section: Advanced Materialsmentioning

confidence: 99%

Review on Thermoelectric Generators (TEG) and their applications: Progress, Challenges, and future prospects

Radouane¹

2022

Chinese Phys. B

View full text Add to dashboard Cite

Our community is currently dealing with issues such as rising electricity costs, pollution, and global warming. Scientists are working to improve energy harvesting-based power generators in order to reduce their impacts. The Seebeck effect has been used to illustrate the capacity of thermoelectric generators (TEGs) to directly convert thermal energy to electrical energy. They are also ecologically beneficial since they do not include chemical products, function quietly because they lack mechanical structures and/or moving components, and may be built using different fabrication technologies such as 3D printing, silicon technology, and screen printing etc. TEGs are also position-independent, have a long operational lifetime, and can be integrated into bulk and flexible devices. This review gives further in investigation of TEGs, beginning with a full discussion of their operating principle, kinds, materials utilized, figure of merit, and improvement approaches, which include various thermoelectric material arrangements and utilised technologies. This paper also discusses the use of TEGs in a variety of disciplines such as automobile and biomedical.

show abstract

“…In addition, the resulting thermal conductivity has an enormous value. That makes the thermoelectric have a small efficiency [15]- [19]. For this reason, it is necessary to do further research on thermoelectrics that can provide a prominent figure of merit value.…”

Section: Introductionmentioning

confidence: 99%

Effect of PbS Thin Film Thickness with Cu-Doping on Thermoelectric Properties Using Spin Coating Method

Pahlevi

Rahmadani

Diantoro

2022

JPSE (J. Phys. Sci. Eng.)

View full text Add to dashboard Cite

A thermoelectric device is produced from several materials that can convert heat into electrical energy or vice versa by generating the Seebeck effect and the Peltier effect. Then the energy can be formed from a heat source. This research used copper monosulfide (CuS) and lead monosulfide (PbS) as the primary materials for thermoelectric manufacture in the form of films. The method used in this research is a spin coating. This method uses the procedure of making a thin film on the substrate. The choice of this material is because CuS and PbS have high electrical conductivity and low thermal conductivity, so the value figure of merit (ZT) is high. From the thin film produced, an annealing process will be carried out to remove unwanted elements. After the sample is finished, the electrical conductivity test will be carried out with four probes, x-ray diffraction (XRD), and scanning electron microscopy (SEM). The four probes' conductivity test characterization results for one-layer, two-layers, and three-layers variations are 27.4 S/m, 53.6 S/m, and 106.8 S/m, respectively. From the SEM results, the grain size obtained from one-layer, two-layers, and three-layers variations are 227.9 nm, 397.8 nm, and 269.6 nm, respectively. Based on the XRD results, the crystal size obtained for variations of onelayer, two-layers, and three-layers has a size of 43.65 nm, 43.55 nm, and 43.60 nm, respectively. Furthermore, the lattice parameter has the same value from each sample variation, which is 5.93 Å.

show abstract

Thermoelectric Performance of Ge-Doped Mg2Si0.35Sn0.65 Thin Films

Cited by 4 publications

References 39 publications

Physics and technology of thermoelectric materials and devices

Physics and technology of thermoelectric materials and devices

Review on Thermoelectric Generators (TEG) and their applications: Progress, Challenges, and future prospects

Effect of PbS Thin Film Thickness with Cu-Doping on Thermoelectric Properties Using Spin Coating Method

Contact Info

Product

Resources

About