Thermoelectric infrared sensors by CMOS technology

Lenggenhager, R.; Baltes, H.; Peer, J.; Förster, Martin

doi:10.1109/55.192792

Cited by 76 publications

(26 citation statements)

References 8 publications

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“…9 However, silicon-based temperature sensors used as thermopile structures must have a large number of couples in order to generate a meaningful output. 10 In addition, although silicon-based thermopiles have been successfully integrated into integrated circuit (IC) processing, [11][12][13] there are still certain impediments to commercial realization of thermopiles. As a substrate, silicon has high thermal conductivity of about 150 W/m/K at room temperature, 14 which compromises the thermopile efficiency.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of Silicon Microchannel Plates as Temperature-Sensing Materials

Shi

Wang

et al. 2011

Journal of Elec Materi

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Silicon microchannel plates (Si MCPs) are prepared by photo-assisted electrochemical etching (PAECE), and their temperature-sensing behavior based on the Seebeck effect is studied. In particular, the dependence of the temperature sensitivity on the orientation and pore size of the Si MCPs is determined in detail. Our results clarify the relationship between the temperature sensitivity and orientation of the Si MCPs. When the angle between the measured orientation and edge of the square micropore is 45°, the samples with pore dimensions of 5 lm 9 5 lm and 3 lm 9 3 lm show temperature sensitivities of 1.88 mV/°C and 0.93 mV/°C, respectively. In general, the sample with pore size of 5 lm 9 5 lm exhibits higher sensitivity. Si MCPs which are compatible with integrated circuit (IC) processing have promising applications in integrated microtemperature sensing.

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Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of Silicon Microchannel Plates as Temperature-Sensing Materials

Shi

Wang

et al. 2011

Journal of Elec Materi

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“…Infrared thermometer is a new type of temperature measurement sensors, with low induction, high insulation, non-contact and other advantages, and can work in the condition of strong electromagnetic fields, which is suitable for the measurement of the temperature distribution of the rotor surface [4] [5]. Particularly, the thermometer measures the temperature indirectly based on the Stephen-Boltzmann phenomenon on the detected objects' surface, so as to effectively avoid the thermal conduction process, and the response time to a steady state thermal source is usually not more than 100 ms much shorter than that of traditional thermal sensitive devices, such as thermal resistance and thermocouple.…”

Section: Introductionmentioning

confidence: 99%

Notice of Violation of IEEE Publication Principles - Dynamic compensation for infrared thermometer based on Wiener model and particle swarm optimization algorithm

Tian

et al. 2009

2009 2nd IEEE International Conference on Computer Science and Information Technology

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A novel structure of dynamic model is proposed in this paper and applied to construct a dynamic model to correct the dynamic errors of the infrared thermometer, because of which the dynamic performance of the thermometer is effectively improved. The dynamic compensator is established and the compensation is described and explicated by the Wiener model. According to Wiener model, the novel structure is devised. The identification of thermometer non-linear dynamic compensator is achieved by particle swarm optimization algorithm. The results show that the stabilizing time of the thermometer is reduced less than 7 ms from 26 ms and the dynamic performance is obviously improved after compensation.

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“…Thus, front-side etching thermal isolation is widely adopted in CMOS-MEMS thermoelectric IR sensors. In the 1990s, comparative studies on front-side etching CMOS-MEMS thermoelectric IR sensors were conducted [28][29][30][31]. Polycrystalline silicon and aluminum, which are common materials in the CMOS process, were used as the thermocouples, and an IR sensor and a readout circuit were integrated.…”

Section: Front-side Etchingmentioning

confidence: 99%

“…Figure 3 depicts two different thermal isolation structures reported in the literature. The respective silicon substrates are etched either on the back side [22][23][24][25][26][27] or on the front side [28][29][30][31].…”

Section: Thermal Isolationmentioning

confidence: 99%

MEMS-based thermoelectric infrared sensors: A review

et al. 2017

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In the past decade, micro-electromechanical systems (MEMS)-based thermoelectric infrared (IR) sensors have received considerable attention because of the advances in micromachining technology. This paper presents a review of MEMS-based thermoelectric IR sensors. The first part describes the physics of the device and discusses the figures of merit. The second part discusses the sensing materials, thermal isolation microstructures, absorber designs, and packaging methods for these sensors and provides examples. Moreover, the status of sensor implementation technology is examined from a historical perspective by presenting findings from the early years to the most recent findings.

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Thermoelectric infrared sensors by CMOS technology

Cited by 76 publications

References 8 publications

Fabrication and Characterization of Silicon Microchannel Plates as Temperature-Sensing Materials

Fabrication and Characterization of Silicon Microchannel Plates as Temperature-Sensing Materials

Notice of Violation of IEEE Publication Principles - Dynamic compensation for infrared thermometer based on Wiener model and particle swarm optimization algorithm

MEMS-based thermoelectric infrared sensors: A review

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