GeTe, a small bandgap semiconductor that has native p-type defects due to Ge vacancies, is an important constituent in the thermoelectric material known as TAGS. TAGS is an acronym for alloys of GeTe with AgSbTe 2 , and compositions are normally designated as TAGS-x, where x is the fraction of GeTe. TAGS-85 is the most important with regard to applications, and there is also commercial interest in TAGS-80. The crystal structure of GeTe 1+d has a composition-dependent phase transformation at a temperature ranging from 430°C (d = 0) to $400°C (d = 0.02). The high-temperature form is cubic. The low-temperature form is rhombohedral for d < 0.01, as is the case for good thermoelectric performance. Addition of AgSbTe 2 shifts the phase transformation to lower temperatures, and one of the goals of this work is a systematic study of the dependence of transformation temperature on the parameter x. We present results on phase transformations and associated instabilities in TAGS compositions in the range of 70 at.% to 85 at.% GeTe.