Thermoelectric and mechanical properties of spark plasma sintered Cu3SbSe3 and Cu3SbSe4: Promising thermoelectric materials

Tyagi, Kriti; Gahtori, Bhasker; Bathula, Sivaiah; Toutam, Vijaykumar; Sharma, Sakshi; Singh, Niraj K.; Dhar, Ajay

doi:10.1063/1.4904996

Cited by 53 publications

(44 citation statements)

References 40 publications

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“…8 reported for other state-of-the-art TE materials [29,30,32,34,35,52], but are lower than those reported by the authors for n-type Si 80 Ge 20 nanostructured alloys [29,30].…”

Section: Accepted Manuscriptcontrasting

confidence: 74%

“…This nanostructured alloy exhibited a hardness of ~ 9 ± 0. alloy compared with other state-of-the-art thermoelectric materials, such as Bi 2 Te 3 , [33] Bi 2 Te 3 +0.1Vol.%SiC [33],LAST [78], Bi 0.5 Sb 1.5 Te 3 +0.2Vol.%B 4 C [79], PbTe+PbS [80], Cu 3 SbSe 3 and Cu 3 SbSe 4 [34], Cu 2 Se [52], Co 4 Sb 12 [35], In 0.1 Co 4 Sb 12 [35], n-type nanostructured Si 80 Ge 20 alloys [29,30]. [36], PbTe [36] and ntype nanostructured Si 80 Ge 20 alloy [29].…”

Section: Discussionmentioning

confidence: 95%

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Mechanical properties and microstructure of spark plasma sintered nanostructured p-type SiGe thermoelectric alloys

2015

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Please cite this article as: Sivaiah Bathula, M. Jayasimhadri, Ajay Dhar, Mechanical properties and microstructure of spark plasma sintered nanostructured p-type SiGe thermoelectric alloys, (2015), AbstractSiGe based thermoelectric (TE) materials have been employed for the past four decades for power generation in Radio-isotope thermoelectric generators (RTG). Recently "nanostructuring" has resulted in significantly increasing the figure-of-merit (ZT) of both n and p-type of SiGe and thus nanostructured Si 80 Ge 20 alloys are evolving as a potential replacement for their conventional bulk counterparts in designing efficient RTGs. However, apart from ZT, their mechanical properties are equally important for the long term reliability of their TE modules. Thus, we report the mechanical properties of p-type nanostructured Si 80 Ge 20 alloys, which were synthesized employing spark plasma sintering of mechanically alloyed nanopowders of its constituent elements with 1.2% boron doping. Nanostructured p-type Si 80 Ge 20 alloys exhibited a hardness of ~9 ± 0.1 GPa, an elastic modulus of ~135 ± 1.9 GPa, a compressive strength of 108 ± 0.2 MPa, fracture toughness of ~1.66 ± 0.04 MPa√m with a thermal shock resistance value of 391 ± 21 Wm -1 . This combination of good mechanical properties coupled with higher reported ZT of nanostructured p-type Si 80 Ge 20 alloys are render it to be a potential material for power generation applications, compared to its bulk counterpart.

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“…8 reported for other state-of-the-art TE materials [29,30,32,34,35,52], but are lower than those reported by the authors for n-type Si 80 Ge 20 nanostructured alloys [29,30].…”

Section: Accepted Manuscriptcontrasting

confidence: 74%

Section: Discussionmentioning

confidence: 95%

Mechanical properties and microstructure of spark plasma sintered nanostructured p-type SiGe thermoelectric alloys

2015

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“…This value is comparable with our previously reported 5 microwave assisted Cu 3 SbSe 4 (0.14 at 300 K) [31] and also with CuSb 0.98 Ti 0.02 Se 2 (0.0041 at 300 K) [18]. But lower than reported in Cu 3 Sb 0.98 Bi 0.02 Se 4 (0.7 at 600 K) [12], in Cu 3 Sb 0.975 Sn 0.025 Se 4 (0.75 at 673 K) [20], in Cu 3 Sb 0.94 Sn 0.06 Se 3.5 S 0.5 (1.1 at 700 K) [24], in Cu 3 Sb 0.98 Sn 0.02 Se 4 (1.05 at 700 K) [25], in Cu 3 SbSe 4 10 (0.30 at 550 K) [28], in Cu 2.925 SbSe 4 (0.50 at 673 K) [29], in Cu 2.95 Sb 0.98 Sn 0.02 Se 4 (~0.7 at 673 K) [30] and in Cu 3 Sb 0.97 Al 0.03 Se 4 (0.58 at 600 K) [44]. This reported value might be improved at higher temperatures or may be with controlled addition of different dopant.…”

Section: Resultsmentioning

confidence: 99%

Thermoelectric properties of nanocrystalline Cu₃SbSe₄ thin films deposited by a self-organized arrested precipitation technique

et al. 2015

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In the present investigation, tetragonal p-type stannite group member Cu 3 SbSe 4 have been successfully synthesized in an aqueous alkaline medium using self organized arrested precipitation technique (APT). The deposited thin films were characterized by UV-Vis spectrophotometry, X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy 10 (HRTEM), energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS). The thermoelectric figure of merit (ZT) is investigated by measurement of electrical conductivity, Seebeck coefficient and thermal conductivity of deposited thin films. On the basis of experimental details, reaction mechanism is also discussed in detail. Optical absorption spectra show direct allowed type transition with band gap energy 1.96 eV. XRD results indicate that, APT is a favourable technique to 15 synthesize pure Cu 3 SbSe 4 thin films having tetragonal crystal structure. FESEM and HRTEM micrographs of Cu 3 SbSe 4 show spherically diffused granular morphology having average grain size 40 nm. EDS and XPS spectrums confirm presence of Cu, Sb and Se elements in composition. The compact nature leads to a higher electrical conductivity and smaller grain size of material leads to lower thermal conductivity in thin film, so that promising ZT value is obtained at room temperature (0.2 at 300 K). The 20 present work provides a new method to engineer efficient thermoelectric material for power generation in an effective manner.

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“…Cu 3 SbSe 3 and CuSbSe 2 both have ultralow thermal conductivity that was thought to be governed by a large lattice anharmonicity [12] caused by lone-pair electron of Sb [13]. Compared with widely studied Cu 3 SbSe 4 , researches of Cu 3 SbSe 3 are inadequate because it is difficult to obtain the single phase [14] and they have poor TE properties [15]. After being sealed in quartz ampoules and followed by a long-time annealing, there are still other phases [16].…”

Section: Introductionmentioning

confidence: 99%

Enhanced Thermoelectric Properties of Cu3SbSe3-Based Composites with Inclusion Phases

Ren

Tan

et al. 2016

Energies

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Cu 3 SbSe 3 -based composites have been prepared by self-propagating high-temperature synthesis (SHS) combined with spark plasma sintering (SPS) technology. Phase composition and microstructure analysis indicate that the obtained samples are mainly composed of Cu 3 SbSe 3 phase and CuSbSe 2 /Cu 2-x Se secondary phases. Our results show that the existence of Cu 2-x Se phase can clearly enhance the electrical conductivity of the composites (~16 S/cm), which is 2.5 times higher than the pure phase. The thermal conductivity can remain at about 0.30 W·m −1 ·K −1 at 653 K. A maximum ZT (defined as ZT = S 2 σT/κ, where S, σ, T, κ are the Seebeck coefficient, electrical conductivity, absolute temperature and total thermal conductivity) of the sample SPS 633 can be 0.42 at 653 K, which is 60% higher than the previously reported values. Our results indicate that the composite structure is an effective method to enhance the performance of Cu 3 SbSe 3 .

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Thermoelectric and mechanical properties of spark plasma sintered Cu3SbSe3 and Cu3SbSe4: Promising thermoelectric materials

Cited by 53 publications

References 40 publications

Mechanical properties and microstructure of spark plasma sintered nanostructured p-type SiGe thermoelectric alloys

Mechanical properties and microstructure of spark plasma sintered nanostructured p-type SiGe thermoelectric alloys

Thermoelectric properties of nanocrystalline Cu₃SbSe₄ thin films deposited by a self-organized arrested precipitation technique

Enhanced Thermoelectric Properties of Cu3SbSe3-Based Composites with Inclusion Phases

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Thermoelectric and mechanical properties of spark plasma sintered Cu3SbSe3 and Cu3SbSe4: Promising thermoelectric materials

Cited by 53 publications

References 40 publications

Mechanical properties and microstructure of spark plasma sintered nanostructured p-type SiGe thermoelectric alloys

Mechanical properties and microstructure of spark plasma sintered nanostructured p-type SiGe thermoelectric alloys

Thermoelectric properties of nanocrystalline Cu3SbSe4 thin films deposited by a self-organized arrested precipitation technique

Enhanced Thermoelectric Properties of Cu3SbSe3-Based Composites with Inclusion Phases

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Thermoelectric properties of nanocrystalline Cu₃SbSe₄ thin films deposited by a self-organized arrested precipitation technique