2007
DOI: 10.1007/s11669-007-9023-z
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Thermodynamics of the Au-Si-O System: Application to the Synthesis and Growth of Silicon-Silicon dioxide Nanowires

Abstract: The Solid-Vapor-Liquid-Solid (SVLS) process is a fundamental mechanism for the growth of nanowires. In this article, experimental observations and assessment of thermodynamic data have been used to explain the Solid-Vapor-Liquid-Solid (SVLS) mechanism for the growth of silicon-based nanowires. The binary phase diagram of nanoparticle (Au-Si) systems has been evaluated from information on Gibbs energy of the bulk and surface tension of the liquid phase. At 1100°C, temperature commonly used for the growth of nan… Show more

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Cited by 43 publications
(32 citation statements)
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References 33 publications
(34 reference statements)
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“…As the duration time increased, more and more silicon and oxygen diffused and dissolved into the droplet until supersaturated. The substrate provides the droplet with silicon until it get saturated and hence, no more silicon atoms were attracted [5]. Therefore, the SLS mechanism is not responsible of SiOxNWs complete growth processes.…”
Section: (B)mentioning
confidence: 99%
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“…As the duration time increased, more and more silicon and oxygen diffused and dissolved into the droplet until supersaturated. The substrate provides the droplet with silicon until it get saturated and hence, no more silicon atoms were attracted [5]. Therefore, the SLS mechanism is not responsible of SiOxNWs complete growth processes.…”
Section: (B)mentioning
confidence: 99%
“…If the SiO gas not enough to dissolve into the droplet the growth will stop and the final shape will look like tree roots or comet shape, but if the deposition time is more enough, these Au balls will aggregates and form bigger ball as in stage (4), which then let the wires continue to rise and form SiO x nanowires with Au cap at the end of the wire, see stage (5). The percentage of gold is changing in the same wire or a fiber depending on the location.…”
Section: (B)mentioning
confidence: 99%
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“…This argument cannot be accepted as there is no thermodynamic (energetic) reason for the silicon of the wafer to be continually attracted after the droplet become saturated. Therefore, the availability of silicon monoxide gas at a temperature >900°C can merge the previous two mechanisms to be Solid-VLS mechanism [21]. So both solid and gas phases can play an important role as the two main sources of silicon atoms.…”
Section: Introductionmentioning
confidence: 99%