Thermodynamics and growth kinetical consideration of metal-nitride formation by nitrogen implantation

Liu, B. X.; Zhou, Xiaocong; Li, H.-D.

doi:10.1002/pssa.2211130102

Cited by 31 publications

(6 citation statements)

References 34 publications

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“…These results indicate that the nitrogen content of post-implanted annealed Cu films in both series have reached the value which is required for the stoichiometric development of the copper azide phase (CuN 3 ). According to the literature, this value is 18% nitrogen in Cu [19]. A small peak of Cu 3 N (2 0 0) was also observed at 2θ = 47.78°for all the implanted samples.…”

Section: Crystallography and Nanostructure Of The Films: Figs 1a And Bsupporting

confidence: 67%

Influence of ion dose on nanostructure morphology and electrical properties of nitrogen implanted‐annealed copper

Kazemeini-Asl¹,

Larijani

Fathollahi³

2014

Micro & Nano Letters

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Cu thin films sputter-coated on single crystals of silicon were implanted with 30 keV nitrogen ions under various doses from 1.9 × 10 17 to 5.7 × 10 17 ions/cm 2. The prepared samples were subsequently annealed in nitrogen atmosphere. The grazing incidence X-ray diffraction analysis revealed that in addition to the crystalline copper nitride phase, copper azides were developed by nitrogen ion implantation. With an increase of the implantation dose to 2.3 × 10 18 ions/cm 2 , much of the Cu film was transformed to the crystalline Cu 3 N phase. Furthermore, the effect of nitrogen ion implantation on Cu thin films under various doses was investigated. The structural properties, morphology and sheet resistance of samples were investigated by grazing incidence X-ray diffraction, atomic force microscopy, field emission scanning electron microscopy and four-point probe techniques, respectively. In addition, the dependence of resistivity of the implanted samples on the implantation dose as well as structural properties is discussed.

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Section: Crystallography and Nanostructure Of The Films: Figs 1a And Bsupporting

confidence: 67%

Influence of ion dose on nanostructure morphology and electrical properties of nitrogen implanted‐annealed copper

Kazemeini-Asl¹,

Larijani

Fathollahi³

2014

Micro & Nano Letters

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“…When considering the breadth of the peak, it is a convincing inference that this peak specifies crystalline behavior. The peak of orthorhombic AgN 3 (112) corresponds to the value of 2θ = 36.5° [ 50 ]. The higher intensity of an Ag phase peak is due to the (111) preferred orientation.…”

Section: Resultsmentioning

confidence: 99%

Effect of Target Composition and Sputtering Deposition Parameters on the Functional Properties of Nitrogenized Ag-Permalloy Flexible Thin Films Deposited on Polymer Substrates

2018

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We report the first results of functional properties of nitrogenized silver-permalloy thin films deposited on polyethylene terephthalic ester {PETE (C10H8O4)n} flexible substrates by magnetron sputtering. These new soft magnetic thin films have magnetization that is comparable to pure Ni81Fe19 permalloy films. Two target compositions (Ni76Fe19Ag5 and Ni72Fe18Ag10) were used to study the effect of compositional variation and sputtering parameters, including nitrogen flow rate on the phase evolution and surface properties. Aggregate flow rate and total pressure of Ar+N2 mixture was 60 sccm and 0.55 Pa, respectively. The distance between target and the substrate was kept at 100 mm, while using sputtering power from 100–130 W. Average film deposition rate was confirmed at around 2.05 nm/min for argon atmosphere and was reduced to 1.8 nm/min in reactive nitrogen atmosphere. X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, vibrating sample magnetometer, and contact angle measurements were used to characterize the functional properties. Nano sized character of films was confirmed by XRD and SEM. It is found that the grain size was reduced by the formation of nitride phase, which in turns enhanced the magnetization and lowers the coercivity. Magnetic field coupling efficiency limit was determined from 1.6–2 GHz frequency limit. The results of comparable magnetic performance, lowest magnetic loss, and highest surface free energy, confirming that 15 sccm nitrogen flow rate at 115 W is optimal for producing Ag-doped permalloy flexible thin films having excellent magnetic field coupling efficiency.

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“…Indeed high melting points have been correlated with high cation-nitrogen bond energies and high heats of formation [15]. The heats of formation of the early interstitial nitrides are more than an order of magnitude higher than those of the late interstitial nitrides [47,48]. Therefore, for late interstitial nitrides, overcoming kinetic and possibly ionization energy barriers at high temperatures competes with their tendency to dissociate.…”

Section: Resultsmentioning

confidence: 99%

Synthesis of hexagonal Ni₃N using high pressures and temperatures

Guillaume

Morniroli

Frost

et al. 2006

J. Phys.: Condens. Matter

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The only known bulk ambient pressure nickel nitride phase is hexagonal Ni(3)N (space group P6(3)22). Multianvil synthesis experiments at 20 GPa and 2000 K using nickel (Ni) and sodium azide (NaN(3)) starting materials, and ex situ analysis using transmission electron microscopy and scanning electron microscopy measurements show that this phase can be recovered at ambient pressure (space group P6(3)22, a = 4.62 Å, c = 4.30 Å, Z = 2). Formation of this phase is correlated with the repulsive interactions between closely spaced nitrogen ions and with the extent of thermal stability of nickel nitride at ambient and at high densities. These two factors are also important in relating the high temperature and pressure behaviour of nickel nitride to those of several other interstitial nitrides recovered from similar pressures after heating. Further, we report formation of a sodium rhenium nitride phase by reaction of the azide with the rhenium capsule in which the reactants were contained.

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Thermodynamics and growth kinetical consideration of metal-nitride formation by nitrogen implantation

Cited by 31 publications

References 34 publications

Influence of ion dose on nanostructure morphology and electrical properties of nitrogen implanted‐annealed copper

Influence of ion dose on nanostructure morphology and electrical properties of nitrogen implanted‐annealed copper

Effect of Target Composition and Sputtering Deposition Parameters on the Functional Properties of Nitrogenized Ag-Permalloy Flexible Thin Films Deposited on Polymer Substrates

Synthesis of hexagonal Ni₃N using high pressures and temperatures

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Thermodynamics and growth kinetical consideration of metal-nitride formation by nitrogen implantation

Cited by 31 publications

References 34 publications

Influence of ion dose on nanostructure morphology and electrical properties of nitrogen implanted‐annealed copper

Influence of ion dose on nanostructure morphology and electrical properties of nitrogen implanted‐annealed copper

Effect of Target Composition and Sputtering Deposition Parameters on the Functional Properties of Nitrogenized Ag-Permalloy Flexible Thin Films Deposited on Polymer Substrates

Synthesis of hexagonal Ni3N using high pressures and temperatures

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Synthesis of hexagonal Ni₃N using high pressures and temperatures