Thermodynamic Study of SiC Utilizing a Mass Spectrometer

Abstract

The sublimation of hexagonal SiC has been studied under equilibrium conditions. The predominant gaseous species above SiC are Si, SiC2, and Si2C. By combining the heat of formation of gaseous Si from solid SiC and the known standard heat of formation of SiC, a value of 113 kcal/g atom is obtained for the heat of sublimation of Si at 298°K. From the measured partial pressures, using estimated free energy functions, dissociation energies for Si2, Si3, SiC, SiC2, Si2C, Si2C2, Si2C3, and Si3C are calculated and compared with previously known dissociation energies for group IV B molecules.

Anions in laser-induced plasmas

“…The state 2 1 P with T e ¼ 27;415 cm À1 gives a negligible contribution to the partition function for T 12;000 K. The SiC molecules do not appear at higher temperatures in the simulations. The experimental value of the ionization potential of the SiC molecule is IðSiCÞ ¼ 9:1 eV taken from [94,95].…”

Epitaxial Graphene on SiC: A Review of Growth and Characterization

“…For this method, SiCs up to 6 inch are commercially available, providing epitaxial conditions and existing as semiconducting (p-and n-type), semi-insulating, and in different polytypes which make different device designs possible. The growth of epitaxial graphene by the sublimation method is based on annealing the SiC crystal at high temperature; during sample annealing, primarily Si leaves the SiC crystal [64], leaving a carbon-rich surface behind. As silicon has a higher vapor pressure than carbon in the SiC substrate [31], the Si atoms therefore desorb first from the sample surface during the annealing process, leaving the C atoms behind, and allow a carbon-rich surface to emerge until the final graphene is formed.…”

The Molecular Structure and Ionization Potential of Si2: The Role of the Excited States in the Photoionization of Si2

“…[1][2][3][4][5][6][7][8][9][10][11] The discovery of emissive nanometer-scale silicon clusters has further heightened this interest. 3 Fundamental to the buildup of nanometer-size silicon clusters is an understanding of the underlying silicon-silicon interactions existing in the cluster which, to first order, are strongly influenced by the nature of the two-body Si-Si interaction (i.e., the silicon dimer bond).…”