2002
DOI: 10.1007/s11664-002-0151-2
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Thermodynamic modeling of native point defects and dopants of GaN semiconductors

Abstract: A thermodynamic modeling of GaN was carried out to describe the thermodynamic behavior of native defects, dopants, and carriers (free electrons and holes) in GaN semiconductors. The compound energy model (CEM) was used. An unintentionally doped GaN was taken as an example. Oxygen was introduced into the model as the unintentionally doped impurity, according to the practical experimental phenomena. The energies of component compounds in the model were defined based on the results of the ab initio calculations a… Show more

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Cited by 16 publications
(2 citation statements)
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“…However, in reality there exists always a small range of solubility and in some cases it is important to model this, for example in compound semiconductors. [22][23][24][25][26] Defects can be vacancies, anti-site atoms, and interstitials and they can also be charged. When developing multicomponent databases the defects considered are…”
Section: Modeling Defects In Ordered Phasesmentioning
confidence: 99%
“…However, in reality there exists always a small range of solubility and in some cases it is important to model this, for example in compound semiconductors. [22][23][24][25][26] Defects can be vacancies, anti-site atoms, and interstitials and they can also be charged. When developing multicomponent databases the defects considered are…”
Section: Modeling Defects In Ordered Phasesmentioning
confidence: 99%
“…Chen then used this model to successfully model the semiconductor compounds GaAs as well as CdTe [10] [32]. It has also been used for the GaN semiconductor [34] and recently for ZnO [35]. The five sublattice model for the PbX (X=S,Te) is given as: (Pb,Va,Va -2 )(X,Va,Va +2 )(Va)(Va,e -1 )(Va,h +1 ), where the first, second, third, fourth, and fifth sublattices are for the Pb, X, interstitial, electrons, and holes respectively.…”
Section: -Sublattice Modelmentioning
confidence: 99%