Thermodynamic model of nucleation and growth of plasma deposited microcrystalline silicon

Robertson, John

doi:10.1063/1.1529090

Cited by 23 publications

(6 citation statements)

References 30 publications

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“…This result is very different from that of samples prepared by N 2 sputtering, where most of the silicon nanoparticles were in an amorphous state [11]. The low crystallization temperature in the present case may be induced by the hydrogen dissociated from the NH 3 gas [12].…”

Section: Resultscontrasting

confidence: 86%

Improved photoluminescence of silicon nanocrystals in silicon nitride prepared by ammonia sputtering

Ma¹,

Feng²,

Zhang³

2006

Nanotechnology

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In the present work we investigated the photoluminescence property of silicon nanocrystals in silicon nitride prepared by ammonia sputtering. Silicon nanocrystals were demonstrated to form even after thermal annealing at 700 °C. Compared with the control sample using N(2) as the reactive gas, the luminescence intensity of silicon nanocrystals in silicon nitride prepared by NH(3) sputtering was greatly increased. The improvement in photoluminescence was attributed to the introduction of hydrogen-related bonds, which could well passivate the nonradiative defects existing at the interface between silicon nanocrystals and the silicon nitride matrix.

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Section: Resultscontrasting

confidence: 86%

Improved photoluminescence of silicon nanocrystals in silicon nitride prepared by ammonia sputtering

Ma¹,

Feng²,

Zhang³

2006

Nanotechnology

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“…Fig. 3(b) shows the [17]. Another explanation may be the adatom diffusivity that varies with T as reported in [66].…”

Section: Impact Of Substrate Temperature On Nanocrystalline Growthmentioning

confidence: 61%

“…This material has already been studied for several decades and found its way into several important applications including photovoltaic devices [1]- [8], thin-film transistors [9], and microelectromechanical systems [10]. Significant effort was put on the experimental [11]- [16] and theoretical [17] investigation of its growth process [4], [18], as well as its electrical [19]- [21] and optical properties [2], [15].…”

mentioning

confidence: 99%

Strategies for Doped Nanocrystalline Silicon Integration in Silicon Heterojunction Solar Cells

Seif

Descoeudres

Nogay

et al. 2016

IEEE J. Photovoltaics

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Carrier collection in silicon heterojunction (SHJ) solar cells is usually achieved by doped amorphous silicon layers of a few nanometers, deposited at opposite sides of the crystalline silicon wafer. These layers are often defect-rich, resulting in modest doping efficiencies, parasitic optical absorption when applied at the front of solar cells, and high contact resistivities with the adjacent transparent electrodes. Their substitution by equally thin doped nanocrystalline silicon layers has often been argued to resolve these drawbacks. However, low-temperature deposition of highly crystalline doped layers of such thickness on amorphous surfaces demands sophisticated deposition engineering. In this paper, we review and discuss different strategies to facilitate the nucleation of nanocrystalline silicon layers and assess their compatibility with SHJ solar cell fabrication. We also implement the obtained layers into devices, yielding solar cells with fill factor values of over 79% and efficiencies of over 21.1%, clearly underlining the promise this material holds for SHJ solar cell applications.Index Terms-Microcrystalline silicon, nanocrystalline silicon, silicon heterojunctions (SHJs), solar cells.

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“…The composition depends on the substrate on which the material is grown 2–4 in a way that in the initial growth regime varying fractions of hydrogenated amorphous silicon (a‐Si:H) and/or voids are formed 5. Significant amounts of a‐Si:H usually accompany crystallite nucleation 6–9, in particular on substrates which do not contain crystalline silicon (c‐Si) 5, while in the following growth stage crystallites coalesce and a steady state with mostly columnar crystallites is established 10, 11. In contrast, on surfaces containing c‐Si, e.g.…”

Section: Introductionmentioning

confidence: 99%

Use of seed layers for structure, optical, and electronic transport measurements on microcrystalline silicon on glass

Ross

Mai

Carius

et al. 2011

Progress in Photovoltaics

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A detailed structural analysis is provided by which the benefits of thin undoped 'seed layers' for the preparation of microcrystalline silicon on glass for material characterization are demonstrated. Raman spectroscopy and photothermal deflection spectroscopy (PDS) results reveal that 'seed layers' are not only effective for the growth of structurally homogenous films and for an extension of the range of deposition parameters in which highly crystalline material is grown, but also allow for preparing material on glass with properties very close to that of functional layers in thin film solar cells. Films which have successfully been tailored in this way are characterized with respect to electrical conductivity and optical absorption. Regarding conductivity, hydrogenated microcrystalline silicon material grown on a 'seed layer' exhibits a structure-dependent behaviour which is very similar to that observed for material grown on bare glass. Regarding optical absorption spectra, residual interference fringes, which indicate structural non-uniformities, can be successfully removed by means of 'seed layers'. As a result, more information is obtainable from PDS, and the data gained in this way are in good agreement with Raman spectroscopy results.

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Thermodynamic model of nucleation and growth of plasma deposited microcrystalline silicon

Cited by 23 publications

References 30 publications

Improved photoluminescence of silicon nanocrystals in silicon nitride prepared by ammonia sputtering

Improved photoluminescence of silicon nanocrystals in silicon nitride prepared by ammonia sputtering

Strategies for Doped Nanocrystalline Silicon Integration in Silicon Heterojunction Solar Cells

Use of seed layers for structure, optical, and electronic transport measurements on microcrystalline silicon on glass

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