Thermodynamic evidence of the ferroelectric Berry phase in europium-based ferrobismuthite Eu2Bi2Fe4O12

Rebaza, A.V. Gil; Toro, C. E. Deluque; Chanduví, H.H. Medina; Téllez, D.A. Landı́nez; Roa-Rojas, J.

doi:10.1016/j.jallcom.2021.161114

Cited by 5 publications

(3 citation statements)

References 43 publications

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“…In a complete study of this material under pressures up to 18 GPa, a shift of the transition towards higher temperature regimes was observed (Gil-Rebaza et al, 2021). This Curie temperature shift is due to the increase in pressure decreasing the overlap between the Fe-3d(e g ) and O-2p orbitals in the FeO 6 octahedra of the material, as expected for any insulating perovskite and in oxide material molecules (Korney et al, 2005;Korney & Bellaiche, 2007).…”

Section: Electronic Properties and Phase Transitionmentioning

confidence: 62%

“…Given the experimental results suggesting the possibility of ferroelectric ordering at temperatures below 113 K, the Berry phase is used to calculate the density of electronic states in this family of materials (Gil Rebaza et al, 2021). This methodology is applicable because spontaneous ferroelectric polarization is intrinsically related to structural phase transitions between centrosymmetric and non-centrosymmetric cells.…”

Section: Electronic Properties and Phase Transitionmentioning

confidence: 99%

“…A graphical representation of the band gap modification around the Fermi level can be seen in figure 6d, where the impossibility of obtaining polarized spin currents when the Berry transition takes place at low temperatures is clearly observed. Additionally, an electric polarization curve appears gradually when Berry's distortion is performed (Gil Rebaza et al, 2021).…”

Section: Electronic Properties and Phase Transitionmentioning

confidence: 99%

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Rare-earth ferrobismuthites: ferromagnetic ceramic semiconductors with applicability in spintronic devices

Roa-Rojas

Farfán

Toro

et al. 2022

Rev. Acad. Colomb. Cienc. Ex. Fis. Nat.

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We report here the synthesis process of the perovskite-like complex material Bi0.5R0.5FeO3 (R=Eu, Sm, Dy) using the ceramic method, as well as its structural, optical, magnetic, and electrical characterizations. Refined X-ray diffraction data revealed that this material crystallizes in an orthorhombic structure (space group Pnma number 62). The band gap value in the optical response shown in the diffuse reflectance spectroscopy curve was typical of semiconductor materials. The magnetization exhibited a very low coercive field hysteretic behavior, which is characteristic of weak ferromagnetism, for all temperatures examined below 300 K and the various magnetic fields applied. The real and complex electric permittivity curves showed the occurrence of dielectric relaxation processes at 113 K in agreement with reports of pyroelectric and thermo-stimulated currents as a function of temperature revealing the appearance of ferroelectric polarization below 113 K with possible magnetoelectric coupling. On the other hand, we made a theoretical study of the electronic structure with and without the inclusion of a Berry distortional phase and ab-initio calculations following the density functional theory formalism and the pseudopotential plane wave method. In this formalism, the exchange and correlation mechanisms are described by the generalized gradient approach (GGA + U) considering spin polarization. The Berry phase analysis suggested the occurrence of ferroelectricity at temperatures below 113 K consistent with the experimental analysis evidencing a biferroic behavior at low temperatures given that the distortional phase introduces hybridizations between the 3d-Fe and 2p-O states favoring the appearance of Dzyaloshinskii-Moriya interactions, which, in turn, facilitate the appearance of ferroelectricity coexisting with a weak ferromagnetism. The thermodynamic properties in the presence or absence of the Berry phase by means of the Debye quasiharmonic model revealed the appearance of a ferroelectric transition at 113 K, which corroborates their magnetoelectric nature at low temperatures. The ferromagnetic semiconducting character found at room temperature enhances this material for applications in spintronics technology.

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Section: Electronic Properties and Phase Transitionmentioning

confidence: 62%

Section: Electronic Properties and Phase Transitionmentioning

confidence: 99%

Section: Electronic Properties and Phase Transitionmentioning

confidence: 99%

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Rare-earth ferrobismuthites: ferromagnetic ceramic semiconductors with applicability in spintronic devices

Roa-Rojas

Farfán

Toro

et al. 2022

Rev. Acad. Colomb. Cienc. Ex. Fis. Nat.

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Spintronic Properties in Complex Perovskites: A Concordance Between Experiments and Ab-Initio Calculations

Roa-Rojas

Toro

Rebaza

et al. 2022

Research Topics in Bioactivity, Environment and Energy

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Weak Ferromagnetism in the FeCr2O4 Semiconductor Spinel with Half-Metallic Feature in the Ground State

Cerón

Téllez

2021

J. Electron. Mater.

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Materials with multifunctional properties are currently being studied for countless technological applications. In the present work, an experimental and theoretical study of the iron-chromite spinel FeCr 2 O 4 produced by the solid-state reaction technique is reported. Structural analysis from x-ray diffraction experiments revealed the crystallization of the material into a cubic structure and morphological and compositional studies showed the granular character, with nanometric and micrometric dimensions whose compositions are as expected from its chemical stoichiometry. Optical characterization reveals semiconducting behavior with bandgap 1.52 eV and the magnetic response shows weak ferromagnetic character at room temperature. The density of electronic states in the ground state evidences characteristic semiconducting for one spin polarization and conducting for the other close to the Fermi level, which is compatible with a half-metallic behavior with magnetic moment of 2.0 µ B per unit cell.

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Thermodynamic evidence of the ferroelectric Berry phase in europium-based ferrobismuthite Eu2Bi2Fe4O12

Cited by 5 publications

References 43 publications

Rare-earth ferrobismuthites: ferromagnetic ceramic semiconductors with applicability in spintronic devices

Rare-earth ferrobismuthites: ferromagnetic ceramic semiconductors with applicability in spintronic devices

Spintronic Properties in Complex Perovskites: A Concordance Between Experiments and Ab-Initio Calculations

Weak Ferromagnetism in the FeCr2O4 Semiconductor Spinel with Half-Metallic Feature in the Ground State

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