Thermodynamic aspects of the grain boundary segregation in Cu(Bi) alloys

Chang, Li-Chung; Rabkin, Eugen; Straumal, Boris B.; Baretzky, B.; Gust, W.

doi:10.1016/s1359-6454(99)00264-5

Cited by 107 publications

(42 citation statements)

References 10 publications

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“…As bismuth is a strong segregant into copper grain boundaries [2,4], non-linear segregation is expected to happen [16,17]. Moreover, bismuth atoms can interact with each other when they are in copper grain boundaries (an attractive interaction energy α = -13 to -43 kJ.mol -1 was deduced for the segregated bismuth atoms in copper grain boundaries in [6]).…”

Section: Model Proposed To Describe the Concentration Profilesmentioning

confidence: 99%

“…Moreover, bismuth atoms can interact with each other when they are in copper grain boundaries (an attractive interaction energy α = -13 to -43 kJ.mol -1 was deduced for the segregated bismuth atoms in copper grain boundaries in [6]). Fowler-Guggenheim isotherm can therefore be used to describe the Cu/Bi system segregation behavior [2,4]. Figure 5 shows several segregation isotherms with different values for the attractive interaction energy α.…”

Section: Model Proposed To Describe the Concentration Profilesmentioning

confidence: 99%

“…The differential equation is the following: Looking now for alternative explanations, the diffusion-drift model proposed by Bokstein et al [19] could represent a good candidate, as it leads to similar concentration profiles and moves the grain boundary penetration process in direction of C regime. However, it uses Henry's segregation isotherm, which doesn't seem relevant in this case, as it is only true for dilute solutions whereas bismuth is a strong segregant into copper grain boundaries [2,4]. Another alternative description could lie on the use of a concentration dependence of the grain boundary diffusion coefficient in a pure C regime.…”

Section: Model Proposed To Describe the Concentration Profilesmentioning

confidence: 99%

See 2 more Smart Citations

Diffusion-Controlled Liquid Bismuth Induced Intergranular Embrittlement of Copper

Laporte

Wolski

Berger

et al. 2005

DDF

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The consequences of the contact between liquid bismuth and a copper bicrystal are investigated at 500°C. Atoms of bismuth are shown to penetrate and embritlle the copper grain boundary. Grain boundary concentration profiles of bismuth are obtained on fracture surfaces by both Auger electron spectroscopy and He4+ Rutherford backscattering spectroscopy. The maximum bismuth intergranular concentration is calculated from experimental data to be about 1.7 monolayers (near the liquid bismuth / solid copper interface). The overall profiles are significantly different from typical erfc profiles and an interpretation is proposed, based on the coupling effect between grain boundary diffusion and non-linear segregation. These results allow us to conclude on the absence of grain boundary wetting for the Cu / Bi system at 500°C.

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Section: Model Proposed To Describe the Concentration Profilesmentioning

confidence: 99%

Section: Model Proposed To Describe the Concentration Profilesmentioning

confidence: 99%

Section: Model Proposed To Describe the Concentration Profilesmentioning

confidence: 99%

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Diffusion-Controlled Liquid Bismuth Induced Intergranular Embrittlement of Copper

Laporte

Wolski

Berger

et al. 2005

DDF

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“…Several authors have studied the Copper-Bismuth system and it is well-documented [1][2][3][4]. The low solubility of Bi (Bismuth) in a Cu (Copper) lattice (∼200 ppm) and the affinity of Bi to segregate make this system attractive for investigating basic segregation.…”

Section: Introductionmentioning

confidence: 99%

The Segregation of Bi and S from a Cu(Bi,S) Ternary System

Terblans

Swart

2009

e-J. Surf. Sci. Nanotechnol.

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In this paper the ternary segregation behaviour of Bi and S in a dilute Cu(Bi,S) polycrystalline crystal was investigated by using Auger electron spectroscopy to monitor the surface concentrations of Bi and S during constant temperature segregation measurements that were preformed in the temperature range 723 to 973 K at 50 K intervals. It was found that initially both Bi and S segregated to the surface. At first the segregation rate of S was higher than that of Bi. The Bi segregated to the surface until it reached a surface maximum concentration (2-6%) and subsequently the segregation rate of both S and Bi decreased and the Bi started to desegregate. The S replaced the Bi completely on the surface. Diffusion parameters, namely the activation energy (Q) and pre-exponential factor (D0) were determined for Bi as 181.6 kJ·mol −1 and 3.7 × 10 −5 m 2 ·s −1 , respectively. The S concentration in the crystal was unknown and the S segregation profiles were used to estimate the S concentration in the Cu crystal as 122 ± 12 ppm.

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“…Although the predicted trends have been validated with direct high-resolution transmission electron microscopy (HRTEM) [9,[14][15][16][17][18][19] and proven useful for forecasting sintering behaviors [9,10,[13][14][15]20], these GB λ diagrams are not yet rigorous GB complexion diagrams with well-defined transition lines. An early report in 1999 [21] also constructed a GB complexion diagram for Cu-Bi via a rather simple model that considered GBs as "quasi-liquid layers" to explain the GB segregation behaviors measured by Auger electron spectroscopy (AES), but more recent aberration-corrected scanning transmission electron microscopy (AC STEM) observed an ordered bilayer complexion in Cu-Bi instead [22]. GB complexion diagrams with first-order transition lines and critical points have been constructed using diffuse-interface (phase-field) [1,23,24] and latticetype [16,[25][26][27][28] models, which have not yet been validated with experiments systematically, particularly by direct HRTEM or STEM characterization.…”

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confidence: 99%

Calculation and validation of a grain boundary complexion diagram for Bi-doped Ni

Zhou

Zhang

et al. 2017

Scripta Materialia

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a b s t r a c t a r t i c l e i n f oA grain boundary (GB) "phase" (complexion) diagram is computed via a lattice type statistical thermodynamic model for the average general GBs in Bi-doped Ni. The predictions are calibrated with previously-reported density functional theory calculations and further validated by experiments, including both new and old aberrationcorrected scanning transmission electron microscopy characterization results as well as prior Auger electron spectroscopy measurements. This work supports a major scientific goal of developing GB complexion diagrams as an extension to bulk phase diagrams and a useful materials science tool.© 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. Grain boundaries (GBs) can undergo phase-like transformations, for example, premelting [1] or adsorption [2] transitions, which can influence a broad range of materials properties [3][4][5]. Thus, GBs can be treated as "interfacial phases" that are thermodynamically two-dimensional (2-D) despite that they have thermodynamically-determined interfacial widths as well as through-thickness compositional and structural gradients. A new term "complexion" was introduced to differentiate such 2-D interfacial phases from the conventional bulk phases defined by Gibbs [1,3,4,6,7].Phase diagrams are one of the most useful tools for materials engineering. Materials scientists have long recognized that phase-like behaviors at GBs can often control the fabrication processing, microstructural evolution, and materials properties [3,[6][7][8][9][10][11][12]. Thus, a potentially-transformative research is represented by the development of GB "phase" (a.k.a. complexion) diagrams as an extension to bulk phase diagrams and a generally-useful materials science tool. To support this goal, recent studies [9,10,13-16] have extended bulk CALPHAD (CALculation of PHAse Diagrams) methods to model coupled GB premelting and prewetting (a.k.a. the formation of nanoscale, impurity-based, quasi-liquid complexions) and subsequently constructed a class of "GB λ diagrams" to represent the thermodynamic tendency for general GBs to disorder at high temperatures. Although the predicted trends have been validated with direct high-resolution transmission electron microscopy (HRTEM) [9,[14][15][16][17][18][19] and proven useful for forecasting sintering behaviors [9,10,[13][14][15]20], these GB λ diagrams are not yet rigorous GB complexion diagrams with well-defined transition lines. An early report in 1999 [21] also constructed a GB complexion diagram for Cu-Bi via a rather simple model that considered GBs as "quasi-liquid layers" to explain the GB segregation behaviors measured by Auger electron spectroscopy (AES), but more recent aberration-corrected scanning transmission electron microscopy (AC STEM) observed an ordered bilayer complexion in Cu-Bi instead [22]. GB complexion diagrams with first-order transition lines and critical points have been constructed using diffuse-interface (phase-field) [1,23,24] and latticetype [16,[25][26]...

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Thermodynamic aspects of the grain boundary segregation in Cu(Bi) alloys

Cited by 107 publications

References 10 publications

Diffusion-Controlled Liquid Bismuth Induced Intergranular Embrittlement of Copper

Diffusion-Controlled Liquid Bismuth Induced Intergranular Embrittlement of Copper

The Segregation of Bi and S from a Cu(Bi,S) Ternary System

Calculation and validation of a grain boundary complexion diagram for Bi-doped Ni

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