Thermodynamic analysis of the sublimation process in cadmium selenide

Optimizing the growth procedures for CdSe crystal by thermal analysis techniques

“…It is easy to see that regardless of whether DT is 5 or 40 K, when the source temperature is lesser than 1113 K, the crystal growth rate is always equal to zero. This result agrees well with the reports in our previous TGA experiment [27], which found that the sublimation point of CdSe is about 1113 K. With the same DT, the crystal growth rate increases exponentially with temperature. In the crystal growth experiment, considering both CdSe poly-crystals will partially decompose near its melting point and the capacity of growth ampoule in high pressure and temperature for almost one month, the temperature of the source zone should be less than 1400 K.…”

Structural quality in single crystalline CdSe ingots grown by PVT

“…Thermal, mechanical and chemical stability are important properties of this semiconductor which additionally might not suffer from polarization under applied electric fields [6,7]. In order to obtain a good quality single crystalline material, it is necessary to optimize growth conditions, to advance in the knowledge and understanding involved in the mass transfer processes and in the diffusive and convective effects [8,9]. Detectors and optical devices quality of different semiconductors critically depend on the material characteristics [10].…”