1991 Help me understand this report
Thermodynamic analysis of the deposition of GaAs epitaxial layers prepared by the MOCVD method
Search citation statements
Paper Sections
Select...
1
Citation Types
0
1
0
Year Published
1995
2017
Publication Types
Select...
3
1
Relationship
0
4
Authors
Journals
Cited by 4 publications
(1 citation statement)
References 34 publications
0
1
0
“…This has been performed for the expanded set of reactions beyond Eqn (21.1) associated with GaAs formation [18][19][20]. In actuality, there are a wide number of possible reaction byproducts in this system at thermodynamic equilibrium.…”
Section: Thermochemical Aspects Of the Movpe Growth Processmentioning
confidence: 99%
“…This has been performed for the expanded set of reactions beyond Eqn (21.1) associated with GaAs formation [18][19][20]. In actuality, there are a wide number of possible reaction byproducts in this system at thermodynamic equilibrium.…”
Section: Thermochemical Aspects Of the Movpe Growth Processmentioning
confidence: 99%
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
