Thermodynamic analysis of SiC polytype growth by physical vapor transport method

Kakimoto, Koichi; Gao, Bing; Shiramomo, T.; Nakano, Satoshi; Nishizawa, S.

doi:10.1016/j.jcrysgro.2011.03.059

Cited by 26 publications

(24 citation statements)

References 15 publications

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“…For the hot zone design, the reduction of thermal stress in the growing crystal while maintaining overall growth conditions with reasonable growth rates is crucial. In order to evaluate the growth conditions in the crucible, numerical simulation is the tool of choice [5,6,7,8]. One problem for the modeling of the growth conditions of bulk SiC is the lack of precise material data at elevated temperatures [9].…”

Section: Introductionmentioning

confidence: 99%

Influence of Morphological Changes in a Source Material on the Growth Interface of 4H-SiC Single Crystals

et al. 2019

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In this study, the change of mass distribution in a source material is tracked using an in situ computer tomography (CT) setup during the bulk growth of 4H- silicon carbide (SiC) via physical vapor depostion (PVT). The changing properties of the source material due to recrystallization and densification are evaluated. Laser flash measurement showed that the thermal properties of different regions of the source material change significantly before and after the growth run. The Si-depleted area at the bottom of the crucible is thermally insulating, while the residual SiC source showed increased thermal conductivity compared to the initially charged powder. Ex situ CT measurements revealed a needle-like structure with elongated pores causing anisotropic behavior for the heat conductivity. Models to assess the thermal conductivity are applied in order to calculate the changes in the temperature field in the crucible and the changes in growth kinetics are discussed.

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Section: Introductionmentioning

confidence: 99%

Influence of Morphological Changes in a Source Material on the Growth Interface of 4H-SiC Single Crystals

et al. 2019

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“…Bulk density correspondingly increased to the maximum value, as mentioned in Figure 2, and the grain size was about 9–21 μm. When the fine powder content was increased to 60 wt.% (Figure 3D), a large amount of fine SiC particles decomposed and evaporated into gaseous products, which recrystallized dramatically on the coarse particles 26,27 . The transformation of equiaxed grains to hexagonal platelet grains, with a thickness of about 9–15 μm, was boosted, resulting in an interlaced and interconnected network structure.…”

Section: Resultsmentioning

confidence: 99%

Recrystallization sintering and characterization of composite powders composed of two types of SiC with dissimilar particle sizes

Huang

Sun

Wang

et al. 2022

Int J Applied Ceramic Tech

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Pure silicon carbide (SiC) ceramics were prepared through recrystallization sintering by using two types of SiC powder, with different particle sizes, as the raw materials. The effects of the fine powder content on the bulk density, porosity, flexural strength, and grain morphology were investigated. In the synthesis process, silicon nitride (Si3N4) was used as the sintering additive that decomposed and transformed into SiC to promote the growth of SiC grains. The added fine powder was exploited in the evaporation and condensation process and grain amalgamation caused by the movement of the grain boundaries. Thus, a dissimilar fine powder content modulated the microstructure and mechanical strength of the SiC ceramics. The results indicate that the bulk density and flexural strength increase to a maximum of 2.12 g/cm3, 44.2 MPa, respectively, when the fine powder content is 40 wt.%. Three kinds of grain morphologies, that is, uniform equiaxed grains, round, equiaxed grains, and hexagonal platelet grains, and the maximum average pore size (3.62 μm) are obtained when the fine powder content is between 0 wt.% and 60 wt.%. In addition, the main crystal phase 6H‐SiC is partially converted to 4H‐SiC when the fine powder content is up to 60 wt.%.

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“…The surface termination of the substrate strongly correlates with the grown polytype 5 . In addition, thermal effects 6,7,28,29 and the influence of the gas composition and supersaturation [30][31][32][33] have been studied. Sublimation growth experiments have shown that 3C occurs at low temperatures, and 4H and 6H are only observed at high temperatures 6,25,27,34 .…”

Section: Introductionmentioning

confidence: 99%

Effects of thermal, elastic, and surface properties on the stability of SiC polytypes

Ramakers,

Marusczyk,

Amsler

et al. 2022

Preprint

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Thermodynamic analysis of SiC polytype growth by physical vapor transport method

Cited by 26 publications

References 15 publications

Influence of Morphological Changes in a Source Material on the Growth Interface of 4H-SiC Single Crystals

Influence of Morphological Changes in a Source Material on the Growth Interface of 4H-SiC Single Crystals

Recrystallization sintering and characterization of composite powders composed of two types of SiC with dissimilar particle sizes

Effects of thermal, elastic, and surface properties on the stability of SiC polytypes

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