Thermodiffusion (thermomigration) and convection in molten semiconductor–metal layers

Eslamian, Morteza; Saghir, M. Ziad

doi:10.1016/j.ijthermalsci.2011.02.014

Cited by 22 publications

(12 citation statements)

References 37 publications

(17 reference statements)

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“…by Eslamian et al [10] during zone melting with aluminum as dopant. Unfortunately, a predictive theory for the thermodiffusion coefficient in liquids is still not available [11].…”

Section: Simulation Results and Critical Discussionmentioning

confidence: 99%

Modeling boron profiles in silicon after pulsed excimer laser annealing

Hackenberg

Huet²,

Negru³

et al. 2012

AIP Conference Proceedings

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Studies on atomic layer deposition Al2O3/In0.53Ga0.47As interface formation mechanism based on air-gap capacitance-voltage method Appl. Phys. Lett. 101, 122102 (2012) A mathematical model for void evolution in silicon by helium implantation and subsequent annealing process J. Appl. Phys. 112, 064302 (2012) Void evolution in silicon under inert and dry oxidizing ambient annealing and the role of a Si1−xGex epilayer cap J. Appl. Phys. 112, 054909 (2012) Additional information on AIP Conf. Proc. Abstract. In this work, we investigated four possible mechanisms which were candidates to explain the shape of boron profiles after ion implantation and melting excimer laser annealing in silicon. A laser with a wavelength of 308 nm and a pulse duration of ~180 ns was used. To simulate this process, an existing model for the temperature and phase evolution was complemented with equations for the migration of dopants. Outdiffusion, thermodiffusion, segregation, and adsorption were investigated as possible mechanisms. As a result, we found that outdiffusion and segregation can be excluded as major mechanisms. Thermodiffusion as well as adsorption could both reproduce the build-up at low melt depths, but only adsorption the one at deeper melt depths. In both cases, ion beam mixing during SIMS measurement had to be taken into account to reproduce the measured profiles.

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“…by Eslamian et al [10] during zone melting with aluminum as dopant. Unfortunately, a predictive theory for the thermodiffusion coefficient in liquids is still not available [11].…”

Section: Simulation Results and Critical Discussionmentioning

confidence: 99%

Modeling boron profiles in silicon after pulsed excimer laser annealing

Hackenberg

Huet²,

Negru³

et al. 2012

AIP Conference Proceedings

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show abstract

“…There is no tailored model or expression for the thermodiffusion factor in molten semiconductormetal mixtures. Recently, thermodiffusion and convection was studies by Eslamian and Saghir (2011) in a thin molten layer. They used Eq.…”

Section: Modeling Of Thermodiffusion In Molten Semiconductormetal MIXmentioning

confidence: 99%

“…In the analysis performed by Eslamian and Saghir (2011) the molten zone is assumed to be in stationary state to avoid a moving boundary problem and the thermodiffusion factor is obtained using Eq. 4.…”

Section: Modeling Of Thermodiffusion In Molten Semiconductormetal MIXmentioning

confidence: 99%

Advances in Thermodiffusion and Thermophoresis (Soret Effect) in Liquid Mixtures

Eslamian¹

2012

Frontiers in Heat and Mass Transfer

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Recent advances in thermodiffusion (Soret effect) in binary and higher multicomponent liquid mixtures are reviewed. The mixtures studied include the hydrocarbon, associating, molten metal and semiconductor, polymer, and DNA mixtures. The emphasis is placed on the theoretical works, particularly models based on the nonequilibrium thermodynamics, although other approaches such as the statistical, kinetic and hydrodynamic approaches are discussed as well. For each mixture, the major theoretical and experimental works are discussed and the research trends and challenges are addressed. Some of the challenges include a need for combining various methods to develop a comprehensive theoretical model or at least to try to understand the differences and pros and cons of each approach. Thermodiffusion and ordinary diffusion coefficients are scarce in some mixtures such as binary DNA, molten metal and metal-semiconductor mixtures and all ternary mixtures. Understanding of the molecular structure of associating mixtures, and modeling of thermodiffusion in such mixtures are also very challenging.

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“…We have shown that if the net heat of transport is properly simulated, the LNET approach can at least qualitatively predict the experimental data of various mixtures, from binary non-associating mixtures to complex mixtures such as molten metals and polymers and even ternary and quaternary mixtures [16][17][18][19][20]. Following the LNET, for a binary mixture, the thermodiffusion factor˛in the most general form is obtained as follows [16]:˛D…”

Section: Model Developmentmentioning

confidence: 99%

Modeling of DNA thermophoresis in dilute solutions using the non-equilibrium thermodynamics approach

Eslamian¹,

Saghir²

2012

Journal of Non-Equilibrium Thermodynamics

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Our previous approach on thermodiffusion modeling of dilute polymer solutions is extended to dilute DNA solutions. The model is based on linear non-equilibrium thermodynamics and the concept of Eyring's activation energy of viscous flow to estimate the Soret coefficient in thermophoresis of macromolecules that are not in liquid phase. The net heat of transport of single-and double-stranded DNA molecules, which are in solid state, are replaced by the activation energy of viscous flow of liquid alkanes with comparable molecular weights. The proposed formula is tested against available experimental data and qualitative agreement is observed. For double-stranded DNA molecules, the experimental data are scattered and the model can qualitatively predict the data, whereas for single-stranded DNA experiments in the infinite dilution model, for which the model is prescribed, a very good agreement is observed.

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Thermodiffusion (thermomigration) and convection in molten semiconductor–metal layers

Cited by 22 publications

References 37 publications

Modeling boron profiles in silicon after pulsed excimer laser annealing

Modeling boron profiles in silicon after pulsed excimer laser annealing

Advances in Thermodiffusion and Thermophoresis (Soret Effect) in Liquid Mixtures

Modeling of DNA thermophoresis in dilute solutions using the non-equilibrium thermodynamics approach

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