Thermo-Stimulation of Charges by Peltier Element for Trap Analysis in Polymer Layers

Aleksandrova, Mariya; Nikolov, Nikolay; Пандиев, И. М.

doi:10.1080/1023666x.2011.569170

Cited by 6 publications

(4 citation statements)

References 9 publications

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“…If thermoactivated devices have been recently studied [15,16], most of them were not silicon-based and cannot be integrated in a smooth way into the silicon microelectronics Journal of Sensors 3 [17,18], were not found relevant for nanotechnology applications. Additional studies of CMOS and MEMS based on SOI (Silicon-On-Insulator) wafers have been published [19][20][21][22][23][24][25][26].…”

Section: From Soipam To Soitam: Three Device Generations As Summarizmentioning

confidence: 99%

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Study of the Photo- and Thermoactivation Mechanisms in Nanoscale SOI Modulator

et al. 2017

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A new nanoscale silicon-based modulator has been investigated at different temperatures. In addition to these two advantages, nanoscale dimensions (versus MEMS temperature sensors) and integrated silicon-based material (versus polymers), the third novelty of such optoelectronic device is that it can be activated as a Silicon-On-Insulator Photoactivated Modulator (SOIPAM) or as a Silicon-On-Insulator Thermoactivated Modulator (SOITAM). In this work, static and time dependent temperature effects on the current have been investigated. The aim of the time dependent temperature simulation was to set a temporal pulse and to check, for given dimensions, how much time would it take for the temperature profile and for the change in the electrons’ concentration to come back to the steady state. Assuring that the thermal response is fast enough, the device can be operated as a modulator via thermal stimulation or, on the other hand, can be used as thermal sensor/imager. We present here the design, simulation, and model of the second generation which seems capable of speeding up the processing capabilities. This novel device can serve as a building block towards the development of optical/thermal data processing while breaking through the way to all optic processors based on silicon chips that are fabricated via typical microelectronics fabrication process.

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Section: From Soipam To Soitam: Three Device Generations As Summarizmentioning

confidence: 99%

“…Before proceeding to analyze the influence on the current, and thence to considerations of temperature, it is physically instructive to consider once again the perturbation to the substrate surface potential. Substituting (24) into (21) and into (16) gives, respectively,…”

Section: Modeling the Wavelength Dependence On Cstmentioning

confidence: 99%

Study of the Photo- and Thermoactivation Mechanisms in Nanoscale SOI Modulator

et al. 2017

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“…There are also several models, concerning determination of defect types (traps), according to their nature (structural defects or impurities) [7]. Among them thermally stimulated luminescence [8] and thermally activated current [9] are more popular.…”

Section: Introductionmentioning

confidence: 99%

Influence of the Temperature as an Environmental Factor on the Electrophysical Behavior of Flexible Polymeric Luminescent Devices

Aleksandrova

2014

Journal of Coatings

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The effect of operational temperature on the electrophysical properties of polymer based electroluminescent structures is examined. For this purpose thin film of light-emitting semiconductor polyphenylenevinylene derivative is deposited between two indium-tin oxide (ITO) electrodes. DC current-voltage (I-V) characteristics of the fabricated devices ITO/polyphenylenevinylene derivative PPV-D/ITO are measured at varying ambient temperatures, ranging from room temperature (25°C) to 70°C. Several important electrical parameters like a trap factor, traps activation energy distribution, free carriers’ density, trapped carriers density, and effective mobility are estimated from measured temperature dependentI-Vcurves. Such analysis of the charge transport process in polymer devices may give information needed for optimization of the existing structures.

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“…Additional investigations and simulations brought some breakthrough in this modulator, when it appears that thermal activation which could be related to the absorption of RF radiation, for instance, enables turning the device into a thermal sensor. Indeed, several types of material and size [14,15] of siliconbased/CMOS nanoscale thermal sensors become much more desirable for integration in microelectronics circuitry [16][17][18][19][20][21][22][23][24][25][26][27][28]. So, in our previous work [29] we presented a dualmode device: Silicon-On-Insulator Photo-Activated Modulator (SOIPAM) combined with Silicon-On-Insulator ThermoActivated Modulator (SOITAM).…”

Section: Introductionmentioning

confidence: 99%

Small Signals’ Study of Thermal Induced Current in Nanoscale SOI Sensor

Mandelbaum¹,

Gadasi²,

Chelly³

et al. 2017

Journal of Sensors

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A new nanoscale SOI dual-mode modulator is investigated as a function of optical and thermal activation modes. In order to accurately characterize the device specifications towards its future integration in microelectronics circuitry, current time variations are studied and compared for "large signal" constant temperature changes, as well as for "small signal" fluctuating temperature sources. An equivalent circuit model is presented to define the parameters which are assessed by numerical simulation. Assuring that the thermal response is fast enough, the device can be operated as a modulator via thermal stimulation or, on the other hand, can be used as thermal sensor/imager. We present here the design, simulation, and model of the next generation which seems capable of speeding up the processing capabilities. This novel device can serve as a building block towards the development of optical/thermal data processing while breaking through the way to all optic processors based on silicon chips that are fabricated via typical microelectronics fabrication process.

show abstract

Thermo-Stimulation of Charges by Peltier Element for Trap Analysis in Polymer Layers

Cited by 6 publications

References 9 publications

Study of the Photo- and Thermoactivation Mechanisms in Nanoscale SOI Modulator

Study of the Photo- and Thermoactivation Mechanisms in Nanoscale SOI Modulator

Influence of the Temperature as an Environmental Factor on the Electrophysical Behavior of Flexible Polymeric Luminescent Devices

Small Signals’ Study of Thermal Induced Current in Nanoscale SOI Sensor

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