Thermo-Mechanics of Integrated Circuits and Packages

Driel, W.D. van; Zhang, G. Q.; Fan, Xuejun

doi:10.1007/1-4020-4935-8_5

Cited by 6 publications

(6 citation statements)

References 56 publications

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“…As the interfacial properties are dependent on material properties such as adhesion strength, reactivity, and surface roughness, an accurate failure prediction of interfaces cannot be made unless these material properties are well considered . Molecular dynamics (MD) simulation serves as an excellent tool for the modeling of the interfacial properties at atomistic level , as it is able to account for the chemical interaction and bonding at the interface. With recent technological advancement, this tool is widely employed to investigate the failure mechanisms such as fracture and dislocations for a vast variety of materials .…”

Section: Introductionmentioning

confidence: 99%

Effects of temperature and voids on the interfacial fracture of Si/a‐Si₃N₄ bilayer systems

Lin

Babicheva

Xue

et al. 2015

Physica Status Solidi (b)

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This work studies the effects of temperature, voids at or near the interface on the interfacial fracture behavior, and mechanisms of the Si/a-Si 3 N 4 bilayer systems via molecular dynamics simulations. Under mode I loading, at 300 K, the interfacial strength of the bilayer system without voids is $22.5 GPa and it undergoes brittle fracture at the interface. However, at 600 K, failure occurs in the a-Si 3 N 4 layer in a ductile mode. With the existence of void in the Si layer, crack initiates at the void and propagates toward the interface when the temperature is 300 K. However, as temperature increases to 600 K, the defected bilayer system undergoes brittle fracture at the interface at a significantly lowered interfacial strength. With the presence of void at the interface, the bilayer system fractures at the interface with a deteriorated strength regardless of temperature. Under mode II loading, the Si/a-Si 3 N 4 system undergoes three deformation processes: elastic deformation, followed by plastic deformation in the a-Si 3 N 4 layer, and subsequently, interfacial sliding. The presence of voids at different locations and the increase in temperature lower the stresses required for interfacial sliding but do not have significant effect on the shear deformation processes. This study provides an insight to fracture behavior of Si/a-Si 3 N 4 system at certain operating conditions.

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Section: Introductionmentioning

confidence: 99%

Effects of temperature and voids on the interfacial fracture of Si/a‐Si₃N₄ bilayer systems

Lin

Babicheva

Xue

et al. 2015

Physica Status Solidi (b)

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“…Elles se produisent tout au long de la fabrication et de l'utilisation du composant, peuvent être critiques lors de l'assemblage du composant et peuvent éventuellement mettre en danger la durée de vie projetée. Il a été montré qu'environ 65% des défaillances sont liées à des effets thermomécaniques[54]. Les contraintes thermomécaniques provoquent souvent des fissures dans différentes parties du composant.…”

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Fast reliability qualification of SiP products

Regard

Gautier

Frémont

et al. 2009

Microelectronics Reliability

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NXP Semiconductor at Caen, which has System in Package (SiP) technologies development competences and NXP Semiconductor at Eindhoven, which has virtual qualification specialization jointed to study fast reliability qualification of SiP products. A thesis focused on simulations started at TU Delft University (Netherlands) with Xiaosong Ma directed by Kaspar Jansen and another thesis focused on experimentation started at Bordeaux 1 University with Charles Regard directed by Hélène Frémont. These thesis were lead on close collaboration. In a first time, the tests vehicles were defined by both the PhD students. Then materials characterizations and simulations were performed at TU Delft, and experimental qualification tests and physical analyses were performed in Caen. A long of these thesis, constant exchanges allowed to correlate simulations by experimentation. This industrial need of SiP product qualification study is due to the strong increase of functions integration into mobile equipments. Thus the SiP technology allows to provide in relative short time miniaturized products imposed by the new developments. This thesis work's goal is to get methods and techniques to optimize System in Package (SiP) reliability qualification.

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“…Most of challenges encountered in 3D ICs affect the thermomechanical reliability of the IC package, and thus it is one of the major concerns in the semiconductor industry. Currently, it is noted that 65% of the total failures in microelectronics are thermomechanical-related failure (Van Driel et al, 2006).…”

Section: Integrated Circuit Packagingmentioning

confidence: 99%

“…Mechanical failure usually occurs when the 3D IC device is subjected to conditions that resulted in stresses beyond the threshold of the mechanical properties of its constituent materials. Some common mechanical failure modes observed in 3D ICs are (Ohring, 1998): (Van Driel et al, 2006). Some examples of these failures include interfacial delamination and warpage induced by thermal cool down, resulting in silicon die crack and package cracking (Van Driel et al, 2003;Yang et al, 2007;Lu and Wong, 2009).…”

Section: Failure In Integrated Circuitsmentioning

confidence: 99%

“…MD simulation serves as an excellent tool for the modeling of the interfacial properties at the atomistic level (Wang et al, 2000;Fan et al, 2001;Tanaka and Goettler, 2002;Gou et al, 2004;Fan et al, 2006;Van Driel et al, 2006;Zhang et al, 2006;Fan et al, 2009;Fan and Yuen, 2010;Fan and Yuen, 2013), as it is able to account for the chemical interaction and bonding at the interface. With recent technological advancement, this tool is widely employed to investigate the failure mechanisms such as fracture and dislocations for a vast variety of materials (Abraham and Gao, 2000;Gerde and Marder, 2001).…”

Section: Interfacial Delaminationmentioning

confidence: 99%

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Failure analysis and characterization for microelectronic packaging

Lin¹

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In the recent years, the mechanical robustness and reliability of three-dimensional (3D) integrated circuit (IC) packaging have become tremendously challenging due to its continuous reduction in size and increase in vertical integration. Thermal problems such as the silicon (Si) substrate cracking and interfacial delamination are increasingly dominant due to the presence of high heat density in the small multilayer IC packaging. Furthermore, as the manufacturing and processing steps of the 3D ICs are significantly different from that of the conventional ICs, new defect and failure mechanisms that are unique to 3D ICs are not wellinvestigated. The reduction in size has also increased the sensitivity of the 3D ICs to microdefects that had not previously threatened their reliability and integrity. The increased complexity and miniaturization of 3D IC packaging and its consequential problems demand for new failure analysis methods. Therefore, this PhD research is proposed to study the physical failure modes and mechanisms associated with 3D ICs via molecular dynamics (MD) simulation and finite element method (FEM), and to develop new failure analysis methods for packaging characterization, thereby improving the packaging techniques and processes.Si is commonly used as a substrate material in the IC packaging but yet its fracture behavior theoretical framework is still not well-developed. Thus, studies are first carried out on Si to understand its fracture mechanism through MD simulation and experiment. As the mechanical properties of Si are strongly influenced by the crystallographic orientation, defects, grain boundary (GB) and temperature, their effects on the tensile properties and failure mechanisms of Si are investigated. The results show that when Si is subjected to tensile loading, it undergoes brittle fracture and its (111) plane is the most favorable cleavage plane due to its high atomic packing density, thus resulting in the highest stiffness and lowest

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Thermo-Mechanics of Integrated Circuits and Packages

Cited by 6 publications

References 56 publications

Effects of temperature and voids on the interfacial fracture of Si/a‐Si₃N₄ bilayer systems

Effects of temperature and voids on the interfacial fracture of Si/a‐Si₃N₄ bilayer systems

Fast reliability qualification of SiP products

Failure analysis and characterization for microelectronic packaging

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Thermo-Mechanics of Integrated Circuits and Packages

Cited by 6 publications

References 56 publications

Effects of temperature and voids on the interfacial fracture of Si/a‐Si3N4 bilayer systems

Effects of temperature and voids on the interfacial fracture of Si/a‐Si3N4 bilayer systems

Fast reliability qualification of SiP products

Failure analysis and characterization for microelectronic packaging

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Product

Resources

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Effects of temperature and voids on the interfacial fracture of Si/a‐Si₃N₄ bilayer systems

Effects of temperature and voids on the interfacial fracture of Si/a‐Si₃N₄ bilayer systems