2010
DOI: 10.1016/j.diamond.2009.09.002
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Thermionic electron emission from nitrogen-doped homoepitaxial diamond

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Cited by 37 publications
(24 citation statements)
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“…Several studies of H-terminated nitrogen-doped single-crystal diamond surfaces have shown thermionic emission with a work function of ≈2 eV. [261] The value is higher than anticipated, and has been attributed to the deep donor level for nitrogen (1.7 eV) and the presence of upward band bending. Studies of thermionic emission from polycrystalline n-and p-doped diamond have shown exceedingly low work functions of 1.4 and 0.9 eV, respectively.…”
Section: Vacuum Electronicsmentioning
confidence: 94%
“…Several studies of H-terminated nitrogen-doped single-crystal diamond surfaces have shown thermionic emission with a work function of ≈2 eV. [261] The value is higher than anticipated, and has been attributed to the deep donor level for nitrogen (1.7 eV) and the presence of upward band bending. Studies of thermionic emission from polycrystalline n-and p-doped diamond have shown exceedingly low work functions of 1.4 and 0.9 eV, respectively.…”
Section: Vacuum Electronicsmentioning
confidence: 94%
“…Some of the investigations based on thermionic emission from nitrogen doped homoepitaxial diamond [18], nano [19] and ultrananocrystalline diamond [20] films have resulted in observed work functions as low as 1.3 eV. In other instance, thermionic emission energy distribution (TEED) results on undoped diamond films have been shown to exhibit work function value of 3.3 eV [21].…”
mentioning
confidence: 96%
“…For single crystal diamond, it has been established that hydrogen-terminated surfaces display a NEA, and n-type character is obtained through doping with nitrogen or phosphorus (Figure 2) (van der Weide et al, 1994;Diederich et al, 1998;Kataoka et al, 2010). Nitrogen-and phosphorus-doped diamond exhibit deep donor levels at ~1.7 and 0.6 eV, respectively.…”
Section: Diamond and Wide-bandgap Semiconductorsmentioning
confidence: 99%