Thermally stimulated tunneling in rare-earth-doped oxyorthosilicates

Vedda, A.; Nikl, M.; Fasoli, M.; Mihóková, E.; Pejchal, Jan; Dušek, Michal; Ren, Guina; Stanek, Christopher R.; McClellan, K. J.; Byler, D.D.

doi:10.1103/physrevb.78.195123

Cited by 146 publications

(121 citation statements)

References 33 publications

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“…Another possible origin for variations in trap depths is the distance from the traps to the luminescent centers, as has been shown in, e.g., Lu x Y 2−x SiO 5 . 42 The presence of such a continuous trap distribution directly influences the shape of the TL glow peaks by broadening them, and can also explain the observed t −1 decay behavior of the afterglow, 31 although other authors suggest this behavior could be due to a trapping mechanism governed by tunneling. 43 In principle, these two explanations could be experimentally distinguished, since the t −1 behavior in the case of a continuous trap depth distribution is dependent on the temperature (at different temperatures greater or smaller parts of the distribution are filled), while tunneling is temperature independent.…”

Section: Continuous Trap Depth Distributionsmentioning

confidence: 99%

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Revealing trap depth distributions in persistent phosphors

et al. 2013

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Persistent luminescence or afterglow is caused by a gradual release of charge carriers from trapping centers. The energy needed to release these charge carriers is determined by the trap depths. Knowledge of these trap depths is therefore crucial in the understanding of the persistent luminescence mechanism. Unfortunately, the trap depths in persistent phosphors are often difficult to evaluate in an accurate and reliable way. The existing analysis methods are mostly based on single experiments, or they ignore the possibility of a continuous distribution of trap depths. We present a procedure to accurately probe the activation energies, even in the presence of a continuous distribution of energy levels. By performing a series of thermoluminescence experiments with varying excitation duration and at varying excitation temperature, and employing the initial rise analysis method, the depth and shape of such a distribution can be estimated. As an example, we investigated the trap system in the violet persistent phosphor CaAl 2 O 4 :Eu,Nd, and show that it consists of a Gaussian-shaped distribution of trap depths. The maximal density of traps lies in the region around 0.9 eV, but the distribution extends to 0.7 eV on the shallow side and 1.2 eV on the deep side. The described procedure can be used to obtain a clear view of the trap system in other persistent phosphors as well. This can lead to a better understanding of the nature of these trapping centers, and the role they play in the persistent luminescent mechanism.

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Section: Continuous Trap Depth Distributionsmentioning

confidence: 99%

“…As previously pointed out by various authors, the glow curves measured during a TL experiment should therefore be corrected for thermal quenching in order to represent the actual number of released charge carriers. 10,20,42 The thermal quenching profile for CaAl 2 O 4 :Eu,Nd is given in Fig. 7.…”

Section: Thermal Quenchingmentioning

confidence: 99%

Revealing trap depth distributions in persistent phosphors

et al. 2013

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“…To evaluate the characteristic parameters of the traps associated with TSL peaks an analogous procedure described above was applied. For quantitative analysis, however, the TSL glow curves above RT had to be corrected for the temperature quenching of the Ce 3+ recombination center, as was done, for example, in [14]. The details on the correction procedure are given below.…”

Section: Study Of the Trapping States By Tslmentioning

confidence: 99%

Trapping states and excited state ionization of the Ce3+ activator in the SrHfO3 host

Mihóková¹,

Jarý²,

Fasoli³

et al. 2013

Chemical Physics Letters

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a b s t r a c tWe study trapping states of Ce 3+ -doped SrHfO 3 by thermally stimulated luminescence in a wide temperature range (10-730 K). We determine characteristic parameters of the traps by the initial rise technique. We also determine the energy of thermal ionization of the excited state of Ce 3+ in SrHfO 3 host by purely optical method based on the study of UV illumination-induced thermoluminescence. The method provides a value of the thermal ionization energy of about 0.25 eV.

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“…The optical properties and luminescence mechanisms of this material have been studied extensively using various experimental methods, including emission, excitation and absorption spectra, 6−10 and thermally stimulated luminescence. 11 It is established that the observed optical spectra mainly come from 4f−5d electronic transitions of the dopant Ce…”

Section: Introductionmentioning

confidence: 99%