Thermally stimulated exoelectron emission from rare gas solids in weak external electric fields

Savchenko, E. V.; Grigorashchenko, O. N.; Ogurtsov, A. N.; Rudenkov, V. V.; Lorenz, Martin; Frankowski, Marcin; Smith-Gicklhorn, A. M.; Bondybey, V. E.

doi:10.1016/s0022-2313(01)00343-x

Cited by 10 publications

(8 citation statements)

References 23 publications

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“…2, the decay of the recombination luminescence can be described by (2) with a time t = g -1 , which characterizes the interaction cross section of photons and electrons. The sharp rise and exponential decay of the laser-induced intrinsic recombination luminescence observed in our experiment is quite similar to that measured in the experiments [10,11,14,16] on photon-stimulated exoelectron emission from nominally pure and doped solid Ar. Taking into account these findings and the results of our experiments, one can see two channels of relaxation processes in pre-irradiated solid Ar films.…”

Section: Resultssupporting

confidence: 88%

“…to reach the surface and escape the sample (as was observed in [10,11,14,16] for nominally pure and doped solid Ar); to recombine with positively charged intrinsic centers such as Ar 2 + .…”

Section: Resultsmentioning

confidence: 93%

“…In fact, the photons in the range 3·10 -2 eV can be used to release electrons from their traps and promote their passage to the conduction band. Note that the intense exoelectron emission from pre-irradiated solid Ar was observed under excitation by laser light of 2.76 eV energy [16]. When the electron starts to move through the lattice, there are at least two possibilities for further relaxation:…”

Section: Resultsmentioning

confidence: 99%

“…An interesting interconnection between atomic and electronic relaxation processes was found. It was suggested [16] and then demonstrated [10,11,14] that the thermally stimulated recombination of neutral guest oxygen atoms in the Ar matrix followed by O 2 * formation and radiative decay of the oxygen molecule resulted in the emission of exoelectrons from solid Ar. This posed a question on the influence of visible light on relaxation paths in atomic cryocrystals.…”

Section: Introductionmentioning

confidence: 99%

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Photon-stimulated recombination of self-trapped holes with electrons in pre-irradiated solid Ar

Gumenchuk

Bludov

Белов

2005

Low Temperature Physics

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Spatially separated stable charge centers -trapped electrons and self-trapped holes -are generated in Ar cryocrystals by a low-energy electron beam. A combination of the cathodoluminescence and photon-stimulated luminescence methods has been used to probe recombination reactions. Photon-stimulated vacuum ultraviolet intrinsic recombination luminescence from pre-irradiated solid Ar was detected for the first time. The 1.96 eV laser light has been demonstrated to release electrons from their traps that gives rise to the well-known M-band at 9.8 eV. Additional information on the photostability of charge centers at low temperatures has been obtained.

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Section: Resultssupporting

confidence: 88%

Section: Resultsmentioning

confidence: 93%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Photon-stimulated recombination of self-trapped holes with electrons in pre-irradiated solid Ar

Gumenchuk

Bludov

Белов

2005

Low Temperature Physics

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“…The latter studies showed a correlation in the yields of exoelectrons and VUV photons of the intrinsic recombination emission from pre-irradiated solid Ar. It was suggested [11] and then demonstrated [5,6,10] that thermally stimulated recombination of neutral guest O atoms in Ar matrix followed by O 2 * formation at 23 K and radiative decay of O 2 results in the emission of exoelectrons from solid Ar. It posed the question on the influence of visible light on the relaxation path in rare-gas solids (RGS).…”

mentioning

confidence: 99%

Photon‐stimulated charge recombination and exoelectron emission from pre‐irradiated solid Ar

Gumenchuk¹,

Bludov²,

Белов³

et al. 2007

Phys. Status Solidi (c)

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Spatially separated stable charge centers -self-trapped holes, trapped electrons, dopant ionic centers and radicals were generated in an Ar matrix doped with Xe and N 2 by a low energy electron beam. A combination of the cathodoluminescence (CL) with the photon-stimulated luminescence (PSL) and photonstimulated exoelectron emission (PSEE) methods was used to monitor center formation and selected relaxation channels -charge recombination reactions and exoelectron emission. PSEE from pre-irradiated Ar samples was registered simultaneously with N line emission. Vacuum ultraviolet (VUV) intrinsic and extrinsic recombination luminescence from pre-irradiated samples has been detected to confirm the suggested relaxation path of the stored energy. An afterglow of the N line can be considered as an internal source of photons which releases electrons from the traps and being a triggering mechanism of relaxation processes: (i) -exoelectron emission, (ii) -radiative recombination of charge species. 1 Introduction An exposure of solid insulators to ionizing radiation results in generation of metastable centers such as self-trapped/trapped charge carriers and structural defects. Spatially separated charge carriers remain stable at low temperatures after completing irradiation. Relaxation processes can be stimulated by heating or by photon flux. In our study we focused on the photon-stimulated relaxation.Methods of activation spectroscopy are especially powerful tools for the investigation of a relaxation in solids and the method of thermally stimulated luminescence (TSL) is the most common in use [1][2][3][4][5][6][7]. Recent experiments revealed thermally stimulated exoelectron emission (TSEE) from solid Ne [8] and Ar [9,10]. The latter studies showed a correlation in the yields of exoelectrons and VUV photons of the intrinsic recombination emission from pre-irradiated solid Ar. It was suggested [11] and then demonstrated [5,6,10] that thermally stimulated recombination of neutral guest O atoms in Ar matrix followed by O 2 * formation at 23 K and radiative decay of O 2 results in the emission of exoelectrons from solid Ar. It posed the question on the influence of visible light on the relaxation path in rare-gas solids (RGS).Relaxation processes in RGS are still not clearly understood. There are only a few publications dedicated to PSEE [5,10,12] and to the intrinsic VUV recombination luminescence caused by an external photon source [13].We present new results -relaxation channels involving photon-stimulated radiative recombination (intrinsic and extrinsic) of charge centers with electrons in VUV range and corresponding PSEE.

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Electronic and atomic relaxation processes in irradiated cryocrystals

Savchenko

Bondybey

2005

Physica Status Solidi (a)

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Relaxation processes and stability of charge centers in preirradiated cryocrystals doped with atomic and molecular species are discussed. The study was performed combining techniques of spectrally resolved thermally stimulated luminescence (TSL), thermally stimulated exoelectron emission (TSEE) and photonstimulated exoelectron emission (PSEE). Comparison of the yields of electrons and photons in VUV and visible ranges made it possible to discriminate between reactions of charge carriers and neutral reactive species and find interconnection between atomic and electronic processes of relaxation. The radiative mechanism of electronic relaxation stimulation via an atomic subsystem is verified.

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Thermally stimulated exoelectron emission from rare gas solids in weak external electric fields

Cited by 10 publications

References 23 publications

Photon-stimulated recombination of self-trapped holes with electrons in pre-irradiated solid Ar

Photon-stimulated recombination of self-trapped holes with electrons in pre-irradiated solid Ar

Photon‐stimulated charge recombination and exoelectron emission from pre‐irradiated solid Ar

Electronic and atomic relaxation processes in irradiated cryocrystals

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