Thermally stimulated dislocation generation in silicon crystals grown by the Float-Zone method

Rost, H.-J.; Buchovska, Iryna; Dadzis, K.; Juda, U.; Renner, Mark W.; Menzel, Robert

doi:10.1016/j.jcrysgro.2020.125842

Cited by 9 publications

(14 citation statements)

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“…For FZ growth, an inert gas or vacuum environment is used, and surface tension of the silicon allows the translation of a melt zone vertically along the length of a high purity rod. For RF induction heated furnaces, convection is reduced, magnetic forces stabilise the melt and temperature gradients 34 – 36 can be tens of K cm −1 . The stability of the melt zone limits the diameters that can be grown as well as the uniformity of the cross-section.…”

Section: History and Backgroundmentioning

confidence: 99%

Semiconductor core fibres: materials science in a bottle

2021

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Novel core fibers have a wide range of applications in optics, as sources, detectors and nonlinear response media. Optoelectronic, and even electronic device applications are now possible, due to the introduction of methods for drawing fibres with a semiconductor core. This review examines progress in the development of glass-clad, crystalline core fibres, with an emphasis on semiconducting cores. The underlying materials science and the importance of post-processing techniques for recrystallization and purification are examined, with achievements and future prospects tied to the phase diagrams of the core materials.

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Section: History and Backgroundmentioning

confidence: 99%

Semiconductor core fibres: materials science in a bottle

2021

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“…While 3D simulations are possible, a 2D (axisymmetric) model was employed in the present work to save computational resources. Another two reasons that justify the use of a 2D model is that (i) anisotropic material properties (elastic constants) have a weak influence on the results [13] and (ii) no clear deviation from axial symmetry in characterisation results was observed in the experiment [18]. The global heat transfer was not considered in the present study since only the temperature field in the crystal was of interest.…”

Section: Description Of Experimentsmentioning

confidence: 99%

“…The experimental setup and obtained results are described in [18]; therefore, only a brief summary relevant for the numerical modelling is given in this section.…”

Section: Description Of Experimentsmentioning

confidence: 99%

“…To better understand the origins of dislocation generation, an experiment by Rost et al [18] related to the modified FZ process [2,3] was carried out. An as-grown FZ Si single crystal was heated by a high-frequency (HF) coil in a controlled manner up to different temperatures, depending on the position.…”

Section: Introductionmentioning

confidence: 99%

“…In the present study, the experiment [18] was analysed numerically using a new implementation of the AH model with the goal of validating the applicability for dislocation dynamics in FZ Si. A simplified volume distribution of the electromagnetic (EM) field from calculated surface values using the HF approach was introduced since the crystal diameter is comparable to the EM skin depth.…”

Section: Introductionmentioning

confidence: 99%

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Application of the Alexander–Haasen Model for Thermally Stimulated Dislocation Generation in FZ Silicon Crystals

et al. 2022

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Numerical simulations of the transient temperature field and dislocation density distribution for a recently published silicon crystal heating experiment were carried out. Low- and high-frequency modelling approaches for heat induction were introduced and shown to yield similar results. The calculated temperature field was in very good agreement with the experiment. To better explain the experimentally observed dislocation distribution, the Alexander–Haasen model was extended with a critical stress threshold below which no dislocation multiplication occurs. The results are compared with the experiment, and some remaining shortcomings in the model are discussed.

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