Thermally stimulated current in high resistivity Cd0.85Mn0.15Te doped with indium

Abstract

Charge carrier traps in Cd 0.85 Mn 0.15 Te doped with indium were studied using thermally stimulated current measurements. The investigations were performed in temperatures ranging from 100 to 300 K. Four peaks in the current spectrum were identified. From the initial rise method and the best fit of the spectrum to the theoretical model, the activation energies and the relaxation parameters for the corresponding traps were determined.

Estimation of thermally stimulated current in as grown TlGaSeS layered single crystals by multilayered perceptron neural network

“…Thus, it is very useful to get detailed information on energetic and kinetic parameters of trapping centers (hole traps in the present paper) in semiconductor in order to obtain high quality devices. Among the several experimental methods for determining the properties of trap centers in semiconductors, TSC measurements are relatively easy to perform and provide detailed information on trap states (Borchi, Bruzzi, Pirollo, & Sciortino, 1998;Chen & Kirsh, 1981;Fang, Claflin, & Look, 2008;Kitis, Chen, & Pagonis, 2008;Schafferhans, Baumann, Deibel, & Dyakonov, 2008;Schmechel & von Seggern, 2004;Skorikov, Chmyrev, Zuev, & Larina, 2002;Wrobel, Gubań ski, Płaczek-Popko, Rezmer, & Becla, 2008;Yıldırım & Gasanly, 2009). …”

Low temperature thermally stimulated current measurements in N-implanted TlGaSeS layered single crystals

“…In the case of electronic devices, defects introduce scattering centers lowering carrier mobility, hence hindering high-frequency operation. Among the several experimental methods for determining the properties of trap centers in semiconductors, TSC measurements are relatively easy to perform and provide detailed information on trap states [12][13][14][15][16][17][18][19]. In TSC experiments, traps are filled by band-to-band excitation of carriers at low temperatures using a suitable light source.…”

Computational modeling of isothermal decay curves of trapping centers in TlGaSeS layered single crystals

“…Thus, it is very useful to get detailed information on energetic and kinetic parameters of trapping centers (hole traps in the present paper) in semiconductor in order to obtain high quality devices. Among the several experimental methods for determining the properties of trap centers in semiconductors, thermally stimulated current (TSC) measurements are relatively easy to perform and provide detailed information on trap states [11][12][13][14][15][16][17][18][19].…”