Thermally Stable NiSi₂ for Ge Contact with Schottky Barrier Height Modulation Capability

Abstract

Agglomeration resistant contact of NiSi2 with Ge substrates has been performed using stacked silicidation process. Stable Schottky barrier height at NiSi2/Ge interface with ideality factor of less than 1.2 can be maintained up to annealing temperature of 500 oC. Incorporation of P atom at NiSi2/Ge interface modulates the Schottky barrier height to produce Ohmic contact.