2021
DOI: 10.1016/j.materresbull.2020.111147
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Thermally stable, low resistance Mg2Si0.4Sn0.6/Cu thermoelectric contacts using SS 304 interlayer by one step sintering

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Cited by 15 publications
(18 citation statements)
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“…Table shows the processing techniques and temperatures used in the literature to fabricate n-type Mg 2 (Si,Sn) with contacts. It has been reported that in n-type Mg 2 (Si,Sn) TE element fabrication, the material synthesis was carried out first and then separate contact fabrication processes were performed separately. ,,, In addition, the contact layer oxidation and removal process are inevitable due to two different processing sequences, adding additional manufacturing costs for device fabrication.…”
Section: Resultsmentioning
confidence: 99%
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“…Table shows the processing techniques and temperatures used in the literature to fabricate n-type Mg 2 (Si,Sn) with contacts. It has been reported that in n-type Mg 2 (Si,Sn) TE element fabrication, the material synthesis was carried out first and then separate contact fabrication processes were performed separately. ,,, In addition, the contact layer oxidation and removal process are inevitable due to two different processing sequences, adding additional manufacturing costs for device fabrication.…”
Section: Resultsmentioning
confidence: 99%
“…The integration of low-cost Mg 2 Si 1– x Sn x materials in TEGs is mainly restricted by one of the leading issues, the electrical contact resistance between thermoelectric elements and contact electrodes. Several published works on Mg 2 Si 1– x Sn x focused on enhanced thermoelectric properties; ,,,,, however, the development of a suitable contact/electrode material and its joining process is minimal. , …”
Section: Introductionmentioning
confidence: 99%
“…In the present work, contact resistances as low as ~43–59 mΩ.mm 2 were obtained in tetrahedrite legs/copper junctions. These values are close to the range reported for commercial TE devices (typically from 0.075 to 3.7 mΩ.mm 2 ) [ 51 , 52 , 53 ] and to other TE materials currently being studied, such as the skutterudites (~10–12 mΩ.mm 2 ) [ 54 ], the CoSb 3 compounds (~ 15 mΩ.mm 2 ) [ 55 ], and the Mg 2 (Si,Sn) legs (~1–20 mΩ.mm 2 ) [ 56 , 57 ].…”
Section: Computer Simulationsmentioning
confidence: 99%
“…During fabrication or subsequent operation at elevated temperatures, the contamination of the TE material by elements from electrodes could alter its properties. This process, referred to as “poisoning”, is a major problem in direct TE material-electrode contacts, particularly for medium and high-temperature applications. ,, The stress developed at the contacts due to the thermal expansion coefficient (CTE) mismatch is another critical issue in TE devices. An appropriate choice of electrode material and contact design is thus crucial to overcome this problem.…”
Section: Introductionmentioning
confidence: 99%