Thermally induced spin-dependent current based on Zigzag Germanene Nanoribbons

Majidi, Danial; Faez, Rahim

doi:10.1016/j.physe.2016.09.017

Cited by 7 publications

(1 citation statement)

References 35 publications

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“…After that, various studies have been reported concerning the SDSE in one-dimensional nanoribbons with armchair or zigzag edges, such as graphene, silicene, black phosphorus and germanene nanoribbons (8)(9)(10). For example, Majidi et al (11) demonstrated that spin-up and spin-down currents flow in reverse orientations with two various threshold temperatures in hydrogen-terminated zigzag-edge germanene nanoribbons with a temperature difference among the source and the drain. Zheng et al (12) found electric fields to improve spin thermoelectric efficiency of germanene nanoribbon.…”

Section: Introductionmentioning

confidence: 99%

The Magnetic and Thermally-Induced Spin-Related Transport Features Using Germanene Nanoribbons With Zigzag and Klein Edges

Tan

Ren

2022

Front. Phys.

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The current work employs the first-principles computations and non-equilibrium Greens function to investigate the magnetic and thermally-induced spin-related transport features using germanene nanoribbons with zigzag and Klein edges (ZKGeNRs). It was demonstrated that the ZKGeNRs with various widths (N) are placed in various spin-resolved electronic states. By increasing the width parameter N from 4 to 9, the ZKGeNRs moves from an indirect-gap bipolar magnetic semiconducting state (BMS) to bipolar spin gapless semiconductor (BSGS), and finally to ferromagnetic metal (FM). Moreover, since the right and the left temperatures of the ZKGeNRs device are different, the spin-up and spin-down currents flow in reverse orientations, demonstrating the spin-dependent Seebeck effect (SDSE). Besides, the threshold temperature decreases as N increases and then disappears, while the spin currents increase as N increases. Simulation results indicated that the ZKGeNRs could be an appropriate choice for spin caloritronic devices and could be utilized in future low-power consumption applications.

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