Thermally-driven H interaction with HfO2 films deposited on Ge(100) and Si(100)

Abstract

In the present work, we investigated the thermally-driven H incorporation in HfO2 films deposited on Si and Ge substrates. Two regimes for deuterium (D) uptake were identified, attributed to D bonded near the HfO2/substrate interface region (at 300 °C) and through the whole HfO2 layer (400–600 °C). Films deposited on Si presented higher D amounts for all investigated temperatures, as well as, a higher resistance for D desorption. Moreover, HfO2 films underwent structural changes during annealings, influencing D incorporation. The semiconductor substrate plays a key role in this process.

Oxygen Transport and Incorporation in Pt/HfO2 Stacks Deposited on Germanium and Silicon

“…The main difference for Ge and Si substrates is that no epitaxial crystallization was observed on Si. Soares et al also observed crystallization of HfO 2 during thermal annealings, further evidencing the influence of the annealing atmosphere. In the present work, we performed grazing incidence X-ray diffraction (GIXRD) aiming at indentifying HfO 2 crystallization (results not shown).…”