Thermalization and recombination in amorphous semiconductors

Orenstein, J.; Kastner, M. A.

doi:10.1016/0038-1098(81)90717-1

Cited by 162 publications

(49 citation statements)

References 10 publications

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“…In aSi:H, the recombination at photocarrier densities exceeding 5× 10 18 cm − 3 the bimolecular recombination is the major mechanism of recombination of photoexcited carriers. The values of relevant coefficient B reported range between 7× 10 − 10 [15] and 7×10 − 9 cm 3 s − 1 [16]. On the basis of femtosecond measurements an even higher value of this constant was found [10].…”

Section: Resultsmentioning

confidence: 87%

Ultrafast carrier dynamics in undoped microcrystalline silicon

Kudrna

Malý

Trojánek

et al. 2000

Materials Science and Engineering: B

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We have studied ultrafast dynamics of photoexcited carriers in mc-Si:H by pump and probe laser spectroscopy. We have found that the dynamics of photoexcited carriers in mc-Si:H depend on the crystallinity of the material: in the samples with low crystalline fraction, the dynamics have a fast decay and resemble those in a-Si:H, while in the samples with high crystallinity the dynamics are slower and similar to those in c-Si. We have identified an intensity dependent bimolecular recombination in the samples with lower crystalline fraction (coefficient B = 2× 10 − 10 cm 3 s − 1 for deposition with silane dilution ratio :5% at a fixed power of 6 W), and no bimolecular recombination in the samples with high crystallinity.

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Section: Resultsmentioning

confidence: 87%

Ultrafast carrier dynamics in undoped microcrystalline silicon

Kudrna

Malý

Trojánek

et al. 2000

Materials Science and Engineering: B

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“…The kink at about 2.6 eV is due to the increased thermalization rate by a thermally activated multi step process including transport via a localized defect level [10]. At higher energies, about 3 eV, the PL bends down and gives rise to a third PL regime which extends right to the band edge, and is dominated by the increased hopping-up (MT to E V ) limited thermalization rate [9].…”

Section: Steady State Pl Spectramentioning

confidence: 97%

“…They accumulate then in deeper states, which have slower leaving rates and still contain all carriers that have hopped into them. The energy separating fast and slow times is the demarcation energy E d defined by [9]:…”

Section: Pl Transientsmentioning

confidence: 99%

Thermalization and recombination in exponential band tail states

Niehus

Schwarz²

2006

Phys. Status Solidi (c)

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We present an analytical model that combines the complementary experimental evidence of spatial dispersion (DAP recombination) and energetic dispersion (band tails). The model describes the competition between thermalization and recombination of excess carriers trapped in exponentially distributed (in energy), discrete localized (in space) states. We use the energy dependence of the relaxation rates to derive the energy and time dependence of sub gap photoluminescence. The model predicts that the yellow luminescence band (YLB) and blue luminescence band (BLB) commonly observed in GaN are not separate entities, but reflect the competition of thermalization and recombination. A distinct kink is observed in transient PL in the microsecond range, in the limiting cases of strong tailing and/or low temperatures, indicating the transition from thermalization-limited to (radiative) recombination-limited excess carrier relaxation. Both prediction are in line with experiment, and able to resolve interpretational difficulties.

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“…In the latter case, the exciton can be either recaptured by a radiative localized state in the band-tail, or it can reach one of the comparatively rare non-radiative centers. It is assumed that non-radiative recombination takes place predominantly when an exciton gets captured by such an nonradiative center [13]. Herewith the hopping between radiative localized states is neglected as justified recently in Ref.…”

Section: Experimental Observationsmentioning

confidence: 99%

Two‐energy‐scale model for description of the thermal quenching of photoluminescence in disordered Ga(As,Bi)

Shakfa

Wiemer

Ludewig

et al. 2015

Phys. Status Solidi C

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The thermal quenching of the photoluminescence (PL) intensity in Ga(As,Bi)/GaAs heterostructures is studied experimentally and theoretically. We observed an anomalous plateau in the PL thermal quenching at intermediate temperatures under low excitation conditions. Our theoretical analysis based on a well‐approved theoretical approach shows that this peculiar behavior of the temperature‐dependent PL intensity cannot be interpreted assuming a single‐scale monotonously energy‐dependent density of localized states (DOS). Experimental data clearly point at a non‐monotonous DOS with at least two energy scales. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Thermalization and recombination in amorphous semiconductors

Cited by 162 publications

References 10 publications

Ultrafast carrier dynamics in undoped microcrystalline silicon

Ultrafast carrier dynamics in undoped microcrystalline silicon

Thermalization and recombination in exponential band tail states

Two‐energy‐scale model for description of the thermal quenching of photoluminescence in disordered Ga(As,Bi)

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