Thermal transport in free-standing semiconductor fine wires

Potts, A; Kelly, Michael J.; Hasko, D. G.; Smith, Charles G.; Cleaver, J. R. A.; Ahmed, H.; Peacock, D. C.; Frost, J. E. F.; Ritchie, D. A.; Jones, G. A. C.; Singleton, John; Janssen, T. J. B. M.

doi:10.1016/0749-6036(91)90250-u

Cited by 19 publications

(5 citation statements)

References 8 publications

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“…Narayanamurti et al (1979) demonstrated interference effect of monochromatic phonons in a superlattice structure. One measurement of the thermal conductivity of GaAs fine wires suggests that the electron contribution to thermal conductivity is dominant at low temperatures (Potts et al, 1991). These few existing data are far from enough to test any theory.…”

Section: Applications Of Microscale Heat Transfermentioning

confidence: 98%

Challenges in Microscale Conductive and Radiative Heat Transfer

Tien

Chen

1994

Journal of Heat Transfer

143

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This work addresses challenges in the emerging field of microlength scale radiative and conductive heat transfer in solids and recommends specific directions of future research. Microlength scale heat transfer involves thermal energy transport processes in which heat carrier characteristic lengths become comparable to each other or the characteristic device dimension. Identification of these characteristic lengths leads to the definition of different microscale heat transfer regimes. A review of the theoretical bases describing heat transfer in each regime is followed by a discussion of the obstacles confronted in current research. Engineering challenges are illustrated with the applications of microscale heat transfer in cryogenic systems, material processing, and electronic, optical, and optoelectronic devices. The experimental difficulties discussed have hampered the development of microscale heat transfer research and deserve great efforts to overcome them.

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Section: Applications Of Microscale Heat Transfermentioning

confidence: 98%

Challenges in Microscale Conductive and Radiative Heat Transfer

Tien

Chen

1994

Journal of Heat Transfer

143

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“…In a companion paper to this [16] self-heating experiments have been performed on the free-standing wires of sample No 14c (similar to those undertaken by Smith and coworkers [22,23] on free-standing AuPd wires) in order to determine the temperature dependence of the thermal conductivity K( T ) . The electron temperature in the wires was calibrated using the one-dimensional electrical conductivity G( T ) of equation (1) (figure 2).…”

Section: Summary and Implicationsmentioning

confidence: 99%

“…In a companion paper [16] we have exploited the free-standing geometry of sample No 14c in order to undertake a study of thermal transport processes in low-dimensional systems, This study has demonstrated the importance of heat transfer by electrons as opposed to phonons.…”

Section: Introductionmentioning

confidence: 99%

Quantum conductivity corrections in free-standing and supported n⁺-GaAs wires

Potts¹,

Hasko²,

Cleaver³

et al. 1990

J. Phys.: Condens. Matter

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Low-temperature electrical and magnetoresistance measurements have been performed on free-standing and supported wires of n-type GaAs doped to 10" ~1 1 7 ~~ over the temperature range 0.47-4.2 K. These wires were triangular in cross-section, with widths of 600-900 nm and lengths of 3.2-10 pm. We report that the observedincrease in the resistance for temperatures below 4.2 K can be interpreted as being due to a combination of weak localisation of 3D electron-electron interaction effects. We will also show how the results described here can be used as the basis for a determination of the phonon conductivity and dimensionality in free-standing structures.

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“…Apart from applications as nanomechanical resonators, the disconnection from the bulk material offers the possibility to study thermal transport and the influence of phonons on the electronic properties of suspended low-dimensional semiconductor structures, as was investigated in early work by Kelly [5]. Since the structure is thermally decoupled from the environment, the influence of thermally activated phonons is minimized [6,7]. Therefore, the application for sensitive cryogenic bolometers is especially obvious [8].…”

mentioning

confidence: 99%

“…For these, the ratio between the surface and volume of the suspended wire becomes extremely large. Therefore, possible surface effects such as irradiation damage induced during dry etching, surface traps and electron scattering due to surface roughness become important and have to be taken into account [7].…”

mentioning

confidence: 99%

Suspending highly doped silicon-on-insulator wires for applications in nanomechanics

Pescini¹,

Tilke²,

Blick³

et al. 1999

Nanotechnology

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We report on a new method to build suspended silicon nanowires in highly doped silicon films in silicon-on-insulator substrates. The beams are defined by high-resolution, low-energy electron-beam lithography using a two-layer positive electron resist. Micromachining techniques including dry and wet etching are applied to pattern the structures. We show first low-temperature measurements of these novel devices indicating electron-phonon interaction.

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Thermal transport in free-standing semiconductor fine wires

Cited by 19 publications

References 8 publications

Challenges in Microscale Conductive and Radiative Heat Transfer

Challenges in Microscale Conductive and Radiative Heat Transfer

Quantum conductivity corrections in free-standing and supported n⁺-GaAs wires

Suspending highly doped silicon-on-insulator wires for applications in nanomechanics

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Thermal transport in free-standing semiconductor fine wires

Cited by 19 publications

References 8 publications

Challenges in Microscale Conductive and Radiative Heat Transfer

Challenges in Microscale Conductive and Radiative Heat Transfer

Quantum conductivity corrections in free-standing and supported n+-GaAs wires

Suspending highly doped silicon-on-insulator wires for applications in nanomechanics

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Product

Resources

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Quantum conductivity corrections in free-standing and supported n⁺-GaAs wires