Thermal Stress Considerations in Die-Attachment

Matijasevic, G.; Wang, Chen Yu; Lee, Chin C.

doi:10.1007/978-1-4684-7767-2_6

Cited by 8 publications

(5 citation statements)

References 44 publications

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“…Reliable die bonding requires a low void density and a controlled thickness of the bonding layers. To fulfil this requirement, highly uniform solder materials and surfaces are used [46]. Many solder alloys are available, each requiring the process to be tuned for the specific solder/substrate material combination.…”

Section: Process Considerationsmentioning

confidence: 99%

Microelectronic Bonding Processes Monitored by Integrated Sensors

Mayer¹,

Schwizer

2002

Sensors Update

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Real-time monitoring methods are beneficial for the control, optimization, and failure analysis of microelectronic packaging processes. The focus of this chapter is on the real-time monitoring of two widely used processes, soft solder die bonding and thermosonic ball bonding. The methods presented here use uniquely developed microsensors integrated on custom-made test chips using commercial double-metal CMOS processes.For the soft solder die bonding process, nine aluminum-based resistive temperature detectors were integrated on various locations on a test chip. The temperature was monitored during the placement of the test chip on the leadframe. The experimental results describe the wetting and spreading effects of the molten solder under the drip. Together with numerical results obtained with a transient thermal finite element model, the beginning of wetting can be quantified. For the soft solder PbSn10, wetting occurred around 30 ms after touch down. This method hence can be used to determine wetting times under different process conditions. The wetting time determines an upper limit of the throughput of the process.For the thermosonic ball bonding process, temperature and force sensors were integrated on test chips. The sensors are aluminum resistors and piezoresistive p + -and n + -diffused resistors placed around bond pads. A bond quality parameter can be derived from the temperature signal variation during bonding. The piezoresistive sensors permit the measurement of forces in the x-, y-, and z-directions simultaneously. The ultrasonic tangential force signal reached a typical value of 0.12 N on a 50 lm diameter contact zone and revealed significant process characteristics. Four process phases are identified which are necessary for a successful ball bond formation. These phases are assigned to initial stiction, sliding, bond growth, and deformation effects.

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Section: Process Considerationsmentioning

confidence: 99%

Microelectronic Bonding Processes Monitored by Integrated Sensors

Mayer¹,

Schwizer

2002

Sensors Update

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“…Moreover, the characteristic of self-alignment and the ability to rework of Pb-Sn solder system allows a wide variety of applications in the flip-chip process. However, one of the notable drawbacks is the intermetallic formed in the bonding interface can easily cause brittle fracture and failure and can also cause thermal, electrical, and mechanical problems in the joint [1]. The addition of flux is also undesirable.…”

Section: Introductionmentioning

confidence: 99%

Low Temperature TSV Interconnection with Ultra-thin Ag Nano-twinned Films Sputtered on Si Wafers for 3D-IC Advanced Packages

Chen,

Chuang

2023

IJMMME

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Nanotwinned structure has been attracting a great deal of attention due to their excellent mechanical and electrical properties. In this study, ultra-thin nanotwinned Ag films can be fabricated by DC magnetron sputtering with moderate substrate bias. Within these nanotwinned films, only 100-400 nm thick equiaxed-grin transition layer was formed between the nanotwinned region and Si substrate observed by Focused ion Beam (FIB). For the analysis of nanotwinned films, the asdeposited films are shown to have a strong (111) preferred orientation. The roughness of the films was observed below 10 nm, which was smooth enough and acceptable for metal direct bonding. Ag-to-Ag direct bonding was then performed to satisfy the requirement of TSV interconnections. The ultra-thin nanotwinned Ag films with (111) preferred orientation will have many potential applications in interconnects and 3D IC packaging.

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“…CTE mismatch is amplified by thermal shock and cycling during soldering [217]. Matijasevic et al [218] described the resulting mechanisms of thermal expansion induced stress within a typical die-die attach-paddle structure, which can overcome the adhesive bond between the die and paddle, thereby resulting in delamination.…”

Section: Component Structural Analysismentioning

confidence: 99%

An Experimental Assessment of Computational Fluid Dynamics Predictive Accuracy for Electronic Component Operational Temperature

Eveloy¹,

Rodgers²,

Hashmi

2003

Heat Transfer: Volume 3

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The flow modeling approaches employed in Computational Fluid Dynamics (CFD) codes dedicated to the thermal analysis of electronic equipment are generally not specific for the analysis of forced airflows over populated Printed Circuit Boards. This limitation has been previously highlighted [1], with component junction temperature prediction errors of up to 35% reported. This study evaluates the predictive capability of candidate turbulence models more suited to the analysis of electronic component heat transfer. Significant improvements in component junction temperature prediction accuracy are obtained, relative to a standard high-Reynolds number k-e model, which are attributed to better prediction of both board leading edge heat transfer and component thermal interaction. Such improvements would enable parametric analysis of product thermal performance to be undertaken with greater confidence in the thermal design process, and the generation of more accurate temperature boundary conditions for use in Physics-of-Failure based reliability prediction methods. The case is made for vendors of CFD codes dedicated to the thermal analysis of electronics to consider the adoption of eddy viscosity turbulence models more suited to board-level analysis.

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Thermal Stress Considerations in Die-Attachment

Cited by 8 publications

References 44 publications

Microelectronic Bonding Processes Monitored by Integrated Sensors

Microelectronic Bonding Processes Monitored by Integrated Sensors

Low Temperature TSV Interconnection with Ultra-thin Ag Nano-twinned Films Sputtered on Si Wafers for 3D-IC Advanced Packages

An Experimental Assessment of Computational Fluid Dynamics Predictive Accuracy for Electronic Component Operational Temperature

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