Thermal stress-assisted annealing to improve the crystalline quality of an epitaxial YSZ buffer layer on Si

Choi, Hyung-Jin; Jang, Jiin-Yuh; Jung, Soo Young; Ning, Ruiguang; Kim, Minseok; Jung, Sung-Jin; Lee, Jun Young; Park, Jin-Soo; Lee, Byung Chul; Jang, Ji‐Soo; Kim, Seong Keun; Lee, Kyu Hyoung; Lee, June Hyuk; Won, Sung Ok; Li, Yulan; Hu, Sanmei; Choi, Si‐Young; Baek, Seung Hyub

doi:10.1039/d2tc01665f

Cited by 8 publications

(4 citation statements)

References 47 publications

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“…YSZ has a fluorite structure ( Fm 3 ̅m , cubic), with a lattice parameter of 5.143 Å. Owing to the small lattice mismatch with Si ( Fm 3̅ m , cubic, 5.431 Å), YSZ can be grown epitaxially on Si. The epitaxial YSZ layers on Si can function as a buffer layer to integrate additional functional oxide overlayers onto Si. − Owing to their unique growth process, involving the scavenging effect, epitaxial YSZ buffer layers can be deposited on Si using low-cost deposition processes, such as PLD and sputtering. β-Ga 2 O 3 belongs to a monoclinic crystal system ( C 2/ m , a = 12.23 Å, b = 3.04 Å, c = 5.80 Å, and β = 103.7°) and has a large lattice mismatch with cubic YSZ and Si substrates.…”

Section: Resultsmentioning

confidence: 99%

Epitaxial Growth of β-Ga₂O₃ Thin Films on Si with YSZ Buffer Layer

et al. 2022

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We report the epitaxial growth of (2̅01)-oriented β-Ga2O3 thin films on a (001) Si substrate using the pulsed laser deposition technique employing epitaxial yttria-stabilized zirconia (YSZ) buffer layers. Epitaxial β-Ga2O3 thin films possess a biaxial compressive strain on YSZ single-crystal substrates while they exhibit a biaxial tensile strain on YSZ-buffered Si substrates. Post-annealing improves the crystalline quality of β-Ga2O3 thin films. High-resolution X-ray diffraction analyses reveal that the epitaxial (2̅01) β-Ga2O3 thin films on Si have eight in-plane domain variants to accommodate the large difference in the crystal structure between monoclinic β-Ga2O3 and cubic YSZ. The results provide a pathway to integrate epitaxial β-Ga2O3 thin films on a Si gold standard substrate, which will expand the application scope beyond high-power electronics.

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Section: Resultsmentioning

confidence: 99%

Epitaxial Growth of β-Ga₂O₃ Thin Films on Si with YSZ Buffer Layer

et al. 2022

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“…For the common ground electrode necessary for the d 31 operation of the PMUT, a La 0.67 Sr 0.33 MnO 3 (LSMO) layer is utilized. LSMO is a conductive perovskite oxide, serves as a ground electrode and aids in the growth of PMN-PZT due to its similar crystal structure 33 . To simplify the fabrication process, the PMUT is constructed using an SOI wafer, with a silicon device layer serving as the PMUT’s passive layer.…”

Section: Methodsmentioning

confidence: 99%

Dual-frequency piezoelectric micromachined ultrasound transducer based on polarization switching in ferroelectric thin films

Park,

Jung,

Kim

et al. 2023

Microsyst Nanoeng

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Due to its additional frequency response, dual-frequency ultrasound has advantages over conventional ultrasound, which operates at a specific frequency band. Moreover, a tunable frequency from a single transducer enables sonographers to achieve ultrasound images with a large detection area and high resolution. This facilitates the availability of more advanced techniques that simultaneously require low- and high-frequency ultrasounds, such as harmonic imaging and image-guided therapy. In this study, we present a novel method for dual-frequency ultrasound generation from a ferroelectric piezoelectric micromachined ultrasound transducer (PMUT). Uniformly designed transducer arrays can be used for both deep low-resolution imaging and shallow high-resolution imaging. To switch the ultrasound frequency, the only requirement is to tune a DC bias to control the polarization state of the ferroelectric film. Flextensional vibration of the PMUT membrane strongly depends on the polarization state, producing low- and high-frequency ultrasounds from a single excitation frequency. This strategy for dual-frequency ultrasounds meets the requirement for either multielectrode configurations or heterodesigned elements, which are integrated into an array. Consequently, this technique significantly reduces the design complexity of transducer arrays and their associated driving circuits.

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“…The resolution in PFM is determined by the size of the scanning probe's apex, with recent advancements achieving imaging resolution down to about 10 nm from the micrometer level. Advanced PFM offers a range of versatile modes, such as switching spectroscopy PFM that captures local hysteresis loops at individual points [170] , Stroboscopic PFM for nanosecond time resolution [171] , resonance-enhanced PFM to boost measurement sensitivity [172] , along with dual AC resonance tracking PFM [173] , and band-excitation PFM [174] .…”

Section: Characterization Techniques For Ferroelectricsmentioning

confidence: 99%

Reduced dimensional ferroelectric domains and their characterization techniques

Jang,

Choi

2024

Microstructures

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Ferroelectricity is one of the most major physical phenomena in electronic devices due to its sustainable polarity in the absence of an external electric field and its switchability in response to external stimuli. In alignment with the industry trend towards increasingly integrated devices, research into smaller-sized ferroelectric materials becomes indispensable. In the pursuit of achieving the pinnacle of device miniaturization, recent studies have unveiled materials exhibiting sub-nanometric, unit cell-level domains. Concurrently, advances in transmission electron microscopy-based structural characterization techniques have been made, enabling in-depth analysis of the intricate properties of these miniaturized ferroelectric materials. This review highlights the structural mechanism of ferroelectricity in a reduced scale, as well as the recent advancements in electron microscopy techniques for characterizing miniaturized ferroelectric domains, particularly in the fields of in-situ biasing and atomic scale imaging. We believe that this work will provide structural insights for engineering and characterizing ferroelectrics for the design of downsized high-density memory devices at the quantum limit.

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Thermal stress-assisted annealing to improve the crystalline quality of an epitaxial YSZ buffer layer on Si

Abstract: A rapid heating rate (∼110 °C s−1) allows strain energy to maximally build up in the YSZ layer at the annealing temperature, and the defects are effectively annihilated during annealing.

Cited by 8 publications

References 47 publications

Epitaxial Growth of β-Ga₂O₃ Thin Films on Si with YSZ Buffer Layer

Epitaxial Growth of β-Ga₂O₃ Thin Films on Si with YSZ Buffer Layer

Dual-frequency piezoelectric micromachined ultrasound transducer based on polarization switching in ferroelectric thin films

Reduced dimensional ferroelectric domains and their characterization techniques

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Thermal stress-assisted annealing to improve the crystalline quality of an epitaxial YSZ buffer layer on Si

Abstract: A rapid heating rate (∼110 °C s−1) allows strain energy to maximally build up in the YSZ layer at the annealing temperature, and the defects are effectively annihilated during annealing.

Cited by 8 publications

References 47 publications

Epitaxial Growth of β-Ga2O3 Thin Films on Si with YSZ Buffer Layer

Epitaxial Growth of β-Ga2O3 Thin Films on Si with YSZ Buffer Layer

Dual-frequency piezoelectric micromachined ultrasound transducer based on polarization switching in ferroelectric thin films

Reduced dimensional ferroelectric domains and their characterization techniques

Contact Info

Product

Resources

About

Epitaxial Growth of β-Ga₂O₃ Thin Films on Si with YSZ Buffer Layer

Epitaxial Growth of β-Ga₂O₃ Thin Films on Si with YSZ Buffer Layer