Thermal stability study of Ni–Si silicide films on Ni/4H-SiC contact by in-situ temperature-dependent sheet resistance measurement

Abstract

We investigate the Ni–Si film silicidation process on 4H-SiC and Si substrates and compare the thermal stability of the films grown on each substrate. The Ni–Si films were subjected to rapid thermal annealing (RTA) in the temperature range 575 °C–975 °C for 90 s, and their thermal stability was characterized by in-situ temperature-dependent sheet resistance measurements at temperatures of 25 °C–550 °C. The sheet resistance of a 40 nm thick Ni film was observed to increase sharply above 330 °C in the Ni/Si (100) interface, but slightly decrease at approximately 480 °C in the Ni/4H-SiC interface. The thermal stability of the films was found to be significantly dependent on the RTA temperature. Thermally stable Ni–Si silicide films with excellent Ohmic properties (no hysteresis behavior) can be obtained on 4H-SiC substrates at RTA temperatures of 925 °C–975 °C and can used for application in MOSFET devices.

Reliable Ohmic Contact Properties for Ni/Hydrogen-Terminated Diamond at Annealing Temperature up to 900 °C

“…Ni/H-diamond possess good thermal stability even after annealing at temperatures as high as 900 °C for 10 min, which is comparable with those of the Ni/SiC contacts [21,22]. Comparing with the output currents of the 500 °C-annealed and 700 °C-annealed Ni/H-diamonds at ±1.0 V, those for the 900 °C-annealed one decreased slightly.…”

“…The R S and ρ C for the Ni/H-diamond after annealing at 700 • C are calculated to be Figure 4a shows the current-voltage curves of the Ni/H-diamond after annealing at 900 • C. All the curves have good linear relationships. Therefore, the ohmic contacts of the Ni/H-diamond possess good thermal stability even after annealing at temperatures as high as 900 • C for 10 min, which is comparable with those of the Ni/SiC contacts [21,22].…”

Effect of Palladium Electrode Patterns on Hydrogen Response Characteristics from a Sensor Based on Ta2O5 Film on SiC at High Temperatures

“…The thickness of NiSix used as the bottom-side electrode was determined to be approximately 100 nm. In a previous study [24], it was reported that A nickel (Ni) film was deposited on the backside of the wafer to form electrodes, and the annealing process was conducted for one minute at 950 °C for ohmic contact, after which Pd was deposited for 2 min at 300 W power with shadow masks of three different patterns in order to form the front Pd electrodes. The SiC substrates (hydrogen sensors) were attached to the quartz plates within a 3 × 3 cm 2 area and were finished with wire bonding.…”

“…The thickness of NiSix used as the bottom-side electrode was determined to be approximately 100 nm. In a previous study [24], it was reported that The sensors are made of a MIS structure. Pd film with a thickness of 200 nm was deposited over the Ta 2 O 5 layer.…”

“…The thickness of NiSi x used as the bottom-side electrode was determined to be approximately 100 nm. In a previous study [24], it was reported that the thermally stable Ni-Si silicide layers had excellent ohmic properties and no hysteresis behavior was observed on 4H-SiC substrates after rapid thermal annealing (RTA) at temperatures of 925 to 975 • C. Platinum (Pt) in the FIB-SEM image indicates a layer formed during the sample preparation by the FIB to protect the Pd layer from damage. the thermally stable Ni-Si silicide layers had excellent ohmic properties and no hysteresis behavior was observed on 4H-SiC substrates after rapid thermal annealing (RTA) at temperatures of 925 to 975°C.…”