Thermal stability of tunneling spin polarization

Kant, Ch.; Paluskar, PV Paresh; Swagten, Hjm Henk; Jonge, de Wjm Wim

doi:10.1016/j.jmmm.2004.09.021

Cited by 3 publications

(2 citation statements)

References 16 publications

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“…This is in contrast to other studies, where the Mn diffusion of the Mn-Ir toward the upper barrier interface was thought to be responsible for the decrease of the TMR ratio beyond 400 1C [17]. On the other hand, a similar behavior was reported by Kant et al and Palusker et al [19][20][21].…”

Section: Resultscontrasting

confidence: 66%

Low B2 crystallization temperature and high tunnel magnetoresistance in magnetic tunnel junctions

Ebke

Thomas

Schebaum

et al. 2010

Journal of Magnetism and Magnetic Materials

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Section: Resultscontrasting

confidence: 66%

Low B2 crystallization temperature and high tunnel magnetoresistance in magnetic tunnel junctions

Ebke

Thomas

Schebaum

et al. 2010

Journal of Magnetism and Magnetic Materials

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“…This is in contrast to other studies were the Mn diffusion of the Mn-Ir towards the upper barrier interface was thought to be responsible for the decrease of the TMR ratio beyond 400°C [15]. On the other hand, a similar behavior was reported by Kant et al and Palusker et al [16][17][18]. Fig.…”

Section: Resultscontrasting

confidence: 47%

X-Ray Absorption and Magnetic Circular Dichroism Studies of Co$_{2}$ FeAl in Magnetic Tunnel Junctions

et al. 2010

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The bulk magnetic moment and the element specific magnetic moment of Co 2 FeAl thin films were examined as a function of annealing temperature by alternating gradient magnetometer (AGM) and X-ray absorption spectroscopy (XAS) / X-ray magnetic circular dichroism (XMCD), respectively. A high magnetic moment can be achieved for all annealing temperatures and the predicted bulk and interface magnetic moment of about 5µ B are reached via heating. We will also present tunnel magnetoresistance (TMR) values of up to 153% at room temperature and 260% at 13 K for MgO based magnetic tunnel junctions (MTJs) with Co 2 FeAl and Co-Fe electrodes. magnetic films, magnetoresistance, thin films, x-ray spectroscopy

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Research on enhanced perpendicular magnetic anisotropy in CoFe/Pd bilayer structure

Zhu¹,

Han²

2012

Acta Phys. Sin.

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A series of CoFe/Pd bilayer thin films is fabricated by introducing a native oxide layer to the interface or to the inside of CoFe layer in this paper. The results indicate that the magnetic anisotropy of the film is transformed from in-plane to out-of-plane after annealing by introducing the native oxide layer. For the samples with the introduction of native oxide layer into CoFe layer, the strong perpendicular magnetic anisotropy is maintained in a wide range of the effective thickness (1.22 nm) of magnetic layer. For the perpendicular magnetic films, the thickness of CoFe layer in this special bilayer structure is at least 1.4 nm, thicker than in common CoFe/Pd multilayer structure. The results in this paper are beneficial for the fabrication of the electrodes in perpendicular magnetic devices with high thermal stability.

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Thermal stability of tunneling spin polarization

Cited by 3 publications

References 16 publications

Low B2 crystallization temperature and high tunnel magnetoresistance in magnetic tunnel junctions

Low B2 crystallization temperature and high tunnel magnetoresistance in magnetic tunnel junctions

X-Ray Absorption and Magnetic Circular Dichroism Studies of Co$_{2}$ FeAl in Magnetic Tunnel Junctions

Research on enhanced perpendicular magnetic anisotropy in CoFe/Pd bilayer structure

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