Thermal stability of the spin injection in Co/Ag/Co lateral spin valves

Abstract

Spin injection, spin diffusion, and spin detection are investigated in Co/Ag/Co lateral spin valves at room temperature. Clear spin accumulation signals are detected by the non-local measurement. By fitting the results to the one-dimensional diffusion equation, ∼ 8.6% spin polarization of the Co/Ag interface and ∼ 180 nm spin diffusion length in Ag are obtained. Thermal treatment results show that the spin accumulation signal drastically decreases after 100 • C annealing, and disappears under 200 • C annealing. Our results demonstrate that, compared to the spin diffusion length, the decrease and the disappearance of the spin accumulation signal are mainly dominated by the variation of the interfacial spin polarization of the Co/Ag interface.

Spin transport in epitaxial Fe3O4/GaAs lateral structured devices

“…The spin transport and the spin manipulation of carrier spins represent two key elements of semiconductor (SC) spintronics logic devices including several viable types of spin transistors, particularly spin field-effect transistors (FETs). [1][2][3] Research on spin injection and detection and spin coherence in semiconductors continues to draw extensive interest from both the scientific and the technical communities. [4][5][6] The electron spin relaxation time in SCs has been revealed to be several orders of magnitude longer than the electron momentum and energy relaxation times.…”

“…[26,27] Moreover, spin-orbit coupling (SOC) also play an important role in spin FET devices. [1,3,28] In this respect, the enhanced SOC effect near Fe 3 O 4 /GaAs interface [29] and two-dimensional (2D) SC as the spin transport media due to effects from 2D confinement are preference for the spin FET device. In this article, we report the fabrication and characterizations of a two-terminal lateral Fe 3 O 4 /ndoped GaAs(100) thin layer/Fe 3 O 4 spin-valve (SV) device.…”

Influence of temperature on thermal relaxation of exchange bias field in CoFe/Cu/CoFe/IrMn spin valve*

“…Because the exchange bias principle in ferromagnetic/antiferromagnetic systems has important applications in GMR heads, non-volatile memory, and magnetic transducers for high-density magnetic recording, materials with exchange coupling effects, such as spin valves and tunnel junctions, have been extensively investigated. [7][8][9][10][11] The magnetic electronic devices,when being used, must be able to withstand high temperatures or magnetic fields, which reduces the size of the exchange bias field of the devices and also restricts their performances. The thermal stability of an exchange bias greatly influences the reliability of magnetic electronic device.…”