Thermal stability of tantalum nitride based thin film resistors

Shostachenko, S. A.; Zakharchenko, R. V.; Ryzhuk, R. V.; Leshchev, Sergey

doi:10.1088/1757-899x/498/1/012014

Cited by 6 publications

(3 citation statements)

References 13 publications

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“…Transition metal nitrides have been a type of material of great interest, being widely studied for their importance both in fundamental science and in a wide range of technological applications [1,2]. Between their highlighted characteristics, mechanical properties, such as high hardness and thermal stability, as well as the high melting point, classify transition metal nitrides as refractory materials.…”

Section: Introductionmentioning

confidence: 99%

Growth Mechanisms of TaN Thin Films Produced by DC Magnetron Sputtering on 304 Steel Substrates and Their Influence on the Corrosion Resistance

et al. 2022

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In this work, thin films of TaN were synthesized on 304 steel substrates using the reactive DC sputtering technique from a tantalum target in a nitrogen/argon atmosphere. All synthesis parameters such as gas ratio, pressure, gas flow, and substrate distance, among others, were fixed except the applied power of the source for different deposited coatings. The effect of the target power on the formation of the resulting phases and the microstructural and morphological characteristics was studied using XRD and AFM techniques, respectively, in order to understand the growth mechanisms. Phase, line profile, texture, and residual stress analysis were carried out from the X-ray diffraction patterns obtained. Atomic force microscopy analysis allowed us to obtain values for surface grain size and roughness which were related to growth mechanisms in accordance with XRD results. Results obtained showed a strong correlation between the growth energy with the crystallinity of the samples and the formation of the possible phases since the increase in the growth power caused the samples to evolve from an amorphous structure to a cubic monocrystalline structure. For all produced samples, the δ-TaN phase was observed despite the low N2 content used in the process (since for low N2 content it was expected to be possible to obtain films with α-Ta or hexagonal ε-TaN crystalline structure). In order to determine the corrosion resistance of the coatings, electrochemical impedance spectroscopy and polarization resistance were employed in the Tafel region. The results obtained through this evaluation showed a direct relationship between the power used and the improvement of the properties against corrosion for specific grain size values.

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Section: Introductionmentioning

confidence: 99%

Growth Mechanisms of TaN Thin Films Produced by DC Magnetron Sputtering on 304 Steel Substrates and Their Influence on the Corrosion Resistance

et al. 2022

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“…Transition metal nitrides, especially tantalum nitride (TaN), are in high demand for a wide range of applications due to their high melting point, hardness, excellent wear and corrosion resistance, refractory character, mechanical and high-temperature stability, chemical inertness, and histocompatibility [1][2][3][4][5][6]. Some prominent examples of such applications are as a protective coating material against oxidation and corrosion [7], as a diffusion barrier for Al and Cu metallization in advanced microelectronics [8][9][10][11], in phosphide and nitride optoelectronics as ohmic contact [3,4], in artificial heart valves as histocompatibility materials [12], thin film resistors [13], as ceramic pressure sensors [14], and also different mechanical applications [5,6]. The large interest for TaN arises since it is considered recently as a high thermal conductive material in microelectronic chips for the θ-TaN phase [15].…”

Section: Introductionmentioning

confidence: 99%

Study on the Electrical, Structural, Chemical and Optical Properties of PVD Ta(N) Films Deposited with Different N2 Flow Rates

Rasadujjaman

Wang

et al. 2021

Coatings

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By reactive DC magnetron sputtering from a pure Ta target onto silicon substrates, Ta(N) films were prepared with different N2 flow rates of 0, 12, 17, 25, 38, and 58 sccm. The effects of N2 flow rate on the electrical properties, crystal structure, elemental composition, and optical properties of Ta(N) were studied. These properties were characterized by the four-probe method, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry (SE). Results show that the deposition rate decreases with an increase of N2 flows. Furthermore, as resistivity increases, the crystal size decreases, the crystal structure transitions from β-Ta to TaN(111), and finally becomes the N-rich phase Ta3N5(130, 040). Studying the optical properties, it is found that there are differences in the refractive index (n) and extinction coefficient (k) of Ta(N) with different thicknesses and different N2 flow rates, depending on the crystal size and crystal phase structure.

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“…Transition metal nitrides, especially tantalum nitride (TaN) are highly demanded in a wide range of applications due to their high melting point, hardness, excellent wear and corrosion resistance, refractory character, mechanical and high-temperature stability, chemical inertness, and histocompatibility [1][2][3][4][5][6]. Some prominent examples of such applications as a protective coating material for protection against oxidation and corrosion [7], as a diffusion barrier for Al and Cu metallization in advanced microelectronics [8][9][10][11], in phosphide and nitride optoelectronics as ohmic contact [3,4], in artificial heart valves as histocompatibility materials [12], thin film resistor [13], as ceramic pressure sensors [14], and also different mechanical applications [5,6]. The large interest for TaN arises since it is considered recently as a high thermal conductive material in microelectronic chips for the θ-TaN phase [15].…”

Section: Introductionmentioning

confidence: 99%

Influence of N<sub>2</sub> Flows on Sputtered Ta(N) films: Electrical, Structural, Chemical and Optical Properties

Hu¹,

Rasadujjaman²,

Wang³

et al. 2021

Preprint

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By reactive DC magnetron sputtering from a pure Ta target onto silicon substrates, Ta(N) films were prepared with a different N2 flow rate of 0, 12, 17, 25, 38, 58 sccm. The effects of N2 flow rate on the electrical properties, crystal structure, elemental composition and optical properties of Ta(N) were studied. These properties were characterized by the four-probe method, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry (SE). Results show that the deposition rate decreases with an increase of the N2 flows. On the other hand, the resistivity increases, the crystal size decreases, and the crystal structure transitions from β-Ta to TaN(111), and finally becomes the N-rich phase Ta3N5 (130,040). Studying the optical properties, it is found that there are differences in the refractive index (n) and extinction coefficient (k) of Ta(N) with different thicknesses and different N2 flow rates, and dependent on the crystal size and crystal phase structure.

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Thermal stability of tantalum nitride based thin film resistors

Cited by 6 publications

References 13 publications

Growth Mechanisms of TaN Thin Films Produced by DC Magnetron Sputtering on 304 Steel Substrates and Their Influence on the Corrosion Resistance

Growth Mechanisms of TaN Thin Films Produced by DC Magnetron Sputtering on 304 Steel Substrates and Their Influence on the Corrosion Resistance

Study on the Electrical, Structural, Chemical and Optical Properties of PVD Ta(N) Films Deposited with Different N2 Flow Rates

Influence of N<sub>2</sub> Flows on Sputtered Ta(N) films: Electrical, Structural, Chemical and Optical Properties

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