Thermal stability of sulfur passivated InP(100)-(1×1)

Anderson, G. W.; Hanf, Marie-Christine; Norton, P. R.; Lu, Zhaoming; Graham, M. J.

doi:10.1063/1.112662

Cited by 30 publications

(23 citation statements)

References 13 publications

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“…14 Under heat treatment in vacuum between 200 and 350°C, 15 (NH 4 ) 2 S x -treated InP͑100͒ surfaces convert to a ͑2ϫ1͒ surface reconstruction, but the S overlayer is stable up to about 460°C. 16 From an oxidation of S-treated GaAs surfaces, Oshima et al 17 have found that the S-passivated surface consisting of one or two monolayers of Ga-S layer comparatively inhibited oxidation reaction, and that the underlying GaAs was oxidized leaving the surface Ga-S layer unoxidized. They also suggested that a thick overlayer would reduce the degradation of PL output.…”

Section: Introductionmentioning

confidence: 98%

Stability of sulfur-treated InP surface studied by photoluminescence and x-ray photoelectron spectroscopy

Han

Kim

Lee

et al. 1997

Journal of Applied Physics

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The degradation behavior of the sulfur-treated InP surface at relatively low temperature has been investigated with x-ray photoelectron and photoluminescence (PL) spectroscopy. The results showed that the treated surfaces were oxidized to In2O3, InPO3, and InPO4 at 250 °C and in a vacuum of 10−3 Torr for 20 min. As the holding time for S-treated InP under a vacuum of 10−3 Torr increased, the PL peak caused by the band edge transition decreased without the formation of oxides. It was therefore suggested that the decrease of the PL intensity for S-treated InP is only related to the generation of phosphorous vacancies at the surface, not to oxide formation. The usefulness of a thin S overlayer on III–V semiconductors was also discussed.

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Section: Introductionmentioning

confidence: 98%

Stability of sulfur-treated InP surface studied by photoluminescence and x-ray photoelectron spectroscopy

Han

Kim

Lee

et al. 1997

Journal of Applied Physics

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“…There are different ways of cleaning InP͑100͒ surfaces: ion sputtering and annealing, 4 -7 atomic hydrogen cleaning, 1-3 sulfur passivation, [5][6][7] and chemical cleaning. [5][6][7] Chemical cleaning offers an effective and practical method for cleaning semiconductor surfaces. It should be noted that the InP surface can be made stable up to 480°C when it is under a P overpressure as is used in molecular beam epitaxial ͑MBE͒ growth.…”

Section: Introductionmentioning

confidence: 99%

Preparation of clean InP(100) surfaces studied by synchrotron radiation photoemission

Sun

Liu

Machuca

et al. 2002

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Wet chemical cleaning of InP surfaces investigated by in situ and ex situ infrared spectroscopyDependence of indium-tin-oxide work function on surface cleaning method as studied by ultraviolet and x-ray photoemission spectroscopiesThe chemical cleaning of indium phosphide ͑InP͒,͑100͒ surfaces is studied systematically by using photoemission electron spectroscopy. In order to achieve the necessary surface sensitivity and spectral resolution, synchrotron radiation with photon energies ranging from 60 to 600 eV are used to study the indium 4d, phosphorus 2p, carbon 1s, and oxygen 1s core levels, and the valence band. Typical H 2 SO 4 :H 2 O 2 :H 2 O solutions used to etch GaAs͑100͒ surfaces are applied to InP͑100͒ surfaces. It is found that the resulting surface species are significantly different from those found on GaAs͑100͒ surfaces and that a second chemical cleaning step using a strong acid is required to remove residual surface oxide. This two-step cleaning process leaves the surface oxide free and with approximately 0.4 ML of elemental phosphorus, which is removed by vacuum annealing. The carbon coverage is also reduced dramatically from approximately 1 to about 0.05 ML. The chemical reactions are investigated, the resulting InP surface species at different cleaning stages are determined, and the optimum cleaning procedure is presented.

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“…InP is commonly used as a substrate for heteroepitaxial growth for the production of microelectronic devices, and thus preparation of a clean and stable InP͑100͒ surface is important in device fabrication. 8,9,11,12 Hence, an ordered ͑1ϫ1͒ sulfur layer model has been proposed. 1͒ and GaAs, 2-5 with a concomitant saturation of surface dangling bonds.…”

Section: Introductionmentioning

confidence: 99%

Surface morphology of ex situ sulfur-passivated (1×1) and (2×1) InP(100) surfaces

Qin

Shapter

et al. 1998

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Ex-situ aqueous ͑NH 4 ) 2 S treated sulfur-passivated InP substrates have been studied using ultrahigh vacuum scanning tunnelling microscopy ͑STM͒ and low-energy electron diffraction ͑LEED͒. The morphology of the passivated surface was imaged after a mild sample annealing. The STM images of a surface exhibiting a good 1ϫ1 LEED pattern show that the top layer of the sulfur-passivated surface is poorly ordered. A surface bilayer atomic step has been observed to be common on sulfur-passivated surfaces. The magnitude of the surface roughness for the passivated surfaces lies between 10 Å and 25 Å; this is much smaller than the roughness of InP͑100͒ substrates prepared using previously published methods. After annealing the sample at ϳ420°C, a ͑2ϫ1͒ LEED pattern with split half-integer spots has been observed. The associated STM images show that these split half-integer diffraction beams correspond to regularly spaced domains with a width of ϳ20-30 Å in the ͓011͔ direction. The surface roughness increases with annealing temperature; the surface corresponding to the best 2ϫ1 LEED symmetry ͑annealing at ϳ420°C͒ has a roughness double that of the 1ϫ1 phase.

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Thermal stability of sulfur passivated InP(100)-(1×1)

Cited by 30 publications

References 13 publications

Stability of sulfur-treated InP surface studied by photoluminescence and x-ray photoelectron spectroscopy

Stability of sulfur-treated InP surface studied by photoluminescence and x-ray photoelectron spectroscopy

Preparation of clean InP(100) surfaces studied by synchrotron radiation photoemission

Surface morphology of ex situ sulfur-passivated (1×1) and (2×1) InP(100) surfaces

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