Thermal stability of sol–gel derived methacrylate oligosiloxane-based hybrids for LED encapsulants

Kim, Joon-Soo; Yang, SeungCheol; Bae, Byeong‐Soo

doi:10.1007/s10971-009-2117-9

Cited by 34 publications

(30 citation statements)

References 16 publications

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“…The stability test of ZTO:F TFT was investigated with applying a methacrylate hybrid material passivation layer that has an excellent gas barrier property. 8,9 Interestingly, the small negative threshold voltage shift ( V th ) less than 1 V under positive bias-temperature-illumination stress condition was observed. It is thought that the dominant factor of the extraordinary result to the conventional report is due to the M-F bonds at the ZTO:F channel/gate dielectric interface.…”

mentioning

confidence: 99%

Bias-Temperature-Illumination Stability of Aqueous Solution Processed Fluorine Doped Zinc Tin Oxide (ZTO:F) Transistor

Jeon

Hwang

Bae

2012

Electrochem. Solid-State Lett.

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Novel fluorine doped zinc tin oxide (ZTO:F) thin-film transistor (TFT) was fabricated by an aqueous sol-gel method and their bias-temperature-illumination stability were observed. ZTO:F TFT optimized at Sn:Zn = 1:1 composition exhibits high field-effect mobility of 11.52 cm 2 /V · s at a process temperature of 350 • C. In particular, the TFT displays a small negative threshold voltage shift of approximately 1 V under positive bias-temperature-illumination stress. This is attributed to asymmetry of the recombination for photo-generated holes with the free electrons at the ZTO:F channel/gate dielectric interface due to the substitution of oxygen by fluorine with different electrovalence.Amorphous oxide thin film transistors (TFTs) are attractive switching devices for active matrix displays due to their superior performance and good uniformity compared to Si-based TFTs. 1 Another advantage of oxide semiconductors is that they can be produced using a solution process such as spin-coating or inkjet-printing thus enable simple and low cost fabrication. Solution processed oxide TFTs have exhibited the remarkable performances such as high mobility, bias stability, and low annealing temperature although they basically require an annealing process to obtain a dense oxide structure. 2-6 Seo et al. attempted to obtain the high performance, 2 to lower the annealing temperature 3 and to ensure the bias stability under humidity and bias stress. 4 Park et al. and Avis et al. demonstrated bias stability of oxide TFTs for application to electronic device such as organic light emitting diodes (OLEDs) utilizing a patterned structure 5 and the use of an inkjet process, 6 respectively. The poor stability of oxide TFT devices leads to deterioration of the current-voltage (I-V) characteristics under prolonged current and gate bias, resulting in a threshold voltage shift which can affect the brightness of OLED devices. 7 In this study, we present a fluorine doped zinc tin oxide (ZTO:F) TFT with a very high mobility of 11.52 cm 2 /V · s by applying an aqueous solution process using metal fluoride precursors. The stability test of ZTO:F TFT was investigated with applying a methacrylate hybrid material passivation layer that has an excellent gas barrier property. 8,9 Interestingly, the small negative threshold voltage shift ( V th ) less than 1 V under positive bias-temperature-illumination stress condition was observed. It is thought that the dominant factor of the extraordinary result to the conventional report is due to the M-F bonds at the ZTO:F channel/gate dielectric interface.The ZTO:F solution is prepared by using zinc fluoride hydrate (ZnF 2 · xH 2 O) and tin fluoride (SnF 2 ), with water as a solvent. The concentration of metal precursors was 0.2 M, and the molar ratio of (Sn/Sn+Zn) was 0.5. The solution was stirred for 4 hr at room temperature in a glass vial and a clear colorless solution was obtained. The heavily boron doped (p + ) Si substrate with a thermally grown 100 nm thick SiO 2 was ultra-sonicated in deionized water for...

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confidence: 99%

Bias-Temperature-Illumination Stability of Aqueous Solution Processed Fluorine Doped Zinc Tin Oxide (ZTO:F) Transistor

Jeon

Hwang

Bae

2012

Electrochem. Solid-State Lett.

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“…37 The signal of Si-O-CH 3 protons at 3.6 ppm is not detected, 37 which is in good agreement with the result of FTIR. Figure 5 shows the 29 The GPC curve and characteristic parameters of MPMS-PHMS are shown in Figure 6. As can be seen, the number-average molecular weight (M n ) of MPMS-PHMS is 3.38 Â 10 3 , which is basically consistent with theoretical design value.…”

Section: Resultsmentioning

confidence: 99%

“…29 Si NMR spectrum of MPMS-PHMS. MPMS-PHMS: polyhydrosiloxane containing acrylate groups;29 Si NMR: silicon nuclear magnetic resonance.…”

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confidence: 99%

Synthesis of an adhesion-enhancing polyhydrosiloxane containing acrylate groups and its cross-linked addition-cure silicone encapsulant

Pan

Zeng

et al. 2013

Journal of Elastomers & Plastics

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A novel adhesion-enhancing polyhydrosiloxane containing acrylate groups (MPMS-PHMS) was prepared via the hydrolysis of 3-methacryloyloxypropylmethyldimethoxysilane and the ring-opening polymerization of octamethylcyclotetrasiloxane and tetramethylcyclotetrasiloxane, and was used as cross-linker for addition-cure silicone encapsulant (ASE) with a large amount of alumina as thermally conductive fillers. The chemical structure of MPMS-PHMS was characterized by Fourier transform infrared spectroscopy, proton nuclear magnetic resonance spectroscopy, silicon nuclear magnetic resonance spectroscopy, and gel permeation chromatography. The effect of MPMS-PHMS on the properties of ASE was investigated. The results indicated that when using MPMS-PHMS as cross-linker, the cross-linking density of ASE was much higher than that of ASE using commercial poly(hydromethylsiloxane) cross-linker. It was also found that MPMS-PHMS not only markedly improved the adhesion strength of ASE to aluminum substrate but also significantly enhanced the mechanical properties of ASE. Appropriately increasing cure temperature and prolonging cure time were favorable to improve the adhesion strength of ASE. The optimal content of MPMS-PHMS was 10 phr, and the suitable cure temperature and time were approximately between 130 and 150 C and 2 h, respectively.

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“…20,21 Many efforts have been made in preparation of polysiloxanes with high phenyl content. 12,17,[22][23][24][25][26][27][28][29][30] Taking consideration of the transparency, thermal/radiant stability and cost, polysiloxane where phenyl directly bond to Si (phenyl-siloxane) is preferred for both research and industry. Among them, the copolymer of diphenylsilanediol (DPSD) attracts a lot of attention.…”

Section: Introductionmentioning

confidence: 99%

UV-curable ladder-like diphenylsiloxane-bridged methacryl-phenyl-siloxane for high power LED encapsulation

et al. 2018

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Thermal stability of sol–gel derived methacrylate oligosiloxane-based hybrids for LED encapsulants

Cited by 34 publications

References 16 publications

Bias-Temperature-Illumination Stability of Aqueous Solution Processed Fluorine Doped Zinc Tin Oxide (ZTO:F) Transistor

Bias-Temperature-Illumination Stability of Aqueous Solution Processed Fluorine Doped Zinc Tin Oxide (ZTO:F) Transistor

Synthesis of an adhesion-enhancing polyhydrosiloxane containing acrylate groups and its cross-linked addition-cure silicone encapsulant

UV-curable ladder-like diphenylsiloxane-bridged methacryl-phenyl-siloxane for high power LED encapsulation

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