Thermal stability and diffusion in gadolinium silicate gate dielectric films

Abstract

Access and use of this website and the material on it are subject to the Terms and Conditions set forth at Thermal stability and diffusion in gadolinium silicate gate dielectric films Landheer, D.; Wu, X.; Morais, J.; Baumvol, I. J. R.; Pezzi, R. P.; Miotti, L.; Lennard, W. N.; Kim, J. K.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=fr L'accès à ce site Web et l'utilisation de son contenu sont assujettis aux conditions présentées dans le site LISEZ CES CONDITIONS ATTENTIVEMENT AVANT D'UTILISER CE SITE WEB. NRC Publications Record / Notice d'Archives des publications de CNRC:http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=12743790&lang=en http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=12743790&lang=fr READ THESE TERMS AND CONDITIONS CAREFULLY BEFORE USING THIS WEBSITE.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=en Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Questions? Contact the NRC Publications Archive team atPublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://doi.org/10.1063/1.1412284Applied Physics Letters, 79, 16, pp. 2618Letters, 79, 16, pp. -2620Letters, 79, 16, pp. , 2001 Thermal stability and diffusion in gadolinium silicate gate dielectric films

Oxygen reaction-diffusion in metalorganic chemical vapor deposition HfO2 films annealed in O2

“…O 2 annealing for 60 s ͑sample 3 in Table I͒ produces an increase on the O-areal density of about 30% with respect to the as-prepared sample ͑sample 1͒ and a comparable percentage decrease on the N-areal density. Figure 1͑b͒ shows Si, 16 [9][10][11][12][13] in aluminum, zirconium, and gadolinium oxides and silicates, the present HfO 2 /SiO x N y structure displays higher resistance to oxygen migration from the gas into the solid phase and incorporation therein, as well as smaller isotopic exchanges. 29 Si profiles were determined by NRP 16 ͑results not shown here͒, revealing that Si remains immobile during annealing, in contrast to several of the earlier mentioned materials where substrate Si is seen to migrate into the oxide film.…”

“…Previous studies 1 in other high-k ultrathin films on Si indicated that the interface layer thickness and composition can vary according to the deposition method and routine, and various species can be transported during post deposition thermal processing, like oxygen, 9,10 Si, [11][12][13] and the metal species, 14,15 altering the atomic concentrations as well as chemical composition of the system and consequently electrical characteristics like dielectric constant, interface density of states, and mobility of charge carriers in the transistor channel. In particular, stability against annealing in O 2 -containing atmospheres is of high interest, since in further processing steps it is either performed intentionally to improve leakage current and CET characteristics 1,7,8 or unintentionally, because oxygen is almost always residual in any production furnace.…”

Excellent frequency dispersion of thin gadolinium oxide high-k gate dielectrics

“…8,9 Gd 2 O 3 layers on strained Si x Ge 1−x were found to be most effective for surface passivation of SiGe giving the lowest interface state density. Landheer et al 10 showed that oxygen diffused into the film, thereby eliminating oxygen vacancies during O 2 annealing. In this letter, a high-k gadolinium oxide gate dielectric was grown on Si substrate by reactive rf sputtering.…”

Structural comparison of gadolinium and lanthanum silicate films on Si(1 0 0) by HRTEM, EELS and SAED

“…The formation of SiO 2 is likely the result of oxygen from the annealing atmosphere diffusing into the interfacial region through the gadolinium silicate layer and reacting with the silicon to form SiO 2 . Oxygen diffusion through the gadolinium silicate ®lm has been assessed by Rutherford backscattering and narrow resonance nuclear pro®ling and reported elsewhere [8].…”