2020
DOI: 10.1007/s00396-020-04718-0
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Thermal stability and dielectric relaxation behavior of in situ prepared poly(vinyl alcohol) (PVA)-reduced graphene oxide (RGO) composites

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Cited by 29 publications
(10 citation statements)
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“…Thus, one proposed explanation for the reduced relaxation time was that due to the enhancement of carrier mobility contributed by π−π interaction, the increase in carrier mobility could reduce the transition resistance of electrons, reducing the τ. 43,44 However, as the results in Table 3 show, we calculated that the τ of rGO@PANI was smaller than the matrix, and the relaxation phenomenon should be reduced as the loading content increased, which is inconsistent with our study. Thus, the idea that the improved carrier mobility could reduce the relaxation time is true, and there should be another mechanism that cooperated with the improved carrier mobility to achieve this effect.…”
Section: Resultscontrasting
confidence: 99%
“…Thus, one proposed explanation for the reduced relaxation time was that due to the enhancement of carrier mobility contributed by π−π interaction, the increase in carrier mobility could reduce the transition resistance of electrons, reducing the τ. 43,44 However, as the results in Table 3 show, we calculated that the τ of rGO@PANI was smaller than the matrix, and the relaxation phenomenon should be reduced as the loading content increased, which is inconsistent with our study. Thus, the idea that the improved carrier mobility could reduce the relaxation time is true, and there should be another mechanism that cooperated with the improved carrier mobility to achieve this effect.…”
Section: Resultscontrasting
confidence: 99%
“…Defining the GO structure, the ratio of ID/IG = 1.03 indicates the high reduction degree of GO. Reduced graphene oxide (rGO) differs due to its higher conductivity and sp 2 cluster organization, which is important to consider for the electrospinning process [ 36 , 37 ]. The ratios of ID/IG = 1.07 for PVA-GO and ID/IG = 1.14 for core–shell fibers were compared with ID/IG = 1.03 for pristine GO, where the higher level of interaction formed in the electrospun fibers caused a gradual increase in ID/IG [ 38 ].…”
Section: Resultsmentioning
confidence: 99%
“…Whereas, the increase in oscillating frequency will eliminate contributed ionic and space charge as well as cause a systematic drop in the dielectric response [13]. Thus, the GO filling inside the PVA polymer matrix achieved high dielectric SC caused by Maxwell-Wagner-Sillar theory [11]. The phase angle in Figure 2(b) is an indication of the leakage current through GO/PVA spacers.…”
Section: The Mega Dielectric Value Of Doublementioning
confidence: 99%
“…Thus, nano-composites doped inside a polymer matrix is a promising candidate for promoting dielectric characteristics for wearable and flexible electronics [5]. Among enormous compositions types, RGO and GO are blinded in polymer to expand the dielectric response via two different technique, the first is by forming multiple micro-capacitors inside the spacer while the other is using the oxide function group strong polarization [11]. The present section is revealing the potential of using graphene-based polymer composite potential as a super dielectric spacer for RF SC applications [12].…”
Section: Dielectric Supercapacitor Of Pseudo 2d Gomentioning
confidence: 99%