Thermal spin injection and accumulation in CoFe/MgO/n-type Ge contacts

Jeon, Kun-Rok; Min, Byoung‐Chul; Park, Seung-Young; Lee, Kyeong-Dong; Song, Hyon-Seok; Park, Youn-Ho; Jo, Younghun; Shin, Sung‐Chul

doi:10.1038/srep00962

Cited by 15 publications

(5 citation statements)

References 34 publications

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“…Because the predictions of this model were shown to be inconsistent with experiments 5,28,32 , extended versions 16,17,45 of the two-step tunneling model 14 have recently been developed. Nevertheless, some of the predictions of those extended models 16,45 are also in disagreement with experiments on electrical spin injection 46 and thermal spin injection by Seebeck spin tunneling in similar FM/I/SC structures [47][48][49][50] . The origin of the large spin signals and whether localized states play a role is thus still unclear.…”

Section: Discussionmentioning

confidence: 78%

Nonlinear spin transport in a rectifying ferromagnet/semiconductor Schottky contact

et al. 2015

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The electrical creation and detection of spin accumulation in ferromagnet/semiconductor Schottky contacts that exhibit highly non-linear and rectifying electrical transport is evaluated. If the spin accumulation in the semiconductor is small, the expression for the spin voltage is identical to that of linear transport. However, if the spin accumulation is comparable to the characteristic energy scale that governs the degree of non-linearity, the spin detection sensitivity and the spin voltage are notably reduced. Moreover, the non-linearity enhances the back-flow of spins into the ferromagnet and its detrimental effect on the injected spin current, and the contact resistance required to avoid back-flow is larger than for linear transport. It is also shown that by virtue of the non-linearity, a non-magnetic metal contact can be used to electrically detect spin accumulation in a semiconductor.

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Section: Discussionmentioning

confidence: 78%

Nonlinear spin transport in a rectifying ferromagnet/semiconductor Schottky contact

et al. 2015

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“…Seebeck spin tunneling has now been reproduced for Ge devices with MgO-based tunnel contacts. 41,42 The tunnel magneto-Seebeck effect has been studied in magnetic tunnel junctions with Al 2 O 3 barriers, 43 and several other reports on the topic have recently appeared. [44][45][46][47] Anisotropy of the tunnel magnetothermopower in GaMnAs based-tunnel devices was observed, 48 whereas deviations from Ohm's law due to spin-thermoelectric coupling and Seebeck rectification up to microwave frequencies have been reported in MgO-based tunnel junctions.…”

Section: Experimental Observation Of Seebeck Spin Tunnelingmentioning

confidence: 99%

Thermal creation of a spin current by Seebeck spin tunneling

Jansen

Breton²,

Deac

et al. 2013

Spintronics VI

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International audienceThe thermoelectric analog of spin-polarized tunneling, namely Seebeck spin tunneling, is a recently discovered phenomenon that arises from the spin-dependent Seebeck coefficient of a magnetic tunnel contact. In a tunnel junction with one ferromagnetic electrode and one non-magnetic electrode, a temperature difference between the two electrodes creates a spin current across the contact. Here, the basic principle and the observation of Seebeck spin tunneling are described. It is shown how it can be used to create a spin accumulation in silicon driven by a heat flow across a magnetic tunnel contact, without a charge tunnel current. The sign of the spin current depends on the direction of the heat flow, whereas its magnitude is anisotropic, i.e., dependent on the absolute orientation of the magnetization of the ferromagnet. The connection between Seebeck spin tunneling and the tunnel magneto-Seebeck effect, observed in metal magnetic tunnel junctions, is also clarified. Seebeck spin tunneling may be used to convert waste heat into useful thermal spin currents that aid or replace electrical spin current, and thereby improve the energy efficiency of spintronic devices and technologies. © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only

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“…Additionally, electric fields, spin voltages and temperature gradients are used to probe their physical properties. These forces create measurable currents that transport charge, spin, and/or heat across the MTJ, making them promising systems for investigating spin caloritronic phenomena [10][11][12][13][14][15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Tunneling anisotropic thermopower and Seebeck effects in magnetic tunnel junctions

2014

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The tunneling anisotropic magnetothermopower (TAMT) and the tunneling anisotropic spin-Seebeck (TASS) effects are studied for a magnetic tunnel junction (MTJ) composed of a ferromagnetic electrode, a zinc-blende semiconductor, and a normal metal. We develop a theoretical model for describing the dependence of a thermally induced tunneling current across the MTJ on the in-plane orientation of the magnetization in the ferromagnetic layer. The model accounts for the specific Bychkov-Rashba and Dresselhaus spin-orbit interactions present in these systems, which are responsible for the C 2v symmetry we find in the TAMT and the TASS.

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Thermal spin injection and accumulation in CoFe/MgO/n-type Ge contacts

Cited by 15 publications

References 34 publications

Nonlinear spin transport in a rectifying ferromagnet/semiconductor Schottky contact

Nonlinear spin transport in a rectifying ferromagnet/semiconductor Schottky contact

Thermal creation of a spin current by Seebeck spin tunneling

Tunneling anisotropic thermopower and Seebeck effects in magnetic tunnel junctions

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