Thermal spin current from a ferromagnet to silicon by Seebeck spin tunnelling

Breton, Jean-Christophe Le; Sharma, Sandeep; Saito, H.; Yuasa, Shinji; Jansen, R.

doi:10.1038/nature10224

Cited by 224 publications

(259 citation statements)

References 24 publications

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“…spin accumulation) in nonmagnetic SC is a central issue of SC-based spintronics 1,3-5 . Significant progress has been made on the spin accumulation in various SC systems by means of circularly polarized light 4,6 , spin-polarized tunneling 7-13 , hotelectron spin filtering 14,15 , spin-orbit interaction 16,17 , or magnetization dynamics 18,19 .Intriguingly, Le Breton et al 20 have reported a rather different mechanism for the spin accumulation, in which temperature difference across a ferromagnet (FM)/oxide/SC tunnel contact can induce the spin accumulation (Dm) in SC via Seebeck spin tunneling (SST). It was found that the SST effect, involving thermal transfer of spin angular momentum from FM to SC without a tunneling charge current, is a purely interface-related phenomenon of the tunnel contact and governed by the energy dependence of its tunnel spin polarization (TSP) 20 .…”

mentioning

confidence: 99%

“…Intriguingly, Le Breton et al 20 have reported a rather different mechanism for the spin accumulation, in which temperature difference across a ferromagnet (FM)/oxide/SC tunnel contact can induce the spin accumulation (Dm) in SC via Seebeck spin tunneling (SST). It was found that the SST effect, involving thermal transfer of spin angular momentum from FM to SC without a tunneling charge current, is a purely interface-related phenomenon of the tunnel contact and governed by the energy dependence of its tunnel spin polarization (TSP) 20 .…”

mentioning

confidence: 99%

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confidence: 99%

“…It was found that the SST effect, involving thermal transfer of spin angular momentum from FM to SC without a tunneling charge current, is a purely interface-related phenomenon of the tunnel contact and governed by the energy dependence of its tunnel spin polarization (TSP) 20 . This provides a conceptually new mechanism for the generation of Dm in SC as well as for the functional use of heat in spintronic devices 20 . The SST and thermal spin accumulation (Dm th ) in p-type SC (e.g., p-type Si) have been intensely studied, using a Ni 80 Fe 20 /Al 2 O 3 /SiO 2 /p-SC contact with the asymmetry in TSP of tunneling holes 20 .…”

mentioning

confidence: 99%

“…This provides a conceptually new mechanism for the generation of Dm in SC as well as for the functional use of heat in spintronic devices 20 . The SST and thermal spin accumulation (Dm th ) in p-type SC (e.g., p-type Si) have been intensely studied, using a Ni 80 Fe 20 /Al 2 O 3 /SiO 2 /p-SC contact with the asymmetry in TSP of tunneling holes 20 . However, the counterpart of n-type SC still needs to be explored 21 .…”

mentioning

confidence: 99%

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Thermal Spin Injection and Accumulation in CoFe/MgO/n-type Ge Contacts

Jeon¹,

Min²,

Park³

et al. 2013

Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials

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Understanding the interplay between spin and heat is a fundamental and intriguing subject. Here we report thermal spin injection and accumulation in CoFe/MgO/n-type Ge contacts with an asymmetry of tunnel spin polarization. Using local heating of electrodes by laser beam or electrical current, the thermally-induced spin accumulation is observed for both polarities of the temperature gradient across the tunnel contact. We observe that the magnitude of thermally injected spin signal scales linearly with the power of local heating of electrodes, and its sign is reversed as we invert the temperature gradient. A large Hanle magnetothermopower (HMTP) of about 7.0% and the Seebeck spin tunneling coefficient of larger than 0.74 meV K 21 are obtained at room temperature.T he tremendous power consumption and accompanying heat generation in current electronic devices requires alternative technologies to provide a solution for the energy issues and to realize the energy efficient electronics. Spintronics is a viable route for it, using the spin degree of freedom in addition to the conventional charge transport 1 . Recently another important ingredient, namely heat, appears on the stage. It has been reported that the temperature gradient and heat flow in ferromagnetic structures gives rise to a variety of spin related phenomena 2 . Understanding the interplay between heat and spin transport is a fundamental and intriguing subject but also offers unique possibilities for emerging electronics based on the combination of thermoelectrics and spintronics.Especially in SC-based spintronics, the functional use of heat provides a new route to inject and control of spin in semiconductors (SCs) 3 . The generation of non-equilibrium spin populations (i.e. spin accumulation) in nonmagnetic SC is a central issue of SC-based spintronics 1,3-5 . Significant progress has been made on the spin accumulation in various SC systems by means of circularly polarized light 4,6 , spin-polarized tunneling 7-13 , hotelectron spin filtering 14,15 , spin-orbit interaction 16,17 , or magnetization dynamics 18,19 .Intriguingly, Le Breton et al. 20 have reported a rather different mechanism for the spin accumulation, in which temperature difference across a ferromagnet (FM)/oxide/SC tunnel contact can induce the spin accumulation (Dm) in SC via Seebeck spin tunneling (SST). It was found that the SST effect, involving thermal transfer of spin angular momentum from FM to SC without a tunneling charge current, is a purely interface-related phenomenon of the tunnel contact and governed by the energy dependence of its tunnel spin polarization (TSP) 20 . This provides a conceptually new mechanism for the generation of Dm in SC as well as for the functional use of heat in spintronic devices 20 . The SST and thermal spin accumulation (Dm th ) in p-type SC (e.g., p-type Si) have been intensely studied, using a Ni 80 Fe 20 /Al 2 O 3 /SiO 2 /p-SC contact with the asymmetry in TSP of tunneling holes 20 . However, the counterpart of n-type SC still needs to be explored...

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mentioning

confidence: 99%

mentioning

confidence: 99%

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confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

See 3 more Smart Citations

Thermal Spin Injection and Accumulation in CoFe/MgO/n-type Ge Contacts

Jeon¹,

Min²,

Park³

et al. 2013

Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials

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show abstract

Silicon Spintronics for Next‐Generation Devices

Hamaya

2015

Spintronics for Next Generation Innovative Devices

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Utilization of the Antiferromagnetic IrMn Electrode in Spin Thermoelectric Devices and Their Beneficial Hybrid for Thermopiles

Kim

Lee

Surabhi

et al. 2016

Adv Funct Materials

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Seebeck coefficient S, high electrical conductivity σ, and low thermal conductivity κ, which are normally expressed by the thermoelectric figure of merit, ZT = σS 2 T/κ, where T is the absolute temperature. [1][2][3][4][5] To improve ZT, research on various materials has been performed, where κ is minimized by phonon engineering, [3] and the power factor (σS 2 ) is enhanced by modification of the band structure. [4] As an alternative and novel route to improve the thermoelectric efficiency, several interesting approaches, such as the spin Seebeck, anisotropic Seebeck, electrolyte Seebeck, and photo Seebeck effects, have been proposed recently. [6][7][8][9] Among these approaches, the spin Seebeck effect [9] has especially attracted attention with regard to thermoelectrics in various magnetic systems (or spin thermoelectrics) as a new strategy for thermoelectric energy conversion [10][11][12][13][14] and as a spin current source in spintronic devices. [15][16][17][18][19][20] Although the spin Seebeck effect is fascinating as the spin counterpart of the Seebeck effect, practical thermoelectric power generation using spin Seebeck effect is yet to be developed. Therefore, obviously, the most critical aspect of spin thermoelectrics for practical applications is to increase the efficiency of energy conversion, which has been engineered with regard to thermal conductivity, [21,22] band gap of the semiconductor, [16,23,24] and the spin Hall angle (θ SH ), [13] among others. In addition to these attempts, a spin thermopile consisting of wire elements of a ferromagnetic (FM)/electrode bilayer can increase the overall voltage by alternating the polarity of each element in a zigzag structure, [13,[25][26][27] as magnetic materials certainly can gain benefits from tunability of the magnetic direction and a nanoscale modulating structure. [28][29][30] Previously, spin thermopiles utilizing the anomalous Nernst effect (ANE) alone showed enhanced signals with alternating signs of ANE coefficients (C ANE ) or with an alternating magnetic direction. [27] However, its operating magnetic field is somewhat large, on the order of kOe, and the signal shows hysteretic behavior when subjected to coercive-field modulation to control the magnetic direction. It has also been reported that thermopiles with the inverse spin Hall effect (ISHE) can be fabricated The thermoelectric effect in various magnetic systems, in which electric voltage is generated by a spin current, has attracted much interest owing to its potential applications in energy harvesting, but its power generation capability has to be improved further for actual applications. In this study, the first instance of the formation of a spin thermopile via a simplified and straightforward method which utilizes two distinct characteristics of antiferromagnetic IrMn is reported: the inverse spin Hall effect and the exchange bias. The former allows the IrMn efficiently to convert the thermally induced spin current into a measurable voltage, and the latter can be used to control the ...

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Thermal spin current from a ferromagnet to silicon by Seebeck spin tunnelling

Cited by 224 publications

References 24 publications

Thermal Spin Injection and Accumulation in CoFe/MgO/n-type Ge Contacts

Thermal Spin Injection and Accumulation in CoFe/MgO/n-type Ge Contacts

Silicon Spintronics for Next‐Generation Devices

Utilization of the Antiferromagnetic IrMn Electrode in Spin Thermoelectric Devices and Their Beneficial Hybrid for Thermopiles

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