Thermal robustness evaluation of nonvolatile memory using Pt nanogaps

Naitoh, Yasuhisa; Suga, Hiroshi; Abe, Takuya; Otsu, Kazuki; Umeta, Yukiya; Sumiya, Touru; Shima, Hisashi; Tsukagoshi, Kazuhito; Akinaga, H.

doi:10.7567/apex.11.085202

Cited by 4 publications

(6 citation statements)

References 29 publications

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“…The widely recognized physical mechanism in RRAM devices can be divided into two categories, one is the oxide resistive random access memory (OxRRAM) and the other is the conductive-bridging random access memory (CBRAM) 23,24 . For the OxRRAM, the formation and rupture of the filaments is formed by oxygen vacancies within the RRAM device 25–27 . CBRAM is also referred to as electrochemical metallization (ECM) memory, relying on the formation/dissolution of metallic filaments inside the switching layer 28–31 .…”

Section: Introductionmentioning

confidence: 99%

Highly durable and flexible gallium-based oxide conductive-bridging random access memory

Gan

Liu

Chien

et al. 2019

Sci Rep

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The flexible conductive-bridging random access memory (CBRAM) device using a Cu/TiW/Ga2O3/Pt stack is fabricated on polyimide substrate with low thermal budget process. The CBRAM devices exhibit good memory-resistance characteristics, such as good memory window (>105), low operation voltage, high endurance (>1.4 × 102 cycles), and large retention memory window (>105). The temperature coefficient of resistance in the filament confirms that the conduction mechanism observed in the Ga2O3 layer is similar with the phenomenon of electrochemical metallization (ECM). Moreover, the performance of CBRAM device will not be impacted during the flexibility test. Considering the excellent performance of the CBRAM device fabricated by low-temperature process, it may provide a promising potential for the applications of flexible integrated electronic circuits.

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Section: Introductionmentioning

confidence: 99%

Highly durable and flexible gallium-based oxide conductive-bridging random access memory

Gan

Liu

Chien

et al. 2019

Sci Rep

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“…12,13) The extensive researches have been performed so as to conquer the bottleneck. As an important branch, the metals [14][15][16][17] or oxides [18][19][20] nanocrystals as storage media were considered to be an effective method for improving the memory performance. Furthermore, various high-k dielectrics, such as ZrO 2 , 21) HfO 2 , 22) and Y 2 O 3 23) have been employed instead of conventional Si 3 N 4 to acquire lower operating voltage and higher carrier capture efficiency.…”

mentioning

confidence: 99%

Improved memory characteristics for nonvolatile memory by using a double-potential well charge trapping layer

Tang

Geng

et al. 2019

Appl. Phys. Express

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A memory capacitor incorporating a designed ZrxSi1-xO2 trapping layer with a double-potential well bandgap is fabricated and investigated. Compared to single potential well and flat energy band, the double-potential well improves memory characteristics, and a faster program time of 9 × 10−6 s at +6 V flat band voltage shift, a lower charge loss of 3.6% at 200 °C up to 104 s, and a wider charge loss temperature insensitive range of 20 °C–134 °C can be obtained. The results indicate that the double-potential well bandgap is an appealing energy band structure for future nonvolatile memory applications.

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“…In recent years, nanogap memory (NGM) devices have garnered significant scientific attention owing to their notable properties, such as intrinsic high density, rapid switching speed, and wide operating temperature ranges. − Furthermore, NGM devices exhibit the capability of multilevel storage, demonstrated by a two-bit (4 resistive state) nonvolatile memory device utilizing Au nanogap devices through programmed voltage pulses . A 4K-bit memory array based on vertical nanogap structures has also been achieved through masked deposition and electromigration technology .…”

Section: Introductionmentioning

confidence: 99%

“…This suggests that NGM may be a potential candidate for the next generation of ultrahigh-speed nonvolatile memories. The reported shortest SET and RESET pulse widths for nanogap memory are 1 and 200 ns, respectively. , These devices can operate in a wide temperature range from room temperature to 773 K . Even at 873 K, this type of memory still exhibits a current on/off ratio of ∼10 4 with a retention time over 8 h .…”

Section: Introductionmentioning

confidence: 99%

Metal Nanogap Memory: Performances and Switching Mechanism

Tian,

Yao,

Ren

et al. 2024

ACS Appl. Mater. Interfaces

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The nanogap memory (NGM) device, emerging as a promising nonvolatile memory candidate, has attracted increasing attention for its simple structure, nano/atomic scale size, elevated operating speed, and robustness to high temperatures. In this study, nanogap memories based on Pd, Au, and Pt were fabricated by combining nanofabrication with electromigration technology. Subsequent evaluations of the electrical characteristics were conducted under ambient air or vacuum conditions at room temperature. The investigation unveiled persistent challenges associated with metal NGM devices, including (1) prolonged SET operation time in comparison to RESET, (2) the potential generation of error bits when enhancing switching speeds, and (3) susceptibility to degradation during program/erase cycles. While these issues have been encountered by predecessors in NGM device development, the underlying causes have remained elusive. Employing molecular dynamics (MD) simulation, we have, for the first time, unveiled the dynamic processes of NGM devices during both SET and RESET operations. The MD simulation highlights that the adjustment of the tunneling gap spacing in nanogap memory primarily occurs through atomic migration or field evaporation. This dynamic process enables the device to transition between the high-resistance state (HRS) and the low-resistance state (LRS). The identified mechanism provides insight into the origins of the aforementioned challenges. Furthermore, the study proposes an effective method to enhance the endurance of NGM devices based on the elucidated mechanism.

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Thermal robustness evaluation of nonvolatile memory using Pt nanogaps

Cited by 4 publications

References 29 publications

Highly durable and flexible gallium-based oxide conductive-bridging random access memory

Highly durable and flexible gallium-based oxide conductive-bridging random access memory

Improved memory characteristics for nonvolatile memory by using a double-potential well charge trapping layer

Metal Nanogap Memory: Performances and Switching Mechanism

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