Thermal resistance reduction in power MOSFETs integrated in a 65nm SOI technology

Comparisons of the Hot Carrier Effect in Quasi-Silicon-on-Insulator and Conventional Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated by Reversed Silicon Wafer Direct Bonding

“…The thin-film approach has therefore caught the attention of many researchers trying to develop high-performance thin-film SOI power devices. 4,5) Radio frequency (RF) power metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated using thin-film SOI substrate are also attractive because the SOI substrate enables the use of high-resistivity Si substrates, which are appropriate for fabricating high-quality passive RF devices. 6) One of the most important concerns related to power MOSFET's is how to improve the high-frequency performance.…”