Thermal Rectification in the Vicinity of a Structural Phase Transition

Kobayashi, Wataru; Sawaki, Daisuke; Omura, Tetsuya; Katsufuji, T.; Moritomo, Yutaka; Terasaki, Ichiro

doi:10.1143/apex.5.027302

Cited by 49 publications

(55 citation statements)

References 24 publications

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“…If these factors are all considered, the thermal rectifi cation factor will be even larger than that calculated here. However, even the above-predicted rectifi cation factor of 1.04 is eightfold larger than that achieved using bulk PCM, [ 29 ] 6.5 times larger than that from the carbon nanotube-based thermal diode, [ 25 ] and 3.7 times larger than the recently demonstrated VO 2 -based thermal diode. [ 28 ] In the next section, we use MD simulations to include the above-mentioned factors and mimic the realistic situations to validate the predicted thermal rectifi cation in PE-PEX junctions.…”

Section: Theoretical Thermal Rectifi Cationmentioning

confidence: 99%

Giant Thermal Rectification from Polyethylene Nanofiber Thermal Diodes

Zhang

Luo

2015

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The realization of phononic computing is held hostage by the lack of high-performance thermal devices. Here, it is shown through theoretical analysis and molecular dynamics simulations that unprecedented thermal rectification factors (as large as 1.20) can be achieved utilizing the phase-dependent thermal conductivity of polyethylene nanofibers. More importantly, such high thermal rectifications only need very small temperature differences (<20 °C) across the device, which is a significant advantage over other thermal diodes which need temperature biases on the order of the operating temperature. Taking this into consideration, it is shown that the dimensionless temperature-scaled rectification factors of the polymer nanofiber diodes range from 12 to 25-much larger than those of other thermal diodes (<8). The polymer nanofiber thermal diode consists of a crystalline portion whose thermal conductivity is highly phase-sensitive and a cross-linked portion which has a stable phase. Nanoscale size effect can be utilized to tune the phase transition temperature of the crystalline portion, enabling thermal diodes capable of operating at different temperatures. This work will be instrumental to the design of high performance, inexpensive, and easily processible thermal devices, based on which thermal circuits can be built to ultimately enable phononic computing.

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Section: Theoretical Thermal Rectifi Cationmentioning

confidence: 99%

Giant Thermal Rectification from Polyethylene Nanofiber Thermal Diodes

Zhang

Luo

2015

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“…The experimentally observed TRR (TRR exp ) values for the IQC/Si, IQC/Al 2 O 3 , IQC/CuGaTe 2 and IQC/Ag 2 Te composites were 1.81 ± 0.08, 2.03 ± 0.16, 2.20 ± 0.13 and 1.65 ± 0.20, respectively. These values are much larger than those of any other bulk thermal rectifiers previously reported [13–15, 28, 31, 37]. …”

Section: Heat Flux Measurement For Determining the Trrmentioning

confidence: 56%

“…After the first report of thermal rectification [2], several different mechanisms leading to the thermal rectification were reported: (a) a metal-insulator junction [2], (b) thermal wrapping [3–7], (c) thermal strain at the interface [8], (c) the thermal potential barrier [9], (d) inhomogeneous mass loading [10] and (e) composite of bulk materials possessing different temperature dependences of thermal conductivity [11–15]. Among these thermal rectifiers, (e) the composite of two bulk materials of different temperature dependences has attracted maximum attention because of its superior characteristics, which make it suitable for practical applications.…”

Section: Introductionmentioning

confidence: 99%

“…These theoretical predictions were subsequently validated by experiments [13–15]. Despite the experimental confirmation of bulk thermal rectification, several problems prevent their use in practical applications.…”

Section: Introductionmentioning

confidence: 99%

“…Thermal rectification in a bulk material was first observed at low temperatures below 150 K [13–15] because these composites made use of the significant temperature dependence of lattice thermal conductivity, typically observed in crystalline materials below 100 K. Unfortunately, increasing the temperature range over which this large variation in lattice thermal conductivity occurs is difficult, especially up to room temperature (300 K). Another problem is the small magnitude of the thermal rectification ratio (TRR = ) observed for the bulk thermal rectifiers; the largest value observed is less than 1.45 [13–15], which would not be suitable for applications. To make a practical bulk thermal rectifier, we need to greatly increase both the working temperature and the magnitude of the TRR.…”

Section: Introductionmentioning

confidence: 99%

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Very large thermal rectification in bulk composites consisting partly of icosahedral quasicrystals

Takeuchi

2014

Science and Technology of Advanced Materials

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The bulk thermal rectifiers usable at a high temperature above 300 K were developed by making full use of the unusual electron thermal conductivity of icosahedral quasicrystals. The unusual electron thermal conductivity was caused by a synergy effect of quasiperiodicity and by a narrow pseudogap at the Fermi level. The rectification ratio, defined by TRR = , reached vary large values exceeding 2.0. This significant thermal rectification would lead to new practical applications for the heat management.

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Solid‐State Thermal Control Devices

Swoboda

Klinar

Yalamarthy

et al. 2020

Adv Elect Materials

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Over the past decade, solid‐state thermal control devices have emerged as potential candidates for enhanced thermal management and storage. They distinguish themselves from traditional passive thermal management devices in that their thermal properties have sharp, nonlinear dependencies on direction and operating temperature, and can lead to more efficient circuits and energy conversion systems than what is possible today. They also distinguish themselves from traditional active thermal management devices (e.g., fans) in that they have no moving parts and are compact and reliable. In this article, the recent progress in the four broad categories of solid‐state thermal control devices that are under active research is reviewed: diodes, switches, regulators, and transistors. For each class of device, the operation principle, material choices, as well as metrics to compare and contrast performance are discussed. New architectures that are explored theoretically, but not experimentally demonstrated, are also discussed.

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Thermal Rectification in the Vicinity of a Structural Phase Transition

Cited by 49 publications

References 24 publications

Giant Thermal Rectification from Polyethylene Nanofiber Thermal Diodes

Giant Thermal Rectification from Polyethylene Nanofiber Thermal Diodes

Very large thermal rectification in bulk composites consisting partly of icosahedral quasicrystals

Solid‐State Thermal Control Devices

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