In this paper, we study the thermal rectification in asymmetric U-shaped graphene flakes by using nonequilibrium molecular dynamics simulations. The graphene flakes are composed by a beam and two arms. It is found that the heat flux runs preferentially from the wide arm to the narrow arm which indicates a strong rectification effect. The dependence of the rectification ratio upon the heat flux, the length and the width of the beam, the length and width of the two arms are studied. The result suggests a possible route to manage heat dissipation in U-shaped graphene based nanoelectronic devices. PACS numbers: 44.10.+i, 65.80.Ck, 62.23.Kn Graphene, a single layer of carbon atoms arranged in a honeycomb lattice, has attracted much interest due to its extraordinary properties [1,2]. Since graphene exhibits much greater electron mobility than silicon as a zero band gap semiconductor, it has been considered as a promising candidate for the post-CMOS (complementary metal-oxide-semiconductor) material to replace silicon which is approaching its fundamental limit [3]. As electronic devices would undergo dramatic miniaturization, thus heat dissipation has become one of the most important barriers of breaking through. To achieve better functionality and longer lifetime for nanoelectronic devices, it is desirable to have in-depth understanding of the thermal properties of graphene which stimulates intense efforts both experimentally [4][5][6] and theoretically [7,8]. To design a nanoelectronic device with better heat dissipation capacity, one of the most challenging issues is to design thermal rectifiers. Thermal rectification is a phenomenon that the heat flux runs preferentially in one direction and inferiorly in the opposite direction [9,10]. Thus realization thermal rectification in graphene has deep implication for graphene based devices. Through molecular dynamics simulations, researchers have proposed several different thermal rectifiers from the asymmetric graphene nanoribbons [11][12][13][14]. In nanoelectronic designs, U-shaped devices are very common and widely used as electronic transistors and logic gates. Very recently it is found that the U-shaped graphene flakes reveal extremely high Ion/Ioff ratio as channel transistors in experiments and they can easily realize and control the resonant tunneling without any external gates [15,16]. The U-shaped graphene flakes can be fabricated by using lithography or gallium focused ion beam to cut from continuous graphene sheets [15,16]. Therefore it arouses great interest to design thermal rectifiers by U-shaped graphene flakes.Here we study the thermal rectification in asymmetric Ushaped graphene flakes by NEMD (nonequilibrium molecular dynamics) simulations. The graphene flakes are composed by a beam and two arms. We report that higher thermal conductivity is obtained when the heat flux runs from the wide arm to the narrow arm. We also discuss the impacts of the heat flux, the length and the width of the beam, the length and width of the two arms on the rectification...