Thermal radiative properties of (La1−xSrx)MnO3−δ thin films fabricated on yttria-stabilized zirconia single-crystal substrate by pulsed laser deposition

Shiota, Tadashi; Sato, K.; Cross, Jeffrey S.; Wakiya, Naoki; Tachikawa, Sumitaka; Ohnishi, Akira; Sakurai, Osamu; Shinozaki, Kazuo

doi:10.1016/j.tsf.2015.09.027

Cited by 8 publications

(5 citation statements)

References 24 publications

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“…With the increase of thickness, the emittance tends to be higher. This tendency is identical to the first type, but just the reverse with the conclusion reported by Shiota et al [17], whose thickness is set as 1.2 μm to 4.3 μm. We guess this discrepancy derived from the different thickness magnitude and measurement error.…”

Section: Resultssupporting

confidence: 79%

“…When the thickness increases to 456 nm, we get a dense and uniform thermochromic film with emittance increment Δ =0.34. Compared with the previous reports by [17,28,29], which says that the deposition thickness should reach 1.5 μm at least to realize Δ =0.35. However, we suggest that the (La,Ca,K)MnO 3±δ film can accomplish comparable property with a low thickness less than 500 nm.…”

Section: Resultsmentioning

confidence: 55%

“…The result shows that the emittance increment at 173-373 K can approach 0.30 in properly condition. T. Shiota et al [17] fabricated (La 1−x Sr x )MnO 3 thin films on YSZ(100) substrate by pulsed laser deposition. The result found that 2.5 μm-thick film is the most proximate substitution for the ceramic tiles used in spacecraft.…”

Section: Introductionmentioning

confidence: 99%

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Nanometer thick thermochromic film based on K-doped manganite oxide prepared by magnetron sputtering

Lü

Fan

et al. 2017

Journal of Alloys and Compounds

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For seeking a lightweight thermochromic film acting as a smart radiation device in thermal control system for spacecraft, the (La,Ca,K)MnO 3±δ films with different thicknesses were deposited on Si(100) substrate by magnetron sputtering method with a target which was synthesized by a sol-gel method. The crystal structure and micro-morphology of these films are investigated. The results reveal that all films form an orthorhombic perovskite structure, and it undergoes a Volmer-Weber growth mode with the increased thickness. Temperature-dependent infrared reflectivity and emittance are investigated. Spectra data indicate that reflectivity of all films has a decreased trend with increasing temperature. In the temperature range of 173-373 K, the K-doped thermochromic films show a large emittance increment near 0.36 with film

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Section: Resultssupporting

confidence: 79%

Section: Resultsmentioning

confidence: 55%

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Nanometer thick thermochromic film based on K-doped manganite oxide prepared by magnetron sputtering

Lü

Fan

et al. 2017

Journal of Alloys and Compounds

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“…[ 72 ] Indeed, fast solid‐state ionic conductors such as yttria‐stabilized zirconia (YSZ) can be grown epitaxially on top of (or under) LSMO. [ 73 ] Cyclability and device‐to‐device variations are also important aspects of synaptic elements. Different devices exhibit the same qualitative behavior, although their resistance values can change due to thickness variations between different deposited samples.…”

Section: Resultsmentioning

confidence: 99%

Electrolyte Gated Synaptic Transistor based on an Ultra‐Thin Film of La_0.7Sr_0.3MnO₃

López

Tornos

Peralta

et al. 2023

Adv Elect Materials

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Developing electronic devices capable of reproducing synaptic functionality is essential in the context of implementing fast, low‐energy consumption neuromorphic computing systems. Hybrid ionic/electronic three‐terminal synaptic transistors are promising as efficient artificial synapses since they can process information and learn simultaneously. In this work, an electrolyte‐gated synaptic transistor is reported based on an ultra‐thin epitaxial La0.7Sr0.3MnO3 (LSMO) film, a half‐metallic system close to a metal‐insulator transition. The dynamic control of oxygen composition of the manganite ultra‐thin film with voltage pulses applied through the gate terminal allows reversible modulation of its electronic properties in a non‐volatile manner. The conductance modulation can be finely tuned with the amplitude, duration, and number of gating pulses, providing different alternatives to gradually update the synaptic weights. The transistor implements essential synaptic features such as excitatory postsynaptic potential, paired‐pulse facilitation, long‐term potentiation/depression of synaptic weights, and spike‐time‐dependent plasticity. These results constitute an important step toward the development of neuromorphic computing devices leveraging the tunable electronic properties of correlated oxides, and pave the way toward enhancing future device functionalities by exploiting the magnetic (spin) degree of freedom of the half metallic transistor channel.

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“…ferroelectric tunnel junctions and all-oxide magneto-electric tunnel junction with LSMO films used as ferromagnetic electrodes [1][2][3][4]. And LSMO is one of the most promising candidates for variable thermal emittance materials [5]. Recently many reports focus on the interface structural and magnetic properties of LSMO films deposited on SrTiO 3 (STO) substrates [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Effect of Annealing on Valence Electronic States Related to Mn Ions of La0.67Sr0.33MnO3 Films

Pan

Fang

et al. 2017

MSF

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La0.67Sr0.33MnO3 (LSMO) films were prepared on SrTiO3 single-crystal substrates by the pulsed laser deposition method. X-ray photoelectron spectra (XPS) were measured for the LSMO films as-prepared and annealed in vacuum, respectively. Multiple peak fitting for Mn 2p3/2 XPS spectra shows that Mn3+ and Mn4+ proportionally decrease on the surface of the LSMO film annealed in vacuum compared with the as-prepared film. And the saturation magnetization (Ms) slightly decreases. Analysis indicates that a small amount of Mn2+, as surface defects of LSMO films, hardly changed after vacuum annealing. The total of Mn3+, Mn4+ and the low-binding energy peak (LEP) remains unchanged before and after annealing in vacuum, which suggests that LEP should be related with Mn3+ and Mn4+ when the magnetic properties are considered.

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Thermal radiative properties of (La1−xSrx)MnO3−δ thin films fabricated on yttria-stabilized zirconia single-crystal substrate by pulsed laser deposition

Cited by 8 publications

References 24 publications

Nanometer thick thermochromic film based on K-doped manganite oxide prepared by magnetron sputtering

Nanometer thick thermochromic film based on K-doped manganite oxide prepared by magnetron sputtering

Electrolyte Gated Synaptic Transistor based on an Ultra‐Thin Film of La_0.7Sr_0.3MnO₃

Effect of Annealing on Valence Electronic States Related to Mn Ions of La<sub>0.67</sub>Sr<sub>0.33</sub>MnO<sub>3</sub> Films

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Thermal radiative properties of (La1−xSrx)MnO3−δ thin films fabricated on yttria-stabilized zirconia single-crystal substrate by pulsed laser deposition

Cited by 8 publications

References 24 publications

Nanometer thick thermochromic film based on K-doped manganite oxide prepared by magnetron sputtering

Nanometer thick thermochromic film based on K-doped manganite oxide prepared by magnetron sputtering

Electrolyte Gated Synaptic Transistor based on an Ultra‐Thin Film of La0.7Sr0.3MnO3

Effect of Annealing on Valence Electronic States Related to Mn Ions of La<sub>0.67</sub>Sr<sub>0.33</sub>MnO<sub>3</sub> Films

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Product

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Electrolyte Gated Synaptic Transistor based on an Ultra‐Thin Film of La_0.7Sr_0.3MnO₃