“…Many well-performed MIR NLO materials have emerged from the AM II M IV Q 4 (A = Ba, Sr; M II = Zn, Cd, Hg; M IV = Si, Ge, Sn; Q = S, Se) series of compounds, including SrZnGeS 4 , SrCdSiS 4 , SrZnSnS 4 , BaZnSnQ 4 (Q = S, Se), AHgSnQ 4 (A = Sr, Ba; Q = S, Se), and so on. − Our previous work has successfully synthesized the compound SrZnSnSe 4 in this system, which has a large second-harmonic-generation (SHG) effect (5 × AGS). However, the compound shows a relatively narrow band gap (1.82 eV), which may lead to the low LDT effect.…”